• 제목/요약/키워드: V-t

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Temperature Dependence of the Vibration-Vibration Energy Transfer for HF(v = n) + $H_2$(v = 0) and DF(v = n) + $D_2$(v = 0)

  • Lee, Chang-Soon;Kim, Yoo-Hang
    • Bulletin of the Korean Chemical Society
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    • 제13권1호
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    • pp.11-17
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    • 1992
  • Vibration-to-vibration energy transfer probabilities for $HF(v=n)+H_2(v=0){\to}HF(v=n-1)+H_2(v=1)$ and $DF(v=n)+D_2(v=0){\to}DF(v=n-1)+D_2(v=1)$ including both the vibration-to-vibration and translation (V-V, T) and vibration-to-vibration and rotation (V-V, R) energy transfer paths have been calculated semiclassically using a simplified collision model and Morse-type intermolecular interaction potential. The calculated results are in reasonably good agreement with those obtained by experimental studies. They also show that the transition processes for $HF(v=1-3)+H_2(v=0){\to}HF(v=0-2)+H_2(v=1)$ and $DF(v=1,\;4)+D_2(v=0){\to}DF(v=0,\;3)+D_2(v=1)$ are strongly dependent on the V-V, T path at low temperature but occur predominantly via the V-V, R path with rising temperature. The vibration-to-vibration energy transfer for $HF(v=4)+H_2(v=0){\to}HF(v=3)+H_2(v=1)$ and $DF(v=2-3)+D_2(v=0){\to}DF(v=1-2)+D_2(v=1)$ occur predominantly via V-V, R path and V-V, T path through whole temperatures, respectively.

식생습지와 개방수역의 배열에 따른 인공습지의 수처리 특성 (Water Treatment Characteristics by Const ucted Wetland with Different Vegetation - Open Water Arrangements)

  • 장정렬;최선화;권순국
    • 한국물환경학회지
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    • 제23권1호
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    • pp.122-130
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    • 2007
  • This study was conducted to evaluate water treatment characteristics according to vegetated wetland(V) and open water(O) arrangements in free water surface constructed wetland. Three pilot-scale wetlands, V-V, O-V and V-O, were built and operated. $BOD_5$ was a slightly reduced at all the arrangements because the influent concentration was so low as background concentration of constructed wetlands. While T-N and T-P removal efficiency showed higher than 50% for all cases. The O-V arrangement showed the highest removal efficiency: 20% for $BOD_5$, 56% for SS, 59% for T-N and 72% for T-P. Effluent concentration of the O-V were significantly low compared with those from the V-O. O-V arrangement would be beneficial in the light of pollutant removal efficiency as well as construction cost.

CONDITIONAL FOURIER-FEYNMAN TRANSFORMS AND CONVOLUTIONS OF UNBOUNDED FUNCTIONS ON A GENERALIZED WIENER SPACE

  • Cho, Dong Hyun
    • 대한수학회지
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    • 제50권5호
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    • pp.1105-1127
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    • 2013
  • Let C[0, $t$] denote the function space of real-valued continuous paths on [0, $t$]. Define $X_n\;:\;C[0,t]{\rightarrow}\mathbb{R}^{n+1}$ and $X_{n+1}\;:\;C[0,t]{\rightarrow}\mathbb{R}^{n+2}$ by $X_n(x)=(x(t_0),x(t_1),{\ldots},x(t_n))$ and $X_{n+1}(x)=(x(t_0),x(t_1),{\ldots},x(t_n),x(t_{n+1}))$, respectively, where $0=t_0 <; t_1 <{\ldots} < t_n < t_{n+1}=t$. In the present paper, using simple formulas for the conditional expectations with the conditioning functions $X_n$ and $X_{n+1}$, we evaluate the $L_p(1{\leq}p{\leq}{\infty})$-analytic conditional Fourier-Feynman transforms and the conditional convolution products of the functions, which have the form $fr((v_1,x),{\ldots},(v_r,x)){\int}_{L_2}_{[0,t]}\exp\{i(v,x)\}d{\sigma}(v)$ for $x{\in}C[0,t]$, where $\{v_1,{\ldots},v_r\}$ is an orthonormal subset of $L_2[0,t]$, $f_r{\in}L_p(\mathbb{R}^r)$, and ${\sigma}$ is the complex Borel measure of bounded variation on $L_2[0,t]$. We then investigate the inverse conditional Fourier-Feynman transforms of the function and prove that the analytic conditional Fourier-Feynman transforms of the conditional convolution products for the functions can be expressed by the products of the analytic conditional Fourier-Feynman transform of each function.

T Cell Immune Responses against SARS-CoV-2 in the With Corona Era

  • Ji-Eun Oh
    • 대한의생명과학회지
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    • 제28권4호
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    • pp.211-222
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    • 2022
  • After more than two years of efforts to end the corona pandemic, a gradual recovery is starting in countries with high vaccination rates. Easing public health policies for a full-fledged post-corona era, such as lifting the mandatory use of outdoor mask and quarantine measures in entry have been considered in Korea. However, the continuous emergence of new variants of SARS-CoV-2 and limitations in vaccine efficacy still remain challenging. Fortunately, T cells and memory T cells, which are key components of adaptive immunity appear to contribute substantially in COVID-19 control. SARS-CoV-2 specific CD4+/CD8+ T cells are induced by natural infection or vaccination, and rapid induction and activation of T cells is mainly associated with viral clearance and attenuated clinical severity. In addition, T cell responses induced by recognition of a wide range of epitopes were minimally affected and conserved against the highly infectious subsets of omicron variants. Polyfunctional SARS-CoV-2 specific T cell memory including stem cell-like memory T cells were also developed in COVID-19 convalescent patients, suggesting long lasting protective T cell immunity. Thus, a robust T-cell immune response appears to serve as a reliable and long-term component of host protection in the context of reduced efficacy of humoral immunity and persistent mutations and/or immune escape.

CENTRAL LIMIT TYPE THEOREM FOR WEIGHTED PARTICLE SYSTEMS

  • Cho, Nhan-Sook;Kwon, Young-Mee
    • 대한수학회지
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    • 제41권5호
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    • pp.773-793
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    • 2004
  • We consider a system of particles with locations { $X_{i}$ $^{n}$ (t):t$\geq$0,i=1,…,n} in $R^{d}$ , time-varying weights { $A_{i}$ $^{n}$ (t) : t $\geq$0,i = 1,…,n} and weighted empirical measure processes $V^{n}$ (t)=1/n$\Sigma$$_{i=1}$$^{n}$ $A_{i}$ $^{n}$ (t)$\delta$ $X_{i}$ $^{n}$ (t), where $\delta$$_{x}$ is the Dirac measure. It is known that there exists the limit of { $V_{n}$ } in the week* topology on M( $R^{d}$ ) under suitable conditions. If { $X_{i}$ $^{n}$ , $A_{i}$ $^{n}$ , $V^{n}$ } satisfies some diffusion equations, applying Ito formula, we prove a central limit type theorem for the empirical process { $V^{n}$ }, i.e., we consider the convergence of the processes η$_{t}$ $^{n}$ ≡ n( $V^{n}$ -V). Besides, we study a characterization of its limit.t.

주파수 출력을 갖는 MAGFET Hybrid IC (MAGFET Hybrid IC with Frequency Output)

  • 김시헌;이철우;남태철
    • 센서학회지
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    • 제6권3호
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    • pp.194-199
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    • 1997
  • 자기센서가 전압이나 전류의 형태 그대로 출력되는 경우에 발생되는 잡음 유입 및 전압 손실 문제를 개선하기 위하여 소자부는 CMOS공정을 이용하여, 포화영역에서 동작하는 2 drain의 MAGFET을 설계 제작하고, 연산증폭기를 이용한 I-V변환회로, VCO(Voltage Controlled Oscillator)를 만들고 Schmitt trigger에 의한 주파수(Pulse) 변환회로의 시스템부를 하이브릿드 IC로 구성하여 packaging했다. 이 때 자기센서 절대감도는 1.9 V/T, 적감도는 $3.2{\times}10^{4}\;V/A{\cdot}T$ 이었으며 190 kHz/T의 안정된 출력 주파수 특성을 얻을 수 있었다.

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Application of T1 Map Information Based on Synthetic MRI for Dynamic Contrast-Enhanced Imaging: A Comparison Study with the Fixed Baseline T1 Value Method

  • Dong Jae Shin;Seung Hong Choi;Roh-Eul Yoo;Koung Mi Kang;Tae Jin Yun;Ji-Hoon Kim;Chul-Ho Sohn;Sang Won Jo;Eun Jung Lee
    • Korean Journal of Radiology
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    • 제22권8호
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    • pp.1352-1368
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    • 2021
  • Objective: For an accurate dynamic contrast-enhanced (DCE) MRI analysis, exact baseline T1 mapping is critical. The purpose of this study was to compare the pharmacokinetic parameters of DCE MRI using synthetic MRI with those using fixed baseline T1 values. Materials and Methods: This retrospective study included 102 patients who underwent both DCE and synthetic brain MRI. Two methods were set for the baseline T1: one using the fixed value and the other using the T1 map from synthetic MRI. The volume transfer constant (Ktrans), volume of the vascular plasma space (vp), and the volume of the extravascular extracellular space (ve) were compared between the two methods. The interclass correlation coefficients and the Bland-Altman method were used to assess the reliability. Results: In normal-appearing frontal white matter (WM), the mean values of Ktrans, ve, and vp were significantly higher in the fixed value method than in the T1 map method. In the normal-appearing occipital WM, the mean values of ve and vp were significantly higher in the fixed value method. In the putamen and head of the caudate nucleus, the mean values of Ktrans, ve, and vp were significantly lower in the fixed value method. In addition, the T1 map method showed comparable interobserver agreements with the fixed baseline T1 value method. Conclusion: The T1 map method using synthetic MRI may be useful for reflecting individual differences and reliable measurements in clinical applications of DCE MRI.

Temperature Dependence of Excitonic Transitions in GaN Grown by MOCVD

  • Guangde Chen;Jingyu Lin;Hongxing Jiang;Kim, Jung-Hwan;Park, Sung-Eul
    • Journal of Photoscience
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    • 제7권1호
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    • pp.27-30
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    • 2000
  • The Photoluminescence (PL) measurement results of a very good quality GaN sample grown by metalorganic chemical vapor deposition (MOCVD) are reported. The temperature dependences of peak position, emission intensity, and the full width at half maximum (FWHM) of free-exciton (FX) A and B are presented. Our results show the fast thermal quenching of FX transition intensities and predominantly acoustic phonon scattering of emission line broadening. The transition-energy-shift following the Varshni's empirical equation, and by using it to fit the data, E$\_$A1/(T) = 3.4861 eV -6.046 $\times$ 10$\^$-4/T$^2$ (620.3+ T) eV, E$\_$B1/(T) = 3.4928 eV -4.777 $\times$ 10$\^$-4/T$^2$ / (408.2+ T) eV and E$\_$A2/ = 3.4991 eV -4.426 $\times$ 10$\^$-4/ T$^2$ / (430.6+ T) eV for A(n=1), B(n=1), and A(n=2) are obtained respectively.

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0.3 um급 Inverse-T Gate 모스와 LDD 모스의 전류구동력 및 신뢰성 특성비교 (Characterization of Current Drivability and Reliability of 0.3 um Inverse T-Gate MOS Compared with Those of Conventional LDD MOS)

  • 윤창주;김천수;이진호;김대용;이진효
    • 전자공학회논문지A
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    • 제30A권8호
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    • pp.72-80
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    • 1993
  • We fabricated 0.3um gate length inverse-T gate MOS(ITMOS) and conventional lightly doped drain oxide spacer MOS(LDDMOS), and studied electrical characteristics for comparison. Threshold voltage of 0.3um gate length device was 0.58 V for ITMOS and 0.6V for LDDMOS. Measured subthreshold characteristics showed a slope of 85mV/decades for both ITLDD and LDDMOS. Maximum transconductance at V S1ds T=V S1gs T=3.3V was 180mS/mm for ITMOS and 163mS/mm for LDDMOS respectively. GIDL current was observed to be 0.1pA/um for ITOMS and 0.8pA/um for LDDMOS. Substrate current of ITMOS as a function of drain current was found to be reduced by a foactor of 2.5 compared with that of LDDMOS.

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