• Journal of applied mathematics & informatics
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• v.25 no.1_2
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• pp.383-388
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• 2007

A (g, f)-factor F of a graph G is Called a Hamiltonian (g, f)-factor if F contains a Hamiltonian cycle. The binding number of G is defined by $bind(G)\;=\;{min}\;\{\;{\frac{{\mid}N_GX{\mid}}{{\mid}X{\mid}}}\;{\mid}\;{\emptyset}\;{\neq}\;X\;{\subset}\;V(G)},\;{N_G(X)\;{\neq}\;V(G)}\;\}$. Let G be a connected graph, and let a and b be integers such that $4\;{\leq}\;a\;<\;b$. Let g, f be positive integer-valued functions defined on V(G) such that $a\;{\leq}\;g(x)\;<\;f(x)\;{\leq}\;b$ for every $x\;{\in}\;V(G)$. In this paper, it is proved that if $bind(G)\;{\geq}\;{\frac{(a+b-5)(n-1)}{(a-2)n-3(a+b-5)},}\;{\nu}(G)\;{\geq}\;{\frac{(a+b-5)^2}{a-2}}$ and for any nonempty independent subset X of V(G), ${\mid}\;N_{G}(X)\;{\mid}\;{\geq}\;{\frac{(b-3)n+(2a+2b-9){\mid}X{\mid}}{a+b-5}}$, then G has a Hamiltonian (g, f)-factor.

• Journal of radiological science and technology
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• v.31 no.1
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• pp.89-95
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• 2008

The quality correction factor for used beam and qualities is strongly required for clinical dosimetry by TRS-398 protocol of IAEA. In this study the quality correction factors for a commercial plane-parallel ionization chamber in high energy electron beams were calculated by Monte Carlo code(DOSRZnrc/EGSnrc). In comparison of quality correction factor, the difference between this study and TRS-398 were within 1% in 5-20 MeV. In case of 4MeV the difference was 1.9%. As an independent method of determination of quality correction factor this study can be applied to evaluate values in the protocol or calculate the factor for a new chamber.

• Journal of the Korean Mathematical Society
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• v.59 no.4
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• pp.757-774
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• 2022

Let a and b be positive even integers. An even [a, b]-factor of a graph G is a spanning subgraph H such that for every vertex v ∈ V (G), d_H(v) is even and a ≤ dH(v) ≤ b. Let κ(G) be the minimum size of a vertex set S such that G - S is disconnected or one vertex, and let σ₂(G) = min_uv∉E(G) (d(u)+d(v)). In 2005, Matsuda proved an Ore-type condition for an n-vertex graph satisfying certain properties to guarantee the existence of an even [2, b]-factor. In this paper, we prove that for an even positive integer b with b ≥ 6, if G is an n-vertex graph such that n ≥ b + 5, κ(G) ≥ 4, and σ₂(G) ≥ ${\frac{8n}{b+4}}$, then G contains an even [4, b]-factor; each condition on n, κ(G), and σ₂(G) is sharp.

• Journal of applied mathematics & informatics
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• v.27 no.5_6
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• pp.1157-1163
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• 2009

Let G be a graph with vertex set V(G) and let f be a nonnegative integer-valued function defined on V(G). A spanning subgraph F of G is called a fractional f-factor if $d^h_G$(x)=f(x) for all x $\in$ for all x $\in$ V (G), where $d^h_G$ (x) = ${\Sigma}_{e{\in}E_x}$ h(e) is the fractional degree of x $\in$ V(F) with $E_x$ = {e : e = xy $\in$ E|G|}. In this paper it is proved that if ${\delta}(G){\geq}{\frac{b^2(k-1)}{a}},\;n>\frac{(a+b)(k(a+b)-2)}{a}$ and $|N_G(x_1){\cup}N_G(x_2){\cup}{\cdots}{\cup}N_G(x_k)|{\geq}\frac{bn}{a+b}$ for any independent subset ${x_1,x_2,...,x_k}$ of V(G), then G has a fractional f-factor. Where k $\geq$ 2 be a positive integer not larger than the independence number of G, a and b are integers such that 1 $\leq$ a $\leq$ f(x) $\leq$ b for every x $\in$ V(G). Furthermore, we show that the result is best possible in some sense.

• Animal cells and systems
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• v.7 no.3
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• pp.255-259
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• 2003

Mutations in the factor Ⅴ gene are major risk markers for venous thrombosis. Several factors for blood coagulation have been related with cardiovascular disease. Ⅰ investigated genotype distribution for three mutations (G1691 A, A2379G and G2391 A) of the factor Ⅴ gene in the Korean population. Genotype frequencies were examined by polymerase chain reaction in 135 patients with coronary artery disease (CAD) and 116 healthy subjects. For the G1691A mutation (factor Ⅴ

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.145-149
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• 2000

A single-stage power factor correction AC/DC converter with a simple link voltage suppressing circuit (LVSC) for the universal line application is proposed. Using this simple circuit a low link voltage can be realized without deadbands at line zero-crossings. The proposed converter is analyzed and a prototype converter with 5C, 12V output is implemented to verify the performance. The experimental results show that the link voltage stress and efficiency are about 447V and 81%, respectively.

• Kyungpook Mathematical Journal
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• v.46 no.4
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• pp.581-589
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• 2006

We characterize the linear operators which preserve the factor rank of integer matrices. That is, if $\mathcal{M}$ is the set of all $m{\times}n$ matrices with entries in the integers and min($m,n$) > 1, then a linear operator T on $\mathcal{M}$ preserves the factor rank of all matrices in $\mathcal{M}$ if and only if T has the form either T(X) = UXV for all $X{\in}\mathcal{M}$, or $m=n$ and T(X)=$UX^tV$ for all $X{\in}\mathcal{M}$, where U and V are suitable nonsingular integer matrices. Other characterizations of factor rank-preservers of integer matrices are also given.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

• Journal of Energy Engineering
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• v.26 no.4
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• pp.29-34
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• 2017

Factors of Zero-Energy Building are divided into active and passive factor. Passive factor means insulation, heat bridge of building like insulation, windows and doors, awning, outside etc. and active factor means energy output and efficiency coefficient. Energy output of active factor is achieved by new generating energy. This study anticipated how many effects will be produced when not new generating energy but Vehicle to Building; V2B, bi-directional charging and discharging technology, is applied to Zero-Energy Building. In new generating energy, power generation will be anticipated by geography and climate, but in V2B, several input variable like user's discharging intention and number of usable charger etc. should be considered. We can check how much V2B contribute to the Zero-Energy Building by anticipated results, and that results should be anticipated by using probabilitic method because there is few statistical data. This study anticipate change of charging and discharging pattern, based by Demand Response slot, by using monte carlo method among the probabilitic methods.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.120-124
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• 2006

In this study, psychological assessment was carried out to investigate the driver's psychological characteristics by the change of the headlight. The participants were 20 men and 20 women in their 20s and thirty-two different conditions in combinations of waveform of light, voltage, and alteration time were used. The questionnaire for the assessment was evaluated by 8 subjective items and 5-point SD criteria of 19 pair's adjective. The results were as follows. 1. The assessment results from SD method indicated 3 factors by factor analysis, and it was shown that A waveform had significances in a sense of security and impetus and B waveform had a significance in a sense of security The levels of the limitations for the voltage change were 12V in the factor of a sense of security and 11V in the factor of a sense of impetus for A waveform, 12.6V in the factor of a sense of security for B waveform. 2. The results of the subjective assessment showed that the limitation of A waveform's brightness change was 12V. Moreover, the limitations of voltage changes were 12.6V for B waveform brightness change, 12V for discomfort, 12.6V for darkness. And the limitation of C waveform's brightness change was 12V.