• 전기학회논문지
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• 제61권1호
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• pp.89-93
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• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• 한국표면공학회지
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• 제40권2호
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• 대한기계학회논문집A
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• 제26권7호
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• pp.1262-1269
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• 2002

It is inevitable to evaluate the life of turbine rotor because the operating periods of power plants need to be extended. For the test, seven kinds of specimens with different degradation levels were prepared by the isothermal heat treatment at $630^{\circ}C$. Magnetic methods utilizing Barkhausen noise coercive force($BN_c$) were applied to detect the degradation caused by thermal aging. Magnetic property of material is related with domain dynamics and that is affected by the microstructure of material. Therefore $BN_c$ is very sensitive to the microstructure change of the material. With the increase of degradation, $BN_c$ was decreased and this phenomenon is considered due to precipitations and grain size. The result was compared with Vickers hardness($H_v$) and coercive force($H_c$) to detect the relative variation, and was related with $H_v$ and YS to estimate the change of the mechanical properties with the degradation.

• Journal of Electrical Engineering and Technology
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• 제5권4호
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• pp.637-639
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• 2010

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

• 한국세라믹학회지
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• 제49권6호
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• pp.620-624
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• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• 한국표면공학회지
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• 제32권3호
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• pp.351-355
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• 1999

BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

• 한국통신학회논문지
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• 제23권4호
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• pp.988-996
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• 1998

BN 세라믹에 소결조제로 0.07wt% $V_{2}O_{5}$ 와 0.03wt% CuO을 첨가 하였을 때(BNC3V7) Ag 전극과 동시 소성이 가능한 $900^{\circ}C$ 소결할 수 있었다. 이때 BNC3V7 시편은 유전상수 44.3 $Qxf_{o}$값 22,000 GHz, TCF 값 ppm$/^{\circ}C$의 유전특성을 얻을 수있었다. PCS대역에서 사용 가능한 적층칩 대역 필터를 기존의 방법과 태핑기법에 의한 2가지 방법으로 설계하였다. 입출력 태핑 기법을 이용하여 필터를 제조할 경우 입출력 커플링을 이용한 기존방법에 비해 layer를 감소시킬 수 있어 구조가 간단해진다는 장점이 있다. 적층칩 대역 필터는 Tape casting한 후 Ag전극을 이용하여 Screen printing하여 제작 하였다. 제작된 필터는 $900^{\circ}C$에서 소결하여 설계된 필터와 특성 값을 비교 하였다. 태핑된 칩 필터와 기존 칩 필터 모두 중심주파수는 90MHz 낮은 주파수 대역으로 이동 하였지만 대역 통과 특성은 설계 값과 유사 하였다. 태핑된 칩 필터의 스퓨리어스 특성은 기존 칩 필터에 비해 향상되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.