• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• Journal of The Geomorphological Association of Korea
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• v.21 no.4
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• pp.1-17
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• 2014

This study analyzed characteristics of landform relieves on 12 bedrock whole(W) areas and 24 mountain(M) and valley(V) areas. Based on this result, characteristics and relations between bedrocks and landform relief were classified as follows. 1) gneiss-height M and granite-height W, M, V areas show active stream incision for uplift. However these areas have relatively low relief and grade compared to high altitude, because effect of denudation don't pass on whole slope. 2) gneiss-height W, V, gneiss-mid M, schist M, granite-mid M, volcanic rock W, M, sedimentary rock-height(conglomerate) W, M, V, sedimentary rock-mid (sandstone and shale) M, limestone W, M areas have active stream erosion and mass movement, but landform relieves are on the high side, because these have resistant bedrock and geological structure against weathering and erosion. 3) gneiss-mid W, V, schist W, V, granite-mid W, V, volcanic rock V, sedimentary rock-mid W, V, sedimentary rock-low(shale) M, limestone V areas landform relieves are on the low side, because these have weak resistance and active weathering, mass movement, erosion, transportation and deposit. 4) gneiss-low W, M, V, granite-low W, M, V, sedimentary rock-low W, V areas landform relieves are very low, because these don't have active erosion and mass movement as costal area with low altitude.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

• Journal of IKEEE
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• v.24 no.1
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• pp.161-169
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• 2020

In order to reduce the manufacturing cost of MCU chips used in applications such as wireless chargers and USB-C, compared to DP-EEPROM (Double Poly EEPROM), which requires 3 to 5 additional process masks, it is even more necessary MTP(Multi-Time Programmable), which is less than one additional mask and have smaller unit cell size. In addition, in order to improve endurance characteristics and data retention characteristics of the MTP memory cell due to E/P(Erase / Program) cycling, the distribution of the V_TP(Program Threshold Voltage) and the V_TE(Erase Threshold Voltage) needs to be narrow. In this paper, we proposed a current-type BL S/A(Bit-Line Sense Amplifier) circuit, WM(Write Mask) circuit, BLD(BL Driver) circuit and a algorithm, which can reduce the distribution of program and V_T and erase V_T, through compare the target current by performing the erase and program pulse of the short pulse several times, and if the current specification is satisfied, the program or erase operation is no longer performed. It was confirmed that the 256Kb MTP memory fabricated in the Magnachip semiconductor 0.13㎛ process operates well on the wafer in accordance with the operation mode.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2021.10a
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• pp.634-636
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• 2021

In this study, we studied the macro-modeling of an feedback field-effect transistor (FBFET) using SPICE simulation. The previously presented macro-model of the FBFET is consisting of two circuits. one is charge integration circuit, and the other is current generation circuit. The previous current generation circuit has problem that can't predict performance accurately of the circuits, due to implementing only I_DS-V_GS characteristics. To solve this problem, we presents a model that can implement not only I_DS-V_GS characteristics but alos I_DS-V_DS characteristics by adding the diode in the current generation circuit.

• Analytical Science and Technology
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• v.16 no.4
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• pp.269-276
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• 2003

A new type of stripping voltammetry, inverted catalytic stripping voltammetry $IC_tSV$, is introduced. The rhodium-formaldehyde complex in hydrochloric acid gives an inverted catalytic hydrogen peak (reduction current peak during positive-going scan). The characteristics of the inverted peak were studied. By using the peak as analytical peak the detection limit of $1.2{\times}10^{-10}M$ Rh (50s preconcentration) can be reached at the optimal conditions: 0.015% (W/V) HCHO-0.42 M HCl; accumulation potential, -1.1 V; scan rate, 100 mV/s.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.8
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• pp.598-605
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• 2011

The main object of this study is to investigate the Dust Collection Characteristics of multi-layer multi-stage porous plate system with polarization charging mechanism, experimentally. The experiment is carried to analyze the characteristics of pressure drop and collection efficiency for the present system with the experimental parameters such as applied voltage, inlet velocity, inlet concentration and stage number, etc. In results, the pressure drop becomes 18 to $134mmH_2O$, with increment of stage number (1 to 5) at inlet velocity $v_{in}$ = 3.11 m/s ($v_t$ = 18 m/s) and inlet concentration 3 g/m3 for inflow current. In case of both applied voltage 0 kV and non-inflow current, the collection efficiency of 5 stage is 92.5% at $v_{in}$ = 2.58 m/s ($v_t$ = 15 m/s), while it is estimated that the collection efficiency becomes about 6% higher than that of 0 kV and non-inflow as 98.5% at $v_{in}$ = 2.58 m/s for both alternating polarization charge (applied voltage 2.5 kV) and inflow current system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.1
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• pp.1-8
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• 1999

In recent years, concern has been raised about the technique of controlling electrical breakdown by using laser in many fields. Especially, laser has attracted much attention in the Electro-Discharge Machining(EDM) because of its many rrents. 1berefore, this research has been perfonred to obtain fundarrental data for the discharge guide technology by a pulsed Nd:YAG laser which can be awJied to discharge processing machining. 1be experilnnts of laser-guided de discharge have been carried out at low air pressure ranging from 0.2 to 20 torr. The minimum laser-guided de discharge voltage $V_{G.min}$ at the given pressures P and distances d between an anode and a cathode was rreasured It is found that $V_{G.min}$ is much lower than the natural discharge voltage $V_{ND}$, and the values of VGrrin and $V_{ND}$ as a function of P.d has a similar tendency. The laser output energy $E_{out}$ decreases with input pulse duration $t_p$ increasing, and the rrore the value of $t_p$ increases, the higher that of V$V_{G.min}$ is obtained because the number of photons N decreases with $t_p$ increasing. In addition, the laser-guided de discharge range and the discharge guide characteristics as laser outpIt $E_{out}$ was investigated.igated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.782-787
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• 2000

The monolithic single-pole three-throw(SP3T) GaAs PIN diode switch circuit for the broadband and high power application was designed, fabricated and characterized. To improve the power handling capability, buffer layers of the diode employ both low temperature buffer and superlattice buffer. The diode show the breakdown voltage of 65V and turn-on voltage of 1.3V. The monolithic integrated switch employed microstrip lines and backside via holes for low-inductance signal grounding. The vertical epitaxial PIN structure demonstrated better microwave performance than planar type structures due to lower parasitics and higher quality intrinsic region. As the large signal characteristics of the fabricated SP3T MMIC switch, the insertion loss was measured less than 0.6dB and the isolation better than 50dB when the input power was increased from 8dBM to 32dBm at 14.5GHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.292-297
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• 2002

In this paper, a flat-type $L_{-}$-$B_{8}$ mode Ultrasonic Motor[USM] having the size of 80 x 20 x ${1.5}mm^3$($l{\times}\omega{\times}t$) was designed and fabricated to examine the characteristics of an ultrasonic vibration. We used ANSYS simulation program based on FEM to get the optimum design of this USM. As results of experiment, the fastest speed of revolution(v), the maximum torque(T) and the efficiency(n) were 37.5cm/s, 5.0 mN.m and 1.17% when 27.9KHz, 150N, 50V were applied respectively. And this flat-type $L_{-}$-$B_{8}$ mode USM could be controlled the speed of rotor revolution by applied voltage, frequency and pre-load of rotor as well as showed the characteristics of typical drooping torque-speed, large torque and high speed. So, we think that this flat-type $L_{-}$-$B_{8}$ mode USM has characteristics of enough torque and velocity to be usable for applications in forwarding device of an electric card or a paper, etc.