• Title/Summary/Keyword: V-Model

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An Efficient Current-Voltage Model for the AlGaAs/GaAs N-P Heterojunction Diode and its Application to HPTs

  • Park, Jae-Hong;Kwack, Kae-Dal
    • Journal of Electrical Engineering and information Science
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    • v.2 no.4
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    • pp.99-105
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    • 1997
  • The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

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Non-uniform Failure in Superplastic Ti-6Al-4V Alloy (초소성 Ti-6Al-4V 합금에서의 불균일 파손)

  • 김태원
    • Transactions of Materials Processing
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    • v.9 no.6
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    • pp.663-669
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    • 2000
  • A material model has been presented, at the continuum level, for the representation of superplastic deformation coupled with microstructural evolution. The model presented enables the effects of the spatial variation of distributions of grain size to be predicted at the process level. The model has been tested under conditions of both homogeneous and inhomogeneous stress and strain by carrying out detailed comparison of predicted distributions of grain size and their evolutions with experimentally obtained data. Experimental measurements have shown the extent of the spatial variation of the distribution of grain size that exists in the titanium alloy, Ti-6Al-4V. It is shown that whilst not large, the variations in grain size distributions are sufficient to lead to the development of inhomogeneous deformation in test pieces, which ultimately result in localisation of strain and failure.

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Compact Modeling for Nanosheet FET Based on TCAD-Machine Learning (TCAD-머신러닝 기반 나노시트 FETs 컴팩트 모델링)

  • Junhyeok Song;Wonbok Lee;Jonghwan Lee
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.136-141
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    • 2023
  • The continuous shrinking of transistors in integrated circuits leads to difficulties in improving performance, resulting in the emerging transistors such as nanosheet field-effect transistors. In this paper, we propose a TCAD-machine learning framework of nanosheet FETs to model the current-voltage characteristics. Sentaurus TCAD simulations of nanosheet FETs are performed to obtain a large amount of device data. A machine learning model of I-V characteristics is trained using the multi-layer perceptron from these TCAD data. The weights and biases obtained from multi-layer perceptron are implemented in a PSPICE netlist to verify the accuracy of I-V and the DC transfer characteristics of a CMOS inverter. It is found that the proposed machine learning model is applicable to the prediction of nanosheet field-effect transistors device and circuit performance.

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ROCHE MODEL AND ABSOLUTE DIMENSIONS OF THE ECLIPSING BINARY Y CAM WITH A PULSATING COMPONENT (맥동 식쌍성 Y Cam의 ROCHE 모형과 절대 물리량)

  • Lee, J.W.;Kim, C.H.;Kim, S.L.;Youn, J.H.;Kwon, S.G.
    • Journal of Astronomy and Space Sciences
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    • v.19 no.3
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    • pp.187-196
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    • 2002
  • We performed CCD photometric observations of the eclipsing binary Y Cam with a pulsating component, for 16 nights from November 2000 to May 2001 using a V filter attached to the 61-cm reflector at Sobaeksan Optical Astronomy Observatory. Our V light curve and Broglia & Marin's (1974) BV ones were analyzed with Mode 2 for a detached Roche model as well as Model 5 for a semi-detached one in the Wilson-Devinney code. From the analysis, we found the following results: 1) It is hardly discernible from only light curve synthesis which model between the detached and semi-detached ones is a real Roche model of Y Cam. 2) There exist the third light of about 2% and 3% in B and V light curves of Y Cam, respectively. 3) The light curve solution is immune from the light variation due to the pulsation of the primary component of Y cam. However, the detached model rather than the semi-detached one has slightly better fitted to the observations which were get rid of the pulsation effect. 4) The absolute dimensions of Y Cam were calculated for two Roche models.

Photoelastic Stress Analysis of Fixed Partial Dentures (가공의치(架工義齒)에 작용(作用)하는 Stress에 관(關)한 광탄성학적(光彈性學的) 분석(分析))

  • Cho, Won-Haeng
    • The Journal of Korean Academy of Prosthodontics
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    • v.18 no.1
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    • pp.15-35
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    • 1980
  • The purpose of this study was to investigate stresses in the various components of fixed partial dentures restoring the posterior teeth of the lower jaw, and to measure quantitatively the effects of certain modifications in structural design on the stresses in the restorations using two-dimensional photoelasticity. Two-dimensional photoelastic methods were used in this study. Several models of fixed partial dentures were constructed. Shoulder less margins and anatomic occlusal reduction were incorporated in Model 1. Rounded shoulders and flat occlusal reduction were incorporated in Model 2, while Model 3 was a cantilever fixed partial denture. Other similar fixed partial dentures were constructed with V and U notches deliverately included in the region of the fixed joints for comparative reasons. The birefringent materials used in this study were PSM-1 and PSM-5 in standard sheets. PSM-1 was used for constructing the substructure, and PSM-5 was used in making the components of the fixed partial dentures. The two materials were used in the construction of composite photoelastic models. Improved artificial stone was used to represent dental cement in luting the composite photoelastic models. Static loading procedures were used at preplanned sites to represent occlusal loads in the mouth. 35 mm color and B/W film were used to record isochromatics in accordance with photoelastic procedures. Data reduction was performed using the grid method, which helped in, the mathematical integration procedure (Shear difference method) to separate the principal stresses. The results were as follows. 1. Fixed partial dentures do not function in bending as a symmetrical beam. Alternate areas of tension and compression were demonstrated when multiple contact loading was used. 2. The weakest part in posterior fixed partial dentures is the fixed joint. 3. (1) Models I and modified Model I were loaded on the pontic using a 50 pound vertical static load. The shear stress near the posterior fixed joint in Model 1 (U notches) was+129.4 p.s.i., and at the same fixed joint in modified Model 1 (V notches) was+239.4 p.s.i. The concentration of stress in fixed joint was reduced by 50% when U notches replaced the V notches. (2) Modified Model 2 was loaded using a multiple contact loader at a total load of 125 pounds. The difference between the principal stresses (${\sigma}_1-{\sigma}_2$), shear stress, at the V notches was+600 p.s.i., and at the U notches was+3l7 p.s.i. The shear stress was reduced by 50% when U notches replaced the V notches. V-grooves at the fixed joints should be avoided, and should be replaced by regular shaped U-grooves. 4. Cantilever fixed partial dentures had much higher stresses at the fixed joint than fixed partial dentures that were attached at both ends.

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ANALYSIS OF THE LiF:Mg,Cu,Si TL AND THE LiF:Mg,Cu,P TL GLOW CURVES BY USING GENERAL APPROXIMATION PLUS MODEL

  • Chang, In-Su;Lee, Jung-Il;Kim, Jang-Lyul;Oh, Mi-Ae;Chung, Ki-Soo
    • Journal of Radiation Protection and Research
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    • v.34 no.4
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    • pp.155-164
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    • 2009
  • In this paper, we used computerized glow curve deconvolution (CGCD) software with several models for the simulation of a TL glow curve which was used for analysis. By using the general approximation plus model, parameters values of the glow curve were analyzed and compared with the other models parameters (general approximation, mixed order kinetics, general order kinetics). The LiF:Mg,Cu,Si and the LiF:Mg,Cu,P material were used for the glow curve analysis. And we based on figure of merits (FOM) which was the goodness of the fitting that was monitored through the value between analysis model and TLD materials. The ideal value of FOM is 0 which represents a perfect fit. The main glow peak makes the most effect of radiation dose assessment of TLD materials. The main peak of the LiF:Mg,Cu,Si materials has a intensity rate 80.76% of the whole TL glow intensity, and that of LiF:Mg,Cu,P materials has a intensity rate 68.07% of the whole TL glow intensity. The activation energy of LiF:Mg,Cu,Si was analyzed as 2.39 eV by result of the general approximation plus(GAP) model. In the case of mixed order kinetics (MOK), the activation energy was analyzed as 2.29 eV. The activation energy was analyzed as 2.38 eV by the general order kinetics (GOK) model. In the case of LiF:Mg,Cu,P TLD, the activation energy was analyzed as 2.39 eV by result of the GAP model. In the case of MOK, the activation energy was analyzed as 2.55 eV. The activation energy was analyzed as 2.51 eV by the GOK model. The R value means different ratio of retrapping-recombination. The R value of LiF:Mg,Cu,Si TLD main peak analyzed as $1.12\times10^{-6}$ and $\alpha$ value analyzed as $1.0\times10^{-3}$. The R of LiF:Mg,Cu,P TLD analyzed as $7.91\times10^{-4}$, the $\alpha$ value means different ratio of initial thermally trapped electron density-initial trapped electron density (include thermally disconnected trap electrons density). The $\alpha$ value was analyzed as $9.17\times10^{-1}$ which was the difference from LiF:Mg,Cu,Si TLD. The deep trap electron density of LiF:Mg,Cu,Si was higher than the deep trap electron density of LiF:Mg,Cu,P.

Analysis of electrical characteristics for p-type silicon germanium metal-oxide semiconductor field-effect transistors (SiGe pMOSFET의 전기적 특성 분석)

  • Ko Suk-woong;Jung Hak-kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.2
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    • pp.303-307
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    • 2006
  • In this paper, we have designed the p-type metal-oxide semiconductor field-effect transistor(pMOSFET) for SiGe devices with gate lengths of $0.9{\mu}m$ and $0.1{\mu}m$using the TCAD simulators. The electrical characteristics of devices have been investigated over the temperatures of 300 and 77K. We have used the two carrier transfer models(hydrodynamic model and drift-diffusion model). We how that the drain current is higher in the hydrodynamic model than the drift-diffusion model. When the gate length is $0.9{\mu}m$, the threshold voltage shows -0.97V and -1.15V for 300K and 77K, respectively. The threshold voltage is, however, nearly same at $0.1{\mu}m$ for 300K and 77K.

The tunnel model tests of material development in different surrounding rock grades and the force laws in whole excavation-support processes

  • Jian Zhou;Zhi Ding;Jinkun Huang;Xinan Yang;Mingjie Ma
    • Geomechanics and Engineering
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    • v.36 no.1
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    • pp.51-69
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    • 2024
  • Currently, composite lining mountain tunnels in China are generally classified based on the [BQ] method for the surrounding rock grade. Increasingly, tunnel field construction is replicated indoors for scale down model tests. However, the development of analogous materials for model tests of composite lining tunnels with different surrounding rock grades is still unclear. In this study, typical Class III and V surrounding rock analogous materials and corresponding composite lining support materials were developed. The whole processes of excavation-support dynamics of the mountain tunnels were simulated. Data on the variation of deformations, contact pressures and strains on the surrounding rock were obtained. Finally, a comparative analysis between model tests and numerical simulations was performed to verify the rationality of analogous material development. The following useful conclusions were obtained by analyzing the data from the tests. The main analogous materials of Class III surrounding rock are barite powder, high-strength gypsum and quartz sand with fly ash, quartz sand, anhydrous ethanol and rosin for Class V surrounding rock. Analogous materials for rockbolts, steel arches are replaced by aluminum bar and iron bar respectively with both shotcrete and secondary lining corresponding to gypsum and water. In addition, load release rate of Class V surrounding rock should be less than Class III surrounding rock. The fenestration level had large influence on the load sharing ratio of the secondary lining, with a difference of more than 30%, while the influence of the support time was smaller. The Sharing ratios of secondary lining in Class III surrounding rock do not exceed 12%, while those of Class V surrounding rock exceed 40%. The overall difference between the results of model tests and numerical simulations is small, which verifies the feasibility of similar material development in this study.

Development of Target Vehicle State Estimation Algorithm Using V2V Communication (V2V 통신을 이용한 상대 차량 상태 추정 알고리즘 개발)

  • Kwon, Woojin;Jo, Ara;Yi, Kyongsu
    • Journal of Auto-vehicle Safety Association
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    • v.14 no.2
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    • pp.70-74
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    • 2022
  • This paper describes the development of a target vehicle state estimation algorithm using vehicle-to-vehicle (V2V) communication. Perceiving the state of the target vehicle has great importance for successful autonomous driving and has been studied using various sensors and methods for many years. V2V communication has advantage of not being constrained by surrounding circumstances relative to other sensors. In this paper, we adopt the V2V signal for estimating the target vehicle state. Since applying only the V2V signal is improper by its low frequency and latency, the signal is used as additional measured data to improve the estimation accuracy. We estimate the target vehicle state using Extended Kalman filter (EKF); a point mass model was utilized in process update to predict the state of next step. The process update is followed by measurement update when ego vehicle receives V2V information. The proposed study evaluated state estimation by comparing input V2V information in an experiment where the ego vehicle follows the target vehicle behind it.

NUMERICAL SIMULATION OF FLOW AND HEAT TRANSFER IN A COOLING CHANNEL WITH STAGGERED V-SHAPED RIBS (엇갈린 V-형 리브가 부착된 냉각유로에서의 열유동 수치해석)

  • Myong, H.K.;Kim, K.Y.
    • Journal of computational fluids engineering
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    • v.13 no.4
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    • pp.107-113
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    • 2008
  • The present study numerically simulates the flow and heat transfer characteristics of rib-induced secondary flow in a square cooling channel with staggered V-shaped ribs, extruded on both walls. The rib pitch-to-height ratio (p/h) varies from 2.8 to 10 with the rib-height-to-hydraulic diameter ration (h/$D_h$)of 0.07 and the Reynolds number of 50,000. Shear stress transport (SST) turbulence model is used as a turbulence model. Computational results show that complex secondary flow patterns are generated in the channel due to the snaking flow in the streamwise direction for all tested cases. In the range of p/h=5 to 10 the staggered V-shaped rib gives about 3 times higher heat transfer augmentation than the reference smooth pipe with high heat transfer on both front side and the area around the leading edge of the ribs, while the former cases give about 18 times higher streamwise pressure drop than the latter ones. However, for the thermal performances, based on the equal pumping power condition, the case of p/h=2.8 gives the best result among three cases, mainly due to relatively low streamwise pressure drop, although it gives relatively low heat transfer augmentation.