• Journal of Magnetics
• /
• 제14권1호
• /
• pp.11-14
• /
• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• The Korean Journal of Physiology
• /
• 제17권1호
• /
• pp.1-11
• /
• 1983

1) 토끼동방결절의 작은 절편에 미세 전극 두개로 voltage clamp를 하고 과분극에 의하여 활성화되는 내향전류, $i_f$의 동력학적 성상을 분석하였다. 2) 전류 $i_f$는 $10^{-7}g/ml$ TTX와 2 mM $Mn^{2+}$의 존재하에서 과분극 pulse에 의하여 활성화되었으며 그 범위는 $-45\;mV{\sim}-75\;mV$였다. 전류의 크기와 시간경과는 막전압이 과분극될수록 커지고 빨라졌다. 3) Envelope test결과 $i_f$전류는 단일 gate에 의하여 지수합수적 (exponential)으로 조절됨을 보였다. 4) 2 mM의 $Ba^{2+}$에 의하여$i_f$전류의 크기는 감소하고 시간경과도 느려졌으며 반응속도상수와 gating molecule의 열리고 닫히는 반응계수(rate coefficient; ${\alpha}_s$, ${\beta}_s$)와 막전압 관계곡선을 과분극쪽으로 이동시켰다. 이러한 $Ba^{2+}$의 효과는 24 mM $K^+$에 의하여 일부 상쇄되었다.

• 한국산업정보학회논문지
• /
• 제17권7호
• /
• pp.51-57
• /
• 2012

본 논문에서는 안전한 V2V 통신과 V2I 통신을 보장하는 ECDH(Elliptic Curve Diffie Hellman) 기반 그룹키를 제안하였다. 본 논문에서 제안하는 ECDH기반 그룹키는 AAA 서버를 사용하지 않고 차량과 차량사이의 그룹키인 VGK(Vehicular Group Key), 차량 그룹 사이의 그룹키인 GGK(Globak Group Key), 그리고 차량과 RSU사이의 그룹키인 VRGK(Vehicular and RSU Group Key)를 ECDH 알고리즘을 이용하여 생성한다. 차량과 RSU 사이의 그룹키인 VRGK는 현재 RSU에서 다음 RSU에게로 RGK(RSU Group Key)로 암호화하여 안전한 채널을 통하여 전달하기 때문에 완벽한 순방향 기밀(Perfect Forward Secrecy) 보안 서비스가 제공된다. 또한, 메시지를 전송한 차량이 해당 그룹의 구성원인지를 그룹키 이용하여 확인함으로써 Sybil공격을 탐지할 수 있다. 그리고 그룹간의 안전한 통신으로 불필요한 네트워크 트래픽이 발생하지 않으므로 메시지 전송 시간 및 서버의 오버헤드를 줄일 수 있다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.115-115
• /
• 2008

본 논문에서는 최적화된 ECMP 공정을 위하여 I-V 특성 곡선과 CV법을 이용하여 패시베이션 막의 active, passive, transient, trans-passive 영역의 전기화학적 특성을 알아보았으며, Cu막의 표면 형상을 Scanning Electron Microscopy (SEM) 측정과 금속 화학적 조성을 Energy Dispersive Spectroscopy (EDS) 분석을 통해 분석하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제5권6호
• /
• pp.219-222
• /
• 2004

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
• /
• pp.113-116
• /
• 1996

A model of a photovoltaic array written in PSPICE is presented in this paper. PSPICE is used to display array characteristics (I-V, P-V curve) as a function of parameters such as insulation and temperature. This paper is display in detail through a example of SM-50 model.

• 전기학회논문지
• /
• 제61권3호
• /
• pp.407-412
• /
• 2012

This study investigated the process of thermal-induced growth of micro-crack developed at the crystalline solar cell using EL image, determined the output characteristic according to the pattern of micro-crack, analyzed the I-V characteristic according to the pattern of crack growth, and predicted the output value using simulation. The purpose of this study was, therefore, to investigate the process of thermal-induced growth of micro-crack developed at the early stage of PV module completion using EL image, to analyze the resulting decrement of output and predict the output value using simulation. It was observed that the crack grew increasingly by the thermal condition, and accordingly the lowering of output was accelerated. The output values of crack patterns with various direction were predicted using simulation, resulting in close I-V curve with only around 4% of error rate. It is considered that it is possible to predict the electric characteristic of solar cell module using only pattern of micro-crack occurred at solar cell based on our results.

• 반도체디스플레이기술학회지
• /
• 제6권4호
• /
• pp.11-15
• /
• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• 한국자기학회지
• /
• 제22권1호
• /
• pp.23-26
• /
• 2012

정현파 자속밀도 조건에서 연자성 재료의 교류자기손실을 측정하기 위한 새로운 방법을 제시하였다. 본 방법은 입력전압파형을 결정짓기 위해 통상 이용하는 $H_i(B_i)$곡선대신 $V_{in}$(B)곡선을 이용함으로서 자기장, 자속밀도 그리고 입력전압간의 위상차를 고려할 필요가 없이 직접 입력전압파형을 얻을 수 있어 프로그램이 간편하게 되는 장점을 가지고 있었다. 개발된 측정방법의 유효성을 1 kHz, 10 kHz 주파수에서 페라이트 코어로 확인할 수 있었다.

• Journal of Power Electronics
• /
• 제19권5호
• /
• pp.1259-1269
• /
• 2019

PV system performance is dependent on different irradiations and temperature values in addition to the capability of the employed PV inverter / maximum power point tracker (MPPT) circuit or algorithm. Therefore, it would be appropriate to use a PV simulator capable of producing identical repeatable conditions regardless of the weather to evaluate the performance of inverter / MPPT circuits and algorithms. In accordance with this purpose, a photovoltaic (PV) array simulator is presented in this paper. The simulator is designed to generate current-voltage (I-V) and power-voltage (P-V) curves of a PV panel. Series connected cascaded modules constitute the basic part of the simulator. This feature also allows for the modeling of PV arrays since the number of modules can be increased and high voltage values can be reached with the simulator. In addition, the curves obtained at the simulator output become similar to the actual curves of sample PV panels with an increase in the number of modules. In order to show the validity of the proposed simulator, it was simulated for various situations such as panels under full irradiance and partial shading conditions. After completing simulations, experiments were realized to support the simulation study. Both simulation and experimental results show that the proposed simulator will be very useful for researchers to carry out PV studies under laboratory conditions.