• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.95-95
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• 2008

본 연구에서는 SiGe p-MOSFET을 제작하여 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성을 측정하였다. Si 기판위에 성장한 $Si_{0.88}Ge_{0.12}$으로 제작된 SiGe p-MOSFET의 채널은 게이트 산화막과 20nm 정도의 Si Spacer 층으로 분리되어 있다. 게이트 산화막은 열산화에 의해 70$\AA$으로 성장되었고, 게이트 폭은 $25{\mu}m$, 게이트와 소스/드레인 사이의 거리는 2.5때로 제작되었다. 제작된 SiGe p-MOSFET은 빠른 동작 특성, 선형성, 저주파 노이즈 특성이 우수하였다. 제작된 SiGe p-MOSFET의 ESD 에 대한 소자의 신뢰성과 내성을 연구하기 위하여 SiGe P-MOSFET에 ESD를 lkV에서 8kV까지 lkV 간격으로 가한 후, SiGe P-MOSFET의 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성 변화를 분석 비교하였다.

• Journal of the Korean Society of Radiology
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• v.14 no.1
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• pp.1-6
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• 2020

In this study, it was intended to replace the existing plane parallel ionization chamber, which requires cross-calibration in electron beam treatment. The semiconductor compounds HgI₂ was fabricated as detector, and the characteristics of HgI₂ detector for the 6, 9 and 12 MeV electron beam was analyzed in the linear accelerator. It was also intended to evaluate the possibility of substitution with existing detectors and their applicability as electron beam dosimetry and to use them as a basic study of the development of electronic beam dosimeter. As a result of reproducibility, RSD was 0.4246%, 0.5054%, and 0.8640% at 6, 9, and 12 MeV energy, respectively, indicating that the output signal was stable. As a result of the linearity, the R² was 0.9999 at 6 MeV, 0.9996 at 9 MeV, and 0.9997 at 12 MeV showed that the output signal is proportional to HgI₂ as the dose is increased. The HgI₂ detector of this study is highly applicable to electron beam measurement, and it may be used as a basic research on electron beam detection.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.679-680
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• 2006

Various different types of joining between High Tc superconducting(HTS) tapes were prepared and current-voltage(I-V) characteristic curves were investigated at 77 K, liquid nitrogen temperature. Two typos of HTS tapes wore used, one is no laminated tape(Sumitomo high strength type tape) and the other stainless steel laminated tape(AMSC(American Superconductors Inc.) 3ply tapes) Sample joints were lap-jointed with indium or solder. Joint resistances between Sumitomo tapes with 4-10 mm in length were estimated from I-V curves and in the range of $4-8n{\Omega}$ at 77 K. Joint resistances of AMSC tapes were in the range of $140-170n{\Omega}$, much higher than them of Sumitomo samples. The n-values of jointed HTS tapes were 50% of them with no joint. In AMSC tapes, indium is better than solder as the jointing material.

• Journal of IKEEE
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• v.17 no.3
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• pp.221-228
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• 2013

About functional parameters of a LED/UVLED (Light Emitting Diode/Ultra Violet LED), one of the most important parameters is the I-V characteristic. By researching factors affect to the I-V characteristic of uvled, we found that beside of the structure of the device itself, there is the influence of the electrode materials, electrode shapes, the process of wiring and packaging. In this work, we want to improve the performance of UVLED to find out the optimal mask design principles. The study is based on theoretical mathematical models, as well as the use of simulation software tool Comsol. From all results obtained, the team has improved mask design to manufacture electrodes for GaN-based UVLED. Electrode masks are designed by three softwares, which are Intellisuite, Klayout and AutoCad. Intellisuite masks would be used in fabrication simulation while Klayout and AutoCad are used to fabricate electrodes in experiments. As well as, we silmulated the structure of an uvled 355nm emission wavelength by TCAD software, in order to compare with uvled sample that has the same emission wavelength.

• Progress in Superconductivity and Cryogenics
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• v.14 no.2
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• pp.20-23
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• 2012

With continuous development of the 2nd generation HTS conductor, the critical current of the conductor is also increasing. However, many applications require more than 2 conductors in parallel to transport large current. Applications such as HTS power cables and some HTS current leads usually need much larger transport current than that provided by a single conductor and they require more than several tens of HTS conductors. In the case of parallel connection of multiple HTS conductors, the current distribution depends on the contact resistance of each conductor at the terminals for DC operation. The non-uniform distribution of the terminal resistances results in a non-uniform distribution of the current. The resultant current non-uniformity affects on the measurement of the I-V curve and the thermal performance of the multiple conductors. This paper describes the I-V curves obtained from multiply connected HTS conductors with different terminal contact resistances to investigate the relationship between the distorted I-V curve and heat generation.

• Speech Sciences
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• v.1
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• pp.55-81
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• 1997

In the present paper, V-to-V coarticulation in Korean VCV sequences is discussed, focusing on links between consonantal production and degree of V-to-V coarticulation. Temporal and spatial differences between three types of Korean alveolar stops (lax /t/. aspirated /$t^h$/ and thense /t'/) are examined from VCV sequences involving all possible combinations of three Korean unrounded vowels /a, i,/ based on spectrographic and electrographic data(two male speakers and one female speaker and one female speaker respectively). Closure duration and voice onset time (VOT) were measured from acoustic data. 'Total duration', which is defined as the sum of the closure duration and the VOT, was also calculated in order to see the temporal distance between two vowels in a VCV sequence. Differences in lingual-palatal contact pattern at the maximum contact (MC) point between the three types of stop were observed from EPG data. V-to-V coarticulation was investigated by measuring the offset or onset of the second formant (F2) of the target vowels from spectrograms. Two different dimensions of articulation, temporal and spatial, seem to playa role in determining the degree of V-to-V coarticulation. The degree of V-to-V anticipatory coarticulation is influenced by the spatial characteristics of the intervening consonant while the degree of carryover coarticulation is influenced by the temporal characteristics of the consonant.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• Journal of the Korean Electrochemical Society
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• v.18 no.4
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• pp.172-181
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• 2015

Solid Oxide Fuel Cells (SOFC) continue to be among the most promising alternative energy devices. This paper addresses i-V characteristics of SOFC with a focus on air flow rate along the planar anode electrodes. To address this, detailed Butler-Volmer kinetics are implemented in a general-purpose CFD code FLUENT. The numerical results were validated against experimental data from the literature showing excellent match with i-V polarization data ranging 1V-0.4V. Numerical calculations of fuel cell operation under different flow rare conditions were performed in three-dimensional geometries. Results are presented in terms of concentration distribution of hydrogen, oxygen, and water. The simulations and results indicate that advanced CFD with UDF(User-Defined Function) of Butler-Volmer kinetics can be used to identify the conditions leading to air flow rate and specific surface area and guide development of operating conditions and improve the fuel cell system performance.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1924-1926
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• 2005

Poly(methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observes by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for repeated annealing cycles at $100^{\circ}C$. 1-V measured at various delay times $(0{\sim}20sec)$ showed little change and the absence of hysteresis in the I-V characteristics with delay times, which eliminate the possibility of deep traps in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.