• 제목/요약/키워드: V-I characteristics

검색결과 2,035건 처리시간 0.028초

탄화규소(4H) 기판의 초고내압용 접합 장벽 쇼트키 다이오드의 특성 모델링 (Characteristics Modeling of Junction Barrier Schottky Diodes for ultra high breakdown voltage with 4H-SiC substrate)

  • 송재열;방욱;강인호;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 추계종합학술대회
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    • pp.200-203
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    • 2007
  • 넓은 에너지 갭의 물질인 탄화규소(4H)기판을 사용하여, 초고내압을 위한 접합장벽 쇼트키 구조의 소자를 설계하여 제작하였다. 측정결과로써 소자의 역방향 I-V 특성은 1000V 이상의 항복전압을 보였고 p-grid의 설계 최적 길이는 $3{\mu}m$ 간격이였다. 이 연구에서는 제작한 소자의 공정 조건 파라미터들을 사용하여 I-V 특성을 모델링 하였고 I-V 특성 파라미터들을 추출하여 실제 소자 파라미터와 비교, 분석하였다.

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An approach to model the temperature effects on I-V characteristics of CNTFETs

  • Marani, Roberto;Perri, Anna G.
    • Advances in nano research
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    • 제5권1호
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    • pp.61-67
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    • 2017
  • A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFET behaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.

실리콘 젤의 전압-전류 특성 (V-I Properties of Silicone Gel)

  • 송병기;최성오;신종열;이태훈;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.377-380
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    • 1997
  • In order to investigate the electrical characteristics due to the curing condition of silicone gel for Power Semiconductor, the V-I characteristics is studied. For experiment, We have made up several samples of different curing temperature and time such as 1[H],2[H] at 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$]. As a result of the V-I characteristics, it is confirmed that the properties of specimen cured at 170[$^{\circ}C$], 2[H] is stable.

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Matlab을 이용한 PV모듈의 I-V시뮬레이션 관한 연구 (Study on I-V simulation for PV module with matlab)

  • 홍종경;정태희;강기환;안형근;한득영
    • 한국태양에너지학회 논문집
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    • 제29권4호
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    • pp.1-6
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    • 2009
  • This paper estimates numerically cells the electrical characteristics of the PV module with environmental changes such as shunt resistance, series resistance, temperature, irradiance. Series resistance $R_s$ including diode characteristic resistance $r_d$ is derived from the p-n junction diode model. I-V characteristics of this model with series resistance $R_s$ are simulated on Matlab. Finally, theoretical I-V characteristics are compared with those of solar simulator. Those results agreed well within the manufacturer's maximum error range 3%

PEM 연료전지의 전력-전류, 전압-전류 특성에 관한 연구 (A Study on the P-I, I-V Characteristics of PEMFC)

  • 정유라;최용성;황종선;이경섭
    • 전기학회논문지P
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    • 제58권4호
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    • pp.557-562
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    • 2009
  • Recently, researchers are developing a new, clean, renewable and sustainable energy to the industrial areas and the residential areas. Solar cell and fuel cell energy are presented in this paper. The paper shows the P-I and I-V characteristics of fuel cells which are connected in parallel and series. And the voltage drop of internal resistance of the fuel cell decreases with the increasing of the current of the fuel cell. A voltage drop at the internal resistance is increased according to the current, thus the terminal voltage is decreased. The internal resistance is calculated $0.3[\Omega]$ from maximum power transfer condition.

Polyimide(PI)LB막의 MIM구조 소자내에서의 switching전도특성 (Switching conduction characteristics of PI LB Film in MIM junctions)

  • 김태성;김현종
    • E2M - 전기 전자와 첨단 소재
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    • 제8권2호
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    • pp.176-183
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    • 1995
  • The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

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비정질 칼코게나이드 반도체 박막 경계면의 전기적 특성 (Electrical characteristics of the this film interface of amorphous chalcogenide semiconductor)

  • 박창엽
    • 전기의세계
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    • 제29권2호
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    • pp.111-117
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    • 1980
  • Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

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Sub-50nm Double Gate MOSFET의 특성 분석 (Characteristics analysis of Sub-50nm Double Gate MOSFET)

  • 김근호;고석웅;이종인;정학기
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2002년도 추계종합학술대회
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    • pp.486-489
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    • 2002
  • 본 논문에서는 50nm 이하의 double gate MOSFET의 특성을 조사하였다. 1.5V의 main gate 전압과 3V의 side gate 전압이 인가될 때 I-V 특성으로부터 IDsat=510$\mu$A/$\mu\textrm{m}$을 얻을 수 있었다. 이때, 전달 컨덕턴스는 111$\mu$A/V, subthreshold slope는 86mV/dec, DIBL값은 51.3mV이다. 그밖에 TCAD tool이 소자 시뮬레이터로서 적합함을 나타내었다.

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음극전극의 종류에 따른 유기발광소자의 특성에 관한 연구 (A Study on Characteristics of Organic Light-Emitting Device with Various Cathodes)

  • 노병규;김중연;오환술
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.37-40
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    • 2000
  • This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al:Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

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태양광발전 시스템의 일사량에 따른 전력 패턴 분석 (Analysis of Power Pattern According to Irradiation for Photovoltaic Generation System)

  • 이경섭
    • 전기학회논문지P
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    • 제58권4호
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    • pp.602-608
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    • 2009
  • In this thesis, output voltage, current and power of solar module were classified by irradiation from data of overall operating characteristics collected for one year in order to manage efficient photovoltaic generation system and deliver maximum power. In addition, from these data, correlations between irradiation of photovoltaic cell and amount of power given by photovoltaic cell was quantitatively examined to deduce optimization of the design and construction of photovoltaic generation system. As I-V characteristics according to a temperature range of 10~50[$^{\circ}C$], the area of I-V characteristics were increased with an increase in temperature. Since this area corresponds to the power, output power is thought to have increased with temperature. As output power characteristics according to a temperature range of 10~50[$^{\circ}C$], output power was increased with an increase in temperature. Since output power increases with temperature increase, the result corresponds well to the related equation on temperature and output power. As I-V characteristics according to a irradiation range of 100~900 [$W/m^2$], voltage and current were increased with an increase in irradiation. The result is thought of as an increase in output power with increasing irradiation. As output power characteristics according to a irradiation range of 100~900 [$W/m^2$], output power was increased with increasing irradiation. This result corresponds well to the related equation on irradiation and output power.