• Korean Journal of Clinical Laboratory Science
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• v.38 no.3
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• pp.224-230
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• 2006

Up to now, there have been rare clinical studies on leaders and aerobics athletes. To get the useful data for protecting from auditory disorder, we selected 15 female aerobics leaders (experimental group) and 15 females (control group) unexperienced in aerobics and a without neurological and octolaryngological disorder. The average age was $34.87{\pm}8.80$ (experimental group) and $34.07{\pm}8.45$ (control group) years, and the average career of an aerobics leader (experimental group) was $8.33{\pm}4.73$ years. We measured the auditory evoked potential (AEP) of the two groups treated with 70, 75 and 85 dB intensity from January 2006 to May 2006 and analyzed the absolute latency (AL) and interpeak latency (IPL) by the SPSS/pc+ 12.0 program. In the comparison of the AL between the experimental group and the control group according to intensity, both ears treated with 70 and 75 dB had a significant difference (p<0.05) in the I, III, V wave and in the I, V wave respectively, and the experimental group treated with 85 dB showed a difference in the I, III, V wave (left ear) and in the I wave (right ear) respectively. The IPL of the two groups treated with various intensities had no prolongation. In the comparison of the AL between the experimental group and the control group according to ages, the experimental group in their 20s treated with 70 dB showed a significant difference (p<0.05) in the V wave (left ear) and in the I, III, V wave (right ear), and the experimental group in their 20s treated with 75 dB in the I, III wave (left ear) and in I, III, V wave (right ear), and experimental group in their 20s treated with 85 dB in the V wave (left ear) and in the III, V wave (right ear). The experimental group in their 30s treated with 70 dB had a significant difference (p<0.05) only in the V wave (right ear). Only in the IPL of subjects in their 20s treated with 85 dB, III-V and I-V of both ears was extended. In the comparison of the AL and IPL according to career, there was no significant difference between the two groups. From this results, we concluded that the lower sound intensity (70 dB) showed a more significant difference in the experimental group than the control group. We concluded that the leader of aerobics exposed to louder sounds than normal people are affected by auditory neurological and octolaryngological disorders. So we think that the leaders of aerobics need to control the noise level for protecting themselves against a disease.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.890-898
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• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.229-232
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• 2001

4H-SIC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco's 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8V pinch off voltage, under $V_{GS=0V}$, $V_{DS=25V}$ conditions, $I_{DSS=270㎃}$mm, $G_{m=45㎳}$mm were obtained. Through the power simulation 2GHz, at the bias of $V_{GS=-4V}$ and $V_{DS=25V}$, 10dB Gain, 34dBm(1dB compression point)output power, 7.6W/mm power density, 37% PAE(power added efficiency) were obtained.d.d.d.

• Phonetics and Speech Sciences
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• v.2 no.3
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• pp.23-27
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• 2010

The purpose of this study was to find how English vowels /a, e, i, o, u/ affect the production of English labials /p, b, f, v/ by Korean learners of English. Sixty syllables were composed by five vowels and four labials in the syllable types CV, VC, and VCV. The nonsense syllables were produced three times by nine subjects. The major results show that (1) in inter-vocalic position, the subjects had higher scores in producing /v/ composed with /a, e, o/ and /u/, while subjects had lower scores in producing /p/ with /i/ and /o/, (2) in post-vocalic position, the subjects had higher scores in producing /v/ and /f/ with /a, e/, and /o/, while subjects had lower scores in producing /b/ with /e/ and /i/, and (3) in pre-vocalic position, the subjects had higher scores in producing /v/ with /e, o, u/ and /f/ with /u/, while subjects had lower scores in producing /b/ with /e/, /i/ and /u/. The results suggest that on the whole, Korean learners of English have much difficulty in producing /p/ with /i/ in inter-vocalic condition and /b/ with /i, /e/ in pre-vocalic position.

• Journal of applied mathematics & informatics
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• v.27 no.5_6
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• pp.1157-1163
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• 2009

Let G be a graph with vertex set V(G) and let f be a nonnegative integer-valued function defined on V(G). A spanning subgraph F of G is called a fractional f-factor if $d^h_G$(x)=f(x) for all x $\in$ for all x $\in$ V (G), where $d^h_G$ (x) = ${\Sigma}_{e{\in}E_x}$ h(e) is the fractional degree of x $\in$ V(F) with $E_x$ = {e : e = xy $\in$ E|G|}. In this paper it is proved that if ${\delta}(G){\geq}{\frac{b^2(k-1)}{a}},\;n>\frac{(a+b)(k(a+b)-2)}{a}$ and $|N_G(x_1){\cup}N_G(x_2){\cup}{\cdots}{\cup}N_G(x_k)|{\geq}\frac{bn}{a+b}$ for any independent subset ${x_1,x_2,...,x_k}$ of V(G), then G has a fractional f-factor. Where k $\geq$ 2 be a positive integer not larger than the independence number of G, a and b are integers such that 1 $\leq$ a $\leq$ f(x) $\leq$ b for every x $\in$ V(G). Furthermore, we show that the result is best possible in some sense.

• Speech Sciences
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• v.9 no.4
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• pp.113-130
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• 2002

Measurements were made of pressure rise time (PoRT), voice cessation time, flattened peak intraoral air pressure (Po), pressure static time (PoST), pressure-fall time and the duration of oral closure as four English speakers uttered isolated nonsense $V_{1}CV_{2}$ words containing /b/ and /p/ ($V_{1}=V_{2}$ and the V was /$\alpha$/), with stress on either $V_{1}orV_{2}$ alternately. The hypothesis tested was: The tense stop consonant. will be characterized either by a higher Po or a longer PoST, and/or by both against lax. Findings: (1) PoRT was significantly greater in /b/ than /p/, (2) the voiceless stop /p/ produced generally greater mean Po, averaged across five tokens, than its voiced counterpart /b/, but statistically insignificant, and (3) altogether, across stress, tokens and subjects, the difference in the calculated pressure static time (PoSTc), i.e., PoST + PoRT, between /p/ and /b/ was highly significant (p $\leq$ 0.003). Although further investigations remain to be taken, the results strongly supported the linguistic hypothesis of tense-lax distinction, with /b/ being lax and /p/ tense. Airflow resistance at the glottis and supraglottal air volume are assumed to be responsible for much of difference in PoRT between /p/ and /b/. The PoSTc reflecting, although indirectly, the respiratory efforts during the oral closure of a stop, was a convincing phonetic parameter of the consonantal tenseness based on respiratory efforts. The effects of stress on Po and PoSTc were inconsistent, and the shorter PoRT than consonantal constriction interval was always accompanied by Po and PoST.

• The Journal of the Convergence on Culture Technology
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• v.5 no.2
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• pp.367-373
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• 2019

As the number of Battery Electric Vehicle (BEV) is increasing dramatically Vehicle-to-Grid (V2G) te chnology also has been spotlight from industry and academia recently. With help of V2G technology Battery of EV can play many important roles like as energy storage system (ESS) and electric energy resource in Smart Grid environment. This paper provides comprehensive review of Vehicle-to-Home(V2H), Vehicle-to-Building(V2B) and Vehicle-to-Grid(V2G) technologies. The economical analysis of these technologies is also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• East Asian mathematical journal
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• v.33 no.1
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• pp.103-113
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• 2017

We provide quantitative two weight estimates for the commutator of the Hilbert transform under certain conditions on a pair of weights (u, v) and b in $Carl_{u,v}$. In [10] and [11], Bloom's inequality is shown in a modern setting, and the boundedness of the commutators is provided by assuming both weights u, v are $A_2$ and $b{\in}BMO_{\rho}$. In the present paper we show that the condition on b can be replaced by $Carl_{u,v}$ by using the joint $A^d_2$ condition.