• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.11-17
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• 1992

Vibration-to-vibration energy transfer probabilities for $HF(v=n)+H_2(v=0){\to}HF(v=n-1)+H_2(v=1)$ and $DF(v=n)+D_2(v=0){\to}DF(v=n-1)+D_2(v=1)$ including both the vibration-to-vibration and translation (V-V, T) and vibration-to-vibration and rotation (V-V, R) energy transfer paths have been calculated semiclassically using a simplified collision model and Morse-type intermolecular interaction potential. The calculated results are in reasonably good agreement with those obtained by experimental studies. They also show that the transition processes for $HF(v=1-3)+H_2(v=0){\to}HF(v=0-2)+H_2(v=1)$ and $DF(v=1,\;4)+D_2(v=0){\to}DF(v=0,\;3)+D_2(v=1)$ are strongly dependent on the V-V, T path at low temperature but occur predominantly via the V-V, R path with rising temperature. The vibration-to-vibration energy transfer for $HF(v=4)+H_2(v=0){\to}HF(v=3)+H_2(v=1)$ and $DF(v=2-3)+D_2(v=0){\to}DF(v=1-2)+D_2(v=1)$ occur predominantly via V-V, R path and V-V, T path through whole temperatures, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.323-324
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• 2019

For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.41-47
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• 2011

A novel digital instrumentation amplifier(DIA) converting universal signal inputs into 5V voltage-output for industry standard sensor signal processing was designed. The circuit consists of a commercial instrumentation amplifier, seven analog switches, two voltage references of 1.0V and -10.0V, and four resistors. The converting principle is the circuit reconstruction by switches for resistor values and reference voltages according to input signals. The simulation result shows that the DIA has a good output voltage characteristics of 0~5V for the input voltage of 0V~5V, 1V~5V, -10V~+10V, and 4mA~20mA. The nonlinearity error was less than 0.1% for the four type signal inputs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.239-244
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• 2017

We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

• Journal of the Chungcheong Mathematical Society
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• v.24 no.3
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• pp.609-616
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• 2011

Observing that $vX{\times}vY$ is a Wallman realcompactification of $X{\times}Y$ if $v(X{\times}vY)=vX{\times}vY$, we show that $v(X{\times}Y)=vX{\times}vY$ if and only if $X{\times}Y$ is z-embedded in $vX{\times}vY$ and $vX{\times}vY$ is a Wallman compactification of $X{\times}Y$.

• Journal of Bio-Environment Control
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• v.10 no.2
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• pp.75-79
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• 2001

Stem firmness and flowering response of cut lily as influenced by medium composition (Control; Upland soil, Pt; Peatmoss, Pe; Perilite, Ve; Vermiculite, Rrh; Rotted rice-hull, RPt: Russian Peatmoss) were studied. For 'Casa Blanca', plant height and length of flower stalk increased when bulbs were planted in Pt:Rrh:Ve (1:1:1, v.v$^{-1}$ ), and dried leaves of lower part plants decreased in RPt:Pe:Rrh (1:1:1, v.v$^{-1}$ ). In case of 'Marco Polo', plant height and length of lower stalk increased in Pt:Rrh (1:1, v.v$^{-1}$ ) as compared to other treatment, number of leaves and dried leaves increased when bulbs were planted in RPt:Pe:Rrh (1:1:1, v.v$^{-1}$ ) as compared to the control. Flowering of 'Casa Blanca' increased in RPt:Pe:Rrh (1:1:1, v.v$^{-1}$ ) as compared to the control and that o 'Marco Polo' increased when bulbs planted in Pt:Rrh(1:1, v.v$^{-1}$ ). Flower-bud blasting of both cultivars increased with Pt as compared. Stem firmness of 'Casa Blanca' increased in Pt:Pe:Ve (1:1:1, v.v$^{-1}$ ), and especially stem firmness of upper part plant of 'Marco Polo' increased in Pt:Rrh (1:1, v.v$^{-1}$ ) as compared to the control. Generally, stem firmness of 'Casa Blanca' was not influenced by the culture medium.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.8
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• pp.3791-3794
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• 2012

CD44v, especially splice variants containing exon v6, has been shown to be related closely to development of different tumors. High levels of CD44v6/v7 have been reported to be associated with invasiveness and metastasis of many malignancies. The objective of this study was to detect expression of CD44v6-containing variants in patients with acute promyelocytic leukemia (APL) and evaluate the potential of CD44v6/v7 for risk stratification. Reverse transcription polymerase chain reaction (RT-PCR) followed by PCR product purification, ligation into T vectors and positive clone sequencing were used to detect CD44 v6-containing variant isoforms in 23 APL patients. Real-time quantitative PCR of the CD44v6/v7 gene was performed in patients with APL and in NB4 cells that were treated with all-trans retinoic acid (ATRA) or arsenic trioxide ($As_2O_3$). Sequencing results identified four isoforms (CD44v6/v7, CD44v6/v8/v10, CD44v6/v8/v9/v10, and CD44v6/v7/v8/v9/v10) in bone marrow mononuclear cells of 23 patients with APL. The level of CD44v6/v7 in high-risk cases was significantly higher than those with low-risk. Higher levels of CD44v6/v7 were found in three patients with central nervous system relapse than in other patients inthe same risk group. Furthermore, in contrast to ATRA, only $As_2O_3$ could significantly down-regulate CD44v6/v7 expression in NB4 cells. Our data suggest that CD44v6/v7 expression may be a prognostic indicator for APL.

• Journal of Astronomy and Space Sciences
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• v.26 no.2
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• pp.157-170
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• 2009

BVR observations for 52 standard stars were performed using the 1-m reflecter with 2K CCD System of Chungbuk National University Observatory (CBNUO) in 2008. We obtained 1,322 CCD images to establish a correlation between our bvr system and the standard Johnson-Cousins BVR system. We derived the tentative equations of transformation between then as follows; V = v-0.0303(B - V) + 0.0466 B - V = 1.3475(b - v) - 0.0251 V - R = 1.0641(v - r) - 0.0125 Using these equations the magnitudes in V, B-V, and V-R for 197 stars were obtained.

• Bulletin of the Korean Mathematical Society
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• v.32 no.2
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• pp.179-189
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• 1995

Let $V \subset R^n$ be a convex homogeneous cone which does not contain straight lines, so that the automorphism group $$ G = Aut(R^n, V)^\circ = { g \in GL(R^n) $\mid$ gV = V}^\circ $$ ($\circ$ denoting the identity component) acts transitively on V. A convex cone V is called "self-dual" if V coincides with its dual $$ (1.1) V' = { x' \in R^n $\mid$ < x, x' > > 0 for all x \in \bar{V} - {0}} $$ where $\bar{V}$ denotes the closure of V.sure of V.