• Progress in Superconductivity
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• 제12권1호
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• pp.36-40
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• 2010

We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.578-583
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• 1996

The magnetic properties have been investigated for the system of $Y_{1-x}$Yb$_{x}$Ba$_{2}$Cu$_{3}$F$_{y}$O$_{y}$ with x=0.0, 0.1, 0.2, 0.3, 0.4 and 0.5. In the magnetic hysteresis measurements, the values of the magnetic critical current densities are in the range of 10$^{4}$-10$^{5}$ A/cm$^{2}$ at the maximum external field 1.4 T. The upper critical field is over 100 T. The critical current density is estimated by the magnetization width .DELTA.M through the Bean critical state model. As the field strength is increased, the .DELTA.M diminishes slowly. The .DELTA.M for the fluorinated sample also decreases slowly with increasing field. It is considered that the large J, value results from this type is due to enhanced pinning center in grain boundary.y.ary.y.

• Journal of Magnetics
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• 제16권1호
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• pp.15-18
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• 2011

We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

• 한국초전도ㆍ저온공학회논문지
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• 제21권3호
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• pp.18-21
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• 2019

We studied the effect of Fe ion irradiation on the upper critical field ($H_{c2}$) of 410 nm single-crystalline $MgB_2$ thin films. The irradiation energy was fixed at 140 keV when we increased the irradiation doses from $1{\times}10^{14}ion/cm^2$ to $4{\times}10^{14}ion/cm^2$. We found that $H_{c2}$ significantly increase with increasing irradiation dose, despite the low irradiation energy. The enhancement of $H_{c2}$ could be explained by the reduction of electron mean free path caused by defects induced from irradiation, leading to a decrease of coherence length (${\xi}$). We also discussed the effect of irradiation on temperature-dependent resistivity in details.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.172-172
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• 2010

$MgB_2$ doped with $TiO_2$ was prepared by the in-situ solid state reaction to study the effects of $TiO_2$ dopant on the flux pinning behavior of $MgB_2$ superconductor. From the field-cooled and the zero-field-cooled temperature dependences of magnetization, the realms of vortex-glass and vortex-liquid states of $TiO_2$-doped $MgB_2$ were determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). The critical current density was estimated from the width of hysteresis loops in the framework of Beam's model at different temperatures. The results indicate that nano-scale $TiO_2$ inclusions play a role of the effective pinning centers and lead to the enhanced upper critical field and critical current density. It is suggested that the grain-boundary pinning mechanism is realized in $TiO_2$-doped $MgB_2$ superconductor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• 한국초전도ㆍ저온공학회논문지
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• 제20권1호
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• pp.1-10
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• 2018

The improvement of critical current properties of $REBa_2Cu_3O_{7-x}$ (REBCO) coated conductors by introducing artificial pinning centers (APCs) is examined with respect to the field-angle anisotropy, high-field performance and relaxation property with time. Nano-rods along the c-axis introduced by PLD method and isotropic nano-particles introduced by TFA-MOD method are treated. The theoretical analysis is also shown to understand the effect of APCs quantitatively. The effects of superconducting layer thickness that influences the high-field performance and relaxation property are also discussed. It is shown that the upper critical field, which is another important factor to determine the high-field property, can be improved by introduction of APCs through electron scattering at interfaces with the superconducting matrix. The optimum critical current property can be obtained by properly designing the morphology and number density of APCs and the superconducting layer thickness.

• 한국초전도ㆍ저온공학회논문지
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• 제16권4호
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• pp.31-35
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• 2014

The upper critical field ($H_{c2}$) was determined by applying a magnetic field along the ab plane and c axis for two single crystals of $BaFe_{2-x}Ru_xAs_2$ (x=0.48 and 0.75). The anisotropy of the $H_{c2}(0)$, ${\gamma}(0)=H_{c2}{^{ab}}(0)/H_{c2}{^c}(0)$, was ~1.6 for x=0.48 and ~2.3 for x=0.75. The angle-dependent resistance measured below $T_c$ allowed perfect scaling features based on anisotropic Ginzburg-Landau theory, leading to consistent anisotropy values. Because only one fitting parameter ${\gamma}$ is used in the scaling for each temperature, the validity of the ${\gamma}$ value was compared with that determined from ${\gamma}=H_{c2}{^{ab}}/H_{c2}{^c}$. The ${\gamma}$ obtained at a temperature close to $T_c$ was 3.0 and decreased to 2.0 at low temperatures. Comparing to the anisotropy determined for electron- or hole-doped $BaFe_2As_2$ using the same method, the present results point to consistent anisotropy in Ru-doped $BaFe_2As_2$ with other electron- or hole-doped $BaFe_2As_2$.

• 한국자기학회지
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• 제1권2호
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• pp.15-21
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• 1991

고온초전도체 $Y_{1}Ba_{2}Cu_{3-x}Sn_{x}O_{7-y}$에서 Cu 대신에 Sn 을 치환하면서 이들의 조성변화에 따른 자기적 특성을 vibrating sample magnetometer(VSM)와 torque magnetometer를 이용 하여 측정하였다. Cu 대신에 Fe, Ni 등의 원소를 치환했을 때와는 달리 x=0.36 까지 되어도 초전도 전이온도가 90 K 이상을 나타냄을 알 수 있었다. 온도와 외부자기장에 따른 자기 모우먼트 측정을 통하여 각 조성에 따른 lower critical field ($H_{c1}(T)$)과 upper critical field ($H_{c2}(T)$)를 측정하였다. 이 결과를 이용해 $H_{c1}(0)$과 $H_{c2}(0)$를 계산했으며, 간섭길이 (${\varepsilon}_{0}$), 침투깊이 (${\lambda}_{0}$), Ginzburg-Landau 상수 k등을 얻을 수 있었으며, 시료의 flux pinning 효과도 확인할 수 있었다.