• 제목/요약/키워드: University Spin-off

검색결과 110건 처리시간 0.029초

Organic TFT fabricated on ultra-thin flexible plastic with a rigid glass support

  • Son, Young-Rae;Han, Seung-Hoon;Lee, Sun-Hee;Lee, Ki-Jung;Choi, Min-Hee;Choo, Dong-Joon;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.756-759
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    • 2007
  • We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

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기업내 임원의 자발적 이직에 관한 이론적 모형 (A Theoretical Model of Executive Voluntary Turnover)

  • 최동원
    • 디지털융복합연구
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    • 제19권8호
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    • pp.173-184
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    • 2021
  • 현대 조직에서 고위급 임원들의 이직이 점차 증가하고 있음에도, 대부분의 기존 연구들에서는 임원들의 비자발적 이직/퇴직의 함의에 대한 연구에 치중해있는 실정이다. 본 연구에서는 기존 연구의 한계를 탈피하기 위해, 조직원 이동과 창업자 연구에 기반하여 임원들의 자발적 이직에 관한 이론적 모형을 제언한다. 첫째, 최고경영자로 창업자가 된 경우 기존 기업에 부정적 영향을 줄 것이나, 두 기업이 협력적 관계가 형성될수록 부정적 관계는 줄어들 것이다. 둘째, 스핀오프의 경우 기존 기업에 긍정적 영향을 줄 것이나, 스핀오프 기업의 성과가 저조할수록 긍정적 관계는 약화될 것이다. 마지막으로, 경쟁사로 이직하는 경우에는 부정적, 협력사로 이직하는 경우에는 긍정적 영향을 기존 기업의 성과에 줄 것이다. 본 연구에서는 임원들의 자발적 이직이 기존 기업의 성과에 미치는 영향력이 임원들의 향후 활동 양태에 따라 달라질 것이라 주장한다.

열처리에 따른 Peroxo Titanium Complex 졸 용액 기반 TiN/TiO2/FTO Resistive Random-Access Memory의 전기적 특성 (Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment)

  • 임현민;이진호;김원진;오승환;서동혁;이동희;김륜나;김우병
    • 한국재료학회지
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    • 제32권9호
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    • pp.384-390
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    • 2022
  • A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

Organic transistor comprising a polymer gate insulator

  • Kang, Gi-Wook;Kang, Hee-Young;Ahn, Young-Joo;Lee, Nam-Heon;Lee, Mun-Jae;Lim, Jong-Tae;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.777-779
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    • 2002
  • We report the performance of pentacene-based organic thin film transistors (OTFT) with PMMA (polymethyl methacrylate) as the gate insulator which was spin-coated on the ITO (indium tin oxide) glass substrate which was used as the gate contact. The pentacene thin film was deposited on the PMMA film and then Au source/drain contacts were deposited through shadow mask. The pentacene film shows better molecular ordering on PMMA compared with $SiO_2$ of Si wafer. The devices exhibited the field effect mobility of ${\sim}0.004cm^2$/Vs and on/off current ratio of ${\sim}10^3$.

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Characteristics and Fabrication of Vertical Type Organic Light Emitting Transistors

  • Oh, Se-Young;Kim, Hee-Jeong;Lee, Ji-Young;Ryu, Seung-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1440-1442
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    • 2005
  • We have fabricated vertical type organic thin film transistors (OTFTs) using organic semiconductor materials such as F16CuPc, NTCDA, PTCDI C-8 and C60. The layers of OTFT were fabricated by vacuum evaporation technique and spin casting method onto the Indium Tin Oxide (ITO) coated glass. I-V characteristics and on-off ratios of the fabricated OTFTs were investigated. In addition, we have fabricated light emitting transistor using MEH-PPV and then investigated EL electroluminescent properties.

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The Effects of Hydrophobic Buffer Layer Without Losing Dielectric Property on Organic Transistors

  • Song, June-Yong;Jung, Jae-Il;Choi, Yoon-Seuk;Kim, Hak-Rin;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.737-740
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    • 2007
  • The buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. this functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the dielectric layer. With the help of proposed hydrophobic layer, the transistor showed dramatic improvement at electrical performance which was almost 20 times higher mobility compared to the non-treated case. And on/off ratio was also guaranteed as $10^{5{\sim}6}$.

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Electrical Characteristics of Bottom-Contact Organic Thin-Film-Transistors Inserting Adhesion Layer Fabricated by Vapor Deposition Polymerization and Ti Adhesion Metal Layer

  • Park, Il-Houng;Hyung, Gun-Woo;Choi, Hak-Bum;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.958-961
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    • 2007
  • The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

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대학 기술이전.사업화 전담조직 운영제도의 성과와 과제 (A Study on the Management System of Special Organization for University Technology Transfer and Commercialization)

  • 윤종민
    • 기술혁신학회지
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    • 제16권4호
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    • pp.1055-1089
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    • 2013
  • 오늘날 대학의 주요 임무 중의 하나가 산학연 협력 및 교류를 통한 사회적기여 활동이다. 특히 보유기술의 이전 및 사업화를 통한 산업발전의 지원과 이를 통한 수익창출 활동은 대학의 중요한 사명으로서 인식되고 있다. 이와 같은 대학 연구 성과의 확산 및 산학연 협력의 주요 수단이 기술이전 사업화 전담조직을 설치 운영하는 것이며, 우리나라는 2000년대 이후 관련 정책을 본격 추진해나가고 있다. 그러나 제도운영의 역사와 경험이 아직 충분하지 못하고, 일부 제도상의 문제점들도 제기되는 등 아직은 활성화되지 못하고 있는 것으로 평가되고 있다. 이에 본 논문은 우리나라 대학의 기술이전 사업화 전담조직 운영에 관한 제도의 발전 및 그동안의 성과를 분석하고, 현행 운영제도상 제기되는 몇 가지 법제도적 문제점들을 검토하여 발전적인 개선방안을 제시해보고자 한다.

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Stress analysis of a postbuckled laminated composite plate

  • Chai, Gin-Boay;Chou, Siaw Meng;Ho, Chee-Leong
    • Structural Engineering and Mechanics
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    • 제7권4호
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    • pp.377-386
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    • 1999
  • The stress distribution in a symmetrically laminated composite plate subjected to in-plane compression are evaluated using finite element analysis. Six different finite element models are created for the study of stresses in the plate after buckling. Two finite element modelling approaches are adopted to obtain the stress distribution. The first approach starts with a full model of shell elements from which sub-models of solid elements are spin-off The second approach adopts a full model of solid elements at the beginning from which sub-models of solid elements are created. All sub-models have either 1-element thickness or 14-element thickness. Both techniques show high interlaminar direct and shear stresses at the free edges. The study also provides vital information of the distribution of all components of stresses along the unloaded edges in length direction and also in the thickness direction of the plate.

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

  • Senthilkumar, V.;Kim, Yong Soo
    • Transactions on Electrical and Electronic Materials
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    • 제16권5호
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    • pp.290-292
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    • 2015
  • We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (105 cycles without degradation) and long retention time (5 × 103 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.