• Title/Summary/Keyword: Uniform flatness

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Development of Uniform Press for Wafer Bonder (웨이퍼 본딩 장비용 Uniform Press 개발)

  • Lee, Chang-Woo;Ha, Tae-Ho;Lee, Jae-Hak;Kim, Seung-Man;Kim, Yong-Jin;Kim, Dong-Hoon
    • Transactions of the KSME C: Technology and Education
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    • v.3 no.4
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    • pp.265-271
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    • 2015
  • The bonding process should be achieved in vacuum environment to avoid air bubble. In this study, we studied about pressure uniformity that became an issue in thermo compression bonding usually. Uniform press is realized by the method that use air spring and metal form spring. The concept of uniform press using air spring is removed except pressing direction in the press processing so angle between the vector of pressure surface and the pressure axis is parallel automatically. Air spring compensate the errors of machining and assembly. Metal form compensate the thermal deformation and flatness error.

Profile Simulation in Mono-crystalline Silicon Wafer Grinding (실리콘 웨이퍼 연삭의 형상 시뮬레이션)

  • Kim Sang Chul;Lee Sang Jik;Jeong Hae Do;Choi Heon Zong;Lee Seok Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.10
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    • pp.26-33
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    • 2004
  • Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

Profile Simulation in Mono-crystalline Silicon Wafer Grinding (실리콘 웨이퍼 연삭의 형상 시뮬레이션)

  • 김상철;이상직;정해도;최헌종;이석우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.98-101
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    • 2003
  • As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

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Fabrication of SOl Structures For MEMS Application (초소형정밀기계용 SOl구조의 제작)

  • Chung, Gwiy-Sang;Kang, Kyung-Doo;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.301-306
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    • 2000
  • This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

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Fabrication of Ultra-smooth 10 nm Silver Films without Wetting Layer

  • Devaraj, Vasanthan;Lee, Jongmin;Baek, Jongseo;Lee, Donghan
    • Applied Science and Convergence Technology
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    • v.25 no.2
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    • pp.32-35
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    • 2016
  • Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

Influence of the airgap tolerance on performance of a Linear Induction Motor (공극 공차가 선형유도전동기에 미치는 영향)

  • Lee, H.W.;Lee, S.G.;Park, C.;Kwon, S.Y.;Lee, B.S.;Lee, Ju;Park, H.J.
    • Proceedings of the KSR Conference
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    • 2009.05a
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    • pp.1468-1472
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    • 2009
  • This paper presents the influence of the airgap tolerance on performance of a linear induction motor. Construction tolerance of the plate affects directly to the cost and performance of the Linear metro. LIM has around 10[mm] large airgap with many restrictions such as construction tolerance, thermal expansion and bend of the reaction plate, abrasion of the wheel, and so on. In order to have steady performance, the airgap should be uniform. But it is impossible to maintain the secondary reaction plate be flat along with the long track. Therefore the influence of the flatness on performance of a LIM should be investigated.

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Fabrication of SDB SOI structure with sealed cavity (Cavity를 갖는 SDB SOI 구조의 제작)

  • 강경두;정수태;주병권;정재훈;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.557-560
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    • 2000
  • Combination of SDB(Si-wafer Direct Bonding) and electrochemical etch-stop in TMAH anisotropic etchant can be used to create a variety of MEMS(Micro Electro Mechanical System). Especially, fabrication of SDB SOI structures using electrochemical etch-stop is accurate method to fabrication of 3D(three-dimensional) microstructures. This paper describes on the fabrication of SDB SOI structures with sealed cavity for MEMS applications and thickness control of active layer on the SDB SOI structure by electrochemical etch-stop. The flatness of fabricated SDB SOI structure is very uniform and can be improved by addition of TMAH to IPA and pyrazine.

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The Fabrication of a SDB SOI Substrate by Electrochemical Etch-stop (전기화학적 식각정지에 의한 SDB SOI기판의 제작)

  • 정귀상;강경두
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.431-436
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    • 2000
  • This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM respectively.

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The Characteristics of Frictional Behavior, Wear and Corrosion Resistance of Textured TiN Coated Layer (TiN 코팅층 집합조직의 변화에 따른 마찰, 마멸과 내부식 특성)

  • 김희동;김인수;성동영;이민구
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.05a
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    • pp.99-104
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    • 2003
  • TiN coated films show a good mechanical properties, high thermal properties and wear, erosion and corrosion resistance and are widely used as a coating materials in tools, ornaments, parts and semiconductors. In spite of these good properties, the fracture of TiN coated films occur during use. The fracture of TiN thin films is related to their microstructure. Especially, the life of TiN coated layer is related to the texture of the TiN films. One researcher suggested that the corrosion and erosion resistance of the TiN thin films is related to a uniform and dense structure of films. In this study, we studied the relationships between textures and friction coefficient, erosion and corrosion in TiN coated films. The flatness of (115) texture surface of TiN thin films is flatter than that of (111) texture surface. The friction coefficient of (115) texture surface of TiN thin films is similar with that of (111) texture surface. The wear resistance of (115) texture surface of TiN thin films is better than that of (111) texture surface. The erosion and corrosion resistance of (115) texture surface of TiN thin films is better than that of (111) torture surface. As well as texture, the wear, erosion and corrosion of TiN thin films has to consider defects such as pinholes, cracks, surface roughness and open columnar structure. The life of TiN coated products is influenced by the properties of wear, erosion, and corrosion resistance of TiN thin films and is related to texture of TiN coated films, density of pinholes and cracks, density of structure, and surface flatness.

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A Study on Aesthetic Beauty Consciousness of Contemporary Fashion in Korea (한국(韓國)패션에 나타난 미의식(美意識))

  • Cho, Kyu-Hwa
    • Journal of Fashion Business
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    • v.1 no.2
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    • pp.1-19
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    • 1997
  • This thesis is a reflection of Korean aestheticism and how it has evolved and influenced Korean contemporary fashion throughout the last century. Up to the current, there have been five notable trends of fashion that have been influenced from and have reflected the qualities emblematic of various periods in Korean history. They can be characterized as the era of Missionary fashion, Uniform fashion, Salon fashion, Brand Name Fashion, and finally, fashion from the current era of diversification. The specific characteristics of each fashion era have been analized and illustrated in a comprehensive table. Design characteristics of Korean contemporary fashion are as follows : 1. A point of emphasis is given to facial feature, unconstructive design and ample silhouette and A silhouette, two-piece and pants. Korean style wrap skirt, a smooth curve and layered style. 2. Effect of flatness from material; as methods of quilting, reinforced dual stitching(Kaeki), patchwork, embroidery and goldfoil thread extra, it is turned up that texture of cloth stuff and effects of flatness. 3. Simple color combinations give effects in two different directions For instance, white and a variety of vivid colors, a dull color and bright colors, black, blue. 4. Over-design, diffusion of fashion. Based on the design characteristics described above, the essence of Korea's beauty consciousness can be captured and summarized through the following points: 1. Emotionalism and non-characterism: traditional and simple natural beauty and modernized natural beauty. 2. From authoritism to non-authoritism: traditional and formal personal beauty and casual characteristic beauty. 3. Polaris (antithesis) phenomenon: chastic beauty and ostentatious beauty, simplicity and lavishness, conformity of fashion and originality. Although the beauty consciousness of Korean contemporary fashion is changing from traditional passive metaphor to aesthetic expressionism for the new generation, after all the basic foundation or root of the spiritual beauty of idealism is usually recognized by focusing on the face.

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