• 제목/요약/키워드: Uniform flatness

검색결과 31건 처리시간 0.025초

Susceptor design by numerical analysis in horizontal CVD reactor

  • Lee, Jung-Hun;Yoo, Jin-Bok;Bae, So-Ik
    • 한국결정성장학회지
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    • 제15권4호
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    • pp.135-140
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    • 2005
  • Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

U-FLATNESS AND NON-EXPANSIVE MAPPINGS IN BANACH SPACES

  • Gao, Ji;Saejung, Satit
    • 대한수학회지
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    • 제54권2호
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    • pp.493-506
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    • 2017
  • In this paper, we define the modulus of n-dimensional U-flatness as the determinant of an $(n+1){\times}(n+1)$ matrix. The properties of the modulus are investigated and the relationships between this modulus and other geometric parameters of Banach spaces are studied. Some results on fixed point theory for non-expansive mappings and normal structure in Banach spaces are obtained.

판재의 편평도 향상을 위한 교차압연에 관한 연구 (A Study on the Cross Rolling for Improvement of Flatness of Plate)

  • 남경오;서기석;노병래;홍성인
    • 소성∙가공
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    • 제14권1호
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    • pp.43-48
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    • 2005
  • The production of metal strip with uniform thickness and flatness are two important problems associated thin strip rolling. The thickness and flatness of strip are affected by the flattening of contact surface between strip and roll, the elastic recovery and the bending of roll. Especially, the flatness of the strip is greatly affected by bending deflection of roll. The roll must be designed considered the elastic deformation of roll. This study describes the measurement of thickness and flatness of strip and shows the crown roll for producing flat strip. But it is difficult to produce the crown roller. The cross rolling that is a simple method which can produce the flat strip is introduced and it is found the optimal cross angle for improvement of flatness of plate. These problems are solved by the MARC code on the basis of elastic-plastic material and the updated Lagrangian formulation.

가스흐름 제어에 의한 균일한 다결정 3C-SiC 박막 성장 (The uniform polycrystalline 3C-SiC thin film growth by the gas flow control)

  • 윤규형;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.92-92
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    • 2008
  • The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS(Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 5 slm Ar as the main flow gas. According to the location of geometric structure, surface fringes and flatness changed. It shows the distribution of thickness is formed uniformly in the specific location of the geometric structure.

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CVD에 의한 균일한 다결정 3C-SiC 박막 결정 성장 (Crystal growth of uniform 3C-SiC thin films by CVD)

  • 윤규형;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.234-235
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    • 2008
  • The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS (Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 1~10 slm Ar as the main flow gas. According to the increase of main carrier gas, surface fringes and flatness are improved. It shows the distribution of thickness is formed uniformly.

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차체 외판의 제작을 위한 다이페이스 설계에 있어서 제품 성형방향의 최적화 (Optimization of Product's Tipping Position in Designing Die Face for Manufacturing Automobile Outer Panels)

  • 박종천;조경호;이건우
    • 대한기계학회논문집
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    • 제17권6호
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    • pp.1389-1403
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    • 1993
  • 본 논문에서는 초기 변형소재가 이미 결정된 상태에서 제품의 최적 성형 방향 을 구하는 방법을 기술하였다. 초기 변형소재는 블랭크 호울더 곡면에 의해 변형된 중간 단면들에서의 형상을 에너지 최소화 개념을 적용하여 스플라인 곡선으로 나타내 고 이것들로 부터 곡선망을 구성한 후 최종적으로 양방향 스키닝기법(bi-directional skinning technique)에 의해 구현 하였다.

전기화학적 식각정지에 의해 제조된 SDB SOI기판의 평탄도 (Flatness of a SOB SOI Substrate Fabricated by Electrochemical Etch-stop)

  • 정귀상;강경두
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.126-129
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    • 2000
  • This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point, the passivation potential (PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

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집적도를 높인 평면형 가스감지소자 어레이 제작기술 (New Fabrication method of Planar Micro Gas Sesnor Array)

  • 정완영
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.727-730
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    • 2003
  • Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

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자성체 피복형 연마입자를 이용한 유리의 평면 래핑의 기초 연구 (Fundamental Research on Polishing of Glass Plates by Coated-type Magnetic Abrasives)

  • 문봉호
    • 한국기계가공학회지
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    • 제10권3호
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    • pp.108-112
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    • 2011
  • In order to obtain excellent flatness and surface roughness of glass substrate disk, uniform distribution of abrasives should be important for uniform polishing. We introduced coated-type magnetic abrasives and magnetic field to a lapping for the improvement of surface roughness and removal rate. Polishing properties with the conventional diamond abrasives and the coated-type magnetic abrasives were compared. As a result, the coated-type magnetic abrasives showed small surface roughness and large removal rate by applying magnetic field. And it also was shown that coated-type magnetic abrasives could save the more amount of polishing liquid under the same removal rate than the conventional diamond abrasives can.

수용성 UV경화성 수지를 이용한 고품질 PDP용 격벽제작 기술 개발 (Development of High-definition PDP(Plasma Display Panel) Barrier Ribs Using Watersoluble UV-curing Resin)

  • 남수용;우진호;이미영;이갑희;김광영
    • 한국인쇄학회지
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    • 제21권2호
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    • pp.67-74
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    • 2003
  • Barrier ribs for PDP(plasma display panel) are commonly utilized to have uniform height and width and to prevent opical crosstalk between adjacent cells. The requirements for such barrier ribs are uniform height and shape, low outgassing rate and low porosity, high aspect ratio, and fine resolution. In this study, we are studied about that to make efficiency of material and high quality barrier ribs for PDP. As a result, could got high barrier ribs of $140{\mu}m$ evenly in 1th phenomenon using watersoluble UV curing resin and know that flatness of upper part is also very good.

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