• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.116-117
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• 2007

The $V_2O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_2O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_2O_5$ thin films annealed at $300^{\circ}C$ were about -2.65%/K.

• Journal of the Optical Society of Korea
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• v.8 no.4
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• pp.174-181
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• 2004

Various kinds of systems, that can do target recognition and position detection simultaneously by using infrared sensing detectors, have been developed. In this paper, the detection system TRSS (Thermal target Recognition by Spiral Scanning) adopts linear array shaped uncooled IR detector and uses spiral type fast scanning method for relative position detection of target objects, which radiate an IR region wavelength spectrum. It can detect thermal energy radiating from a 9 m-size target object as far as 200 m distance. And the maximum field of a detector is fully filled with the same size of target object at the minimum approaching distance 50 m. We investigate two types of lens systems. One is a singlet lens and the other is a doublet lens system. Every system includes one aspheric surface and free positioned aperture stop. Many designs of F/1.5 system with ${\pm}5.2^{\circ}$ field at the Efl=20, 30 mm conditions for single element and double elements lens system respectively are compared in their resolution performance [MTF] according to the aspheric surface and stop position changing on their optimization process. Optimum design is established including mechanical boundary conditions and manufacturing considerations.

• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.369-376
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• 2003

We analyzed the aspheric and/or diffractive surface effects to the performance in the long wavelength infrared (8-12 $\mu$m). Also we investigated the dependence of the NA values for the fixed effective focal length 100 mm when the field angle was varied from 5 degrees to 30 degrees stepped by 5 degrees. We chose the merit function as a criteria to compare the performance of the different lenses. Based on the analysis of the aspheric and/or diffractive surface effects, we designed the optical system of F/l.0 for the uncooled thermal imaging system. As for detector the pixel size was 45 $\mu$m square and the number of pixels were a 320${\times}$240 pixels.

• Current Optics and Photonics
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• v.3 no.6
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• pp.502-509
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• 2019

Based on the typical pixel structure and parameters of a polysilicon uncooled bolometer, the absorption rate of a polysilicon microbridge infrared detector for 10.6 ㎛ laser energy was calculated through the optical admittance method, and the thermal coupling model of a polysilicon microbridge component irradiated by far infrared laser was established based on theoretical formulas. Then a numerical simulation study was carried out by means of finite element analysis for the actual working environment. It was found that the maximum temperature and maximum stress of the microbridge component are approximately exponentially changing with the laser power of the irradiation respectively and that they increase monotonically. The highest temperature zone of the model is gradually spread by the two corners of the bridge surface that are not connected to the bridge legs, and the maximum stress acts on both sides of the junction of the microbridge legs and the substrate. The mechanism of laser-induced hard damage to polysilicon detectors is the melting damage caused by high temperature. This paper lays the foundation for the subsequent study of the interference mechanism of the laser on working state polysilicon detectors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.27-37
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• 1999

A CMOS ReadOut Integrated Circuit (ROlC) for InfraRed Focal Plane Array (IRFPA) detector is presented, which is a key component in uncooled thermal imaging systems. The ROIC reads out signals from $64\times64$ Barium Strontium Titanate (BST) infrared detector array, then outputs pixel signals sequentially after amplifying and noise filtering. Various design requirements and constraints have been considered including impedance matching, low noise, low power dissipation and small detector pitch. For impedance matching between detector and pre~amplifier, a new circuit based on MOS diode structure is devised, which can be easily implemented using standard CMOS process. Also, tunable low pass filter with single~pole is used to suppress high frequency noise. In additions, a clamping circuit is adopted to enhance the signal~to-noise ratio of the readout output signals. The $64\times64$ IRFPA ROIC is designed using $0.65-\mu\textrm{m}$ 2P3M (double poly, tripple metal) N~Well CMOS process. The core part of the chip contains 62,000 devices including transistors, capacitors and resistors on an area of about $6.3-mm\times6.7-mm$.

• Korean Journal of Optics and Photonics
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• v.34 no.3
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• pp.106-116
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• 2023

In this paper, we designed a coaxial dual camera incorporating two optical systems-one for the visible rays and the other for far-infrared ones-with the aim of capturing images in both wavelength ranges. The far-infrared system, which uses an uncooled detector, has a sensor array of 640×480 pixels. The visible ray system has 1,945×1,097 pixels. The coaxial dual optical system was designed using a hot mirror beam splitter to minimize heat transfer caused by infrared rays in the visible ray optical system. The optimization process revealed that the final version of the dual camera system reached more than 90% of the fusion performance between two separate images from dual systems. Multiple rigorous testing processes confirmed that the coaxial dual camera we designed demonstrates meaningful design efficiency and improved image conformity degree compared to existing dual cameras.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.11
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• pp.36-43
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• 2015

A pixel-level readout circuit is studied for 2-dimensional microbolometer focal plane arrays (FPAs). A current mirroring injection (CMI) input circuit with 2-step current-mode bias suppression is proposed for a pixel-level architecture with high responsivity and long integration time. The proposed circuit has been designed using a $0.35-{\mu}m$ 2-poly 4-metal CMOS process for a $320{\times}240$ microbolometer array with a pixel size of $50{\mu}m{\times}50{\mu}m$. The proposed 2-step bias-current suppression has sufficiently low calibration error with wide calibration range, and the calibration range and error can be easily optimized by controlling some design parameters. Due to high responsivity and a long integration time of more than 1 ms, the noise equivalent temperature difference (NETD) of the proposed circuit can be improved to 26 mK, which is much better than that of the conventional circuits, 67 mK.