• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.379-382
• /
• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.3
• /
• pp.19-23
• /
• 2003

Extended unbalanced magnetron sputtering system based on the cylindrical magnetron with a rotating cathode was developed. The unbalanced configuration of magnetic field was realized by means of additional lines of permanent magnets, placed along both sides of a 89 mm outer diameter and 600 mm long cylindrical cathode. The performance of the unbalanced magnetron was assessed in terms of the ion current density and the ion-to-atom ratio incident at the substrate. Furthermore, the paper presents the comparison of the internal plasma parameters, such as the electron temperature, electron density, plasma and floating potentials, measured by a Langmuir probe in various positions from the cathode, for conventional and unbalanced constructions of the cylindrical magnetron. The plasma density and ion current density are about 3-5 times higher than those of conventional one, in the unbalanced magnetron in a 0.24 Pa Ar atmosphere with a DC cathode power of 3 kW.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.10a
• /
• pp.116-116
• /
• 2003

• Journal of the Korean institute of surface engineering
• /
• v.40 no.5
• /
• pp.203-208
• /
• 2007

Preliminary studies were conducted to develop a dimensionally stable anode (DSA)electrode prepared by reactive sputtering method. The microstructure, surface morphology and electrochemical properties of iridium oxide $(IrO_2)$ coatings synthesized by unbalanced magnetron sputtering (UBMS) and conventional DSA electrode were compared. In addition, the possibilities of $IrO_2$ films synthesized by UMB on a real DSA electrode were investigated by electro-chemical application test. The degree of non-stoichiometry and surface area were closely related to the electro-chemical activity of the $IrO_2$ electrode. The feasibility of making a DSA electrode prepared by PVD technique was demonstrated through the present work.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.11a
• /
• pp.113-114
• /
• 2012

본 연구는 segment target을 사용하여 unbalanced magnetron sputtering을 활용하여 고 CrZr-Si-N 박막을 합성하고 박막의 미세구조 및 마모 특성을 연구하는데 그 목적이 있다. 박막의 Si 함량을 조절하기 위하여 각 segment target은 Cr,Zr을 일정vol% 유지하며 Si vol%만 변화하여 설계하였다. Si 함량별로 제작된 마모실험 시편의 미세구조는 XRD, FE-SEM, AFM, TEM을 통하여 분석하였으며, ball on disk type의 마모 시험기를 통해 그 마모 특성을 분석하였으며,

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.62 no.2
• /
• pp.284-287
• /
• 2013

In this work, we have fabricated TiC films by using unbalanced magnetron sputtering method with graphite and Ti targets for contact strip application of electric railway. TiC films were deposited with various substrate temperatures. We investigated various properties of TiC films prepared with various substrate temperatures, such as the hardness, surface roughness, friction coefficient, resistivity, FESEM (Field Emission Scanning Electron Microscopy), HRTEM (High Resolution Transmission Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy). The hardness and friction coefficient properties of TiC films were improved with increasing substrate temperature. These results indicate that the improvement of hardness and resistivity is related to the increase of sp2 clusters in TiC films. And also, the resistivity value of TiC films were decreased with increasing substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.7
• /
• pp.458-461
• /
• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.141-141
• /
• 2009

본 실험에서는 비평형 마그네트론 스퍼터링 (Unbalanced Magnetron Sputtering, UBMS)을 이용하여 제작된 ITO 박막의 전기적, 광학적, 구조적인 특성들에서 기판온도와 자장 변화의 영향에 대해 연구하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.10a
• /
• pp.163-164
• /
• 2009

dc unbalanced magnetron sputtering 방법으로 superhard quarternary Ti-B-C-N films을 합성하였다. XPS, XRD 분석 결과 Ti-B-C-N films은 solid-solution (Ti,C,N)$B_2$와 Ti(C,N) 결정이 amorphous BN에 분포된 나노 복합체를 형성하였다. 여기에서는 film내 N의 양에 따라 강도가 증가하다가 그 후 감소하는 경향을 보였다.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.3
• /
• pp.192-197
• /
• 2017

A 6-way-cross consisting of a 2.75-inch CF flange was used as a main chamber on a PFEIFFER VACUUM TMP station based on a 67 l / sec turbo molecular pump and a diaphragm pump to produce a magnet array with a volume ratio of 5.5: 1.A 1-inch diameter copper target and graphite target were fabricated using MDX-1.5K from Advanced Energy Industries, Inc as a DC power supply. Ion current density of copper target and graphite target was measured by unbalanced magnetron sputtering. The basic pressure condition was $6.3{\times}10^{-7}mbar$ and the process pressure was Ar 50 sccm at $1.0{\times}10^{-2}mbar$ (7.5 mTorr) in the Ar atmosphere. Therefore, the relative density of copper ions reaching the substrate with the measured ion current density was derived.