• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.329-332
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• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.237-240
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• 2016

The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.

• Microbiology and Biotechnology Letters
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• v.11 no.3
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• pp.155-161
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• 1983

The effects of ultraviolet light on bacteriophage f2 were investigated to determine the inactivation kinetics and its mechanism. The 260nm light showed a little higher inactivation rate than the one of 300 nm. In this work, our main concern was whether structural and/or conformational changes in the protein capsid could occur by UV irradiation. The inactivation for the first 20 minutes irradiation was rapid with a loss of about 4 logs and followed by a slower rate during the next 40 minutes with no survival noted in the samples irradiated for 90 minutes or longer. The structural change of the protein capsid was examined by optical spectroscopic techniques and electron microscopy. The absorption spectra of the UV irradiated phages showed no detectable differences in terms of the spectral shape and intensity from the control phage. However, the fluorescence emission spectroscopic data, i.e. 1) fluorescence quenching of tryptophan residues upon irradiation of 300 nm light, 2) enhancement of fluorescence emission of ANS (8-aniline-1-naphthalene sulfonate) bound to the intact phages compared to the one in the UV-treated phages, and 3) decrease of energy transfer efficiency from tryptophan to ANS in the UV-treated samples, presented remarkable differences between the intact and UV-treated phages. Such a structural alteration was also observed by electron microscopy The UV-treated phages appeared to be broken and empty capsids. Therefore, the inactivation of the bacteriophage f2 by UV irradiation is thought to be attributed to the structural change in the protein capsid as well as damage in the viral RNA by UV irradiation.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.807-810
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• 2002

$GdPO_4$:Tb phosphor particles with spherical shape and high photoluminescence were prepared by spray pyrolysis. The brightness of prepared $GdPO_4$:Tb under the vacuum ultraviolet(VUV) illumination was comparable with that of the commercial $Zn_2SiO_4$:Mn phosphor particles. The photoluminescence spectra of $GdPO_4$:Tb phosphor particles had maximum peak at 547 nm, and the sharp peaks at 480 nm, 580 nm, and 620 nm. The spherical morphology of prepared $GdPO_4$:Tb particles was completely maintained even after the posttreatment up to 1100 $^{\circ}C$. When the posttreatment temperature was over 1100 $^{\circ}C$, the particles did not have the spherical shape anymore. The average particle size of $GdPO_4$:Tb phosphor particles prepared by using $(NH_4)_2HPO_4$ was changed from 0.5 to 1.9 ${\mu}m$ and its effect on the PL intensity was investigated. It was found that the optimized $GdPO_4$:Tb particles have a good excitation spectrum comparable to that of the commercial $Zn_2SiO_4$:Mn phosphor particles under the VUV illumination from 140 to 220 nm. We concluded that the $GdPO_4$:Tb phosphor particles with spherical shape prepared by spray pyrolysis is a promising candidate for a green-emitting PDP phosphor.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• Atmosphere
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• v.21 no.1
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• pp.123-130
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• 2011

In this study, we have analyzed the radiative characteristics of erythemal ultraviolet-B (EUV-B from 1999 to 2005) over the Korean Peninsula. EUV-B measured at Gangneung, Anmyondo, Mokpo, and Gosan represents the measurements from clean areas and that at Seoul represents from a polluted area. The magnitudes of EUV-B increase in proportion to the latitudinal decrease. Monthly mean variation of EUV-B at noon shows the maximum value of $158.5mWm^{-2}$ in August and the minimum value of $36.4mWm^{-2}$ in December in the clean areas. Seasonal mean diurnal variation of EUV-B shows a peak around noon (12:00 ~ 13:00 hr) and its intensity varies along with a season in order of summer > spring > fall > winter. The maximum value of $56.4mWm^{-2}$ in summer is three times higher than that in winter ($14.3mWm^{-2}$). The value of EUV-B in the polluted area is lower than that in the clean areas, resulting from the effects of the blocking, reflection, and scattering of EUV-B due to high concentrations of PM10. UV-B is an essential element to synthesize vitamin D in human body. 200 IU(International Unite) of vitamin D can be formed by an exposure of 6-10% of body surface area to 0.5 MED(Minimal Erythemal Dose). In order to form vitamin D, the calculated exposure times to EUV-B are 15 min. in spring, 12 min. in summer, 18 min. in fall, and 37 min. in winter for the clean areas and 16, 16, 24, and 37 min. for the polluted area.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1205-1211
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• 2013

The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.53-58
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• 2013

Superhydrophobic $SiO_2$ layers with a micro-nano hierarchical surface structure were prepared. $SiO_2$ layers deposited via an electrospray method combined with a sol-gel chemical route were rough on the microscale. Au particles were decorated on the surface of the microscale-rough $SiO_2$ layers by use of the photo-reduction process with different intensities ($0.11-1.9mW/cm^2$) and illumination times (60-240 sec) of ultraviolet light. With the aid of nanoscale Au nanoparticles, this consequently resulted in a micro-nano hierarchical surface structure. Subsequent fluorination treatment with a solution containing trichloro(1H,2H,2H,2H-perfluorooctyl)silane fluorinated the hierarchical $SiO_2$ layers. The change in surface roughness factor was in good agreement with that observed for the water contact angle, where the surface roughness factor developed as a measure needed to evaluate the degree of surface roughness. The resulting $SiO_2$ layers revealed excellent repellency toward various liquid droplets with different surface tensions ranging from 46 to 72.3 mN/m. Especially, the micro-nano hierarchical surface created at an illumination intensity of $0.11mW/cm^2$ and illumination time of 60 sec showed the largest water contact angle of $170^{\circ}$. Based on the Cassie-Baxter and Young-Dupre equations, the surface fraction and work of adhesion for the micronano hierarchical $SiO_2$ layers were evaluated. The work of adhesion was estimated to be less than $3{\times}10^{-3}N/m$ for all the liquid droplets. This exceptionally small work of adhesion is likely to be responsible for the strong repellency of the liquids to the micro-nano hierarchical $SiO_2$ layers.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1589-1595
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• 2010

In order to effective degradation of organic dye both under visible light or ultrasonic irradiation, the MWCNTs (multiwalled carbon nanotube) deposited with Fe and $TiO_2$ were prepared by a modified sol-gel method. The Fe/$TiO_2$-MWCNT catalyst was characterized by surface area of BET, scanning electron microscope (SEM), Transmission Electron Microscope (TEM), X-ray diffraction (XRD), and energy dispersive X-ray (EDX) and ultraviolet-visible (UV-vis) spectroscopy. The low intensity visible light and low power ultrasound was as an irradiation source and the methylene blue (MB) was choose as the model organic dye. Then degradation experiments were carried out in present of undoped $TiO_2$, Fe/$TiO_2$ and Fe/$TiO_2$-MWCNT catalysts. Through the degradation of MB solution, the results showed the feasible and potential use of Fe/$TiO_2$-MWCNT catalyst under visible light and ultrasonic irradiation due to the enhanced formation of reactive radicals as well as the possible visible light and the increase of ultrasound-induced active surface area of the catalyst. After addition of $H_2O_2$, the MB degradation rates have been accelerated, especially with Fe/$TiO_2$-MWCNT catalyst, in case of that the photo-Fenton reaction occurred. The sonophotocatalysis was always faster than the respective individual processes due to the more formation of reactive radicals as well as the increase of the active surface area of Fe/$TiO_2$-MWCNT catalyst.