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http://dx.doi.org/10.5012/bkcs.2013.34.4.1205

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method  

Kim, Soaram (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Nam, Giwoong (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Park, Hyunggil (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Yoon, Hyunsik (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Lee, Sang-Heon (School of Chemical Engineering, Yeungnam University)
Kim, Jong Su (Department of Physics, Yeungnam University)
Kim, Jin Soo (Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University)
Kim, Do Yeob (Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University)
Kim, Sung-O (Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University)
Leem, Jae-Young (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Publication Information
Bulletin of the Korean Chemical Society / v.34, no.4, 2013 , pp. 1205-1211 More about this Journal
Abstract
The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.
Keywords
Zinc oxide; Doping; Hydrothermal; Photoluminescence; Transmittance;
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1 Heller, R. B.; McGannon, J.; Weber, A. H. J. Appl. Phys. 1950, 21, 1283.   DOI
2 Nam, G.; Kim, S.; Kim, M. S.; Yim, K. G.; Kim, D. Y.; Kim, S.-O.; Leem, J.-Y. J. Korean Phys. Soc. 2011, 59, 129.   DOI   ScienceOn
3 Jeon, J.-W.; Kim, M.; Jang, L.-W.; Hoffman, J. L.; Kim, N. S.; Lee, I.-H. Electron. Mater. Lett. 2012, 8, 27.   DOI   ScienceOn
4 Kim, M. S.; Yim, K. G.; Kim, S.; Nam, G.; Lee, D.-Y.; Kim, J. S.; Kim, J. S.; Leem, J.-Y. J. Korean Phys. Soc. 2011, 59, 2354.   DOI   ScienceOn
5 Kim, M. S.; Yim, K. G.; Lee, D.-Y.; Kim, J. S.; Kim, J. S.; Leem, J.-Y. J. Korean Phys. Soc. 2011, 58, 821.   DOI   ScienceOn
6 Liao, Z.-M.; Zhang, H.-Z.; Zhou, Y.-B.; Xu, J. Zhang, J.-M.; Yu, D.-P. Phys. Lett. A 2008, 372, 4505.   DOI   ScienceOn
7 Djurisic, A. B.; Leung, Y. H.; Tam, K. H.; Ding, L.; Ge, W. K.; Chen, H. Y.; Gwo, S. Appl. Phys. Lett. 2006, 88, 103107.   DOI   ScienceOn
8 Kim, M. S.; Yim, K. G.; Kim, S.; Nam, G.; Lee, D.-Y.; Kim, J. S.; Kim, J. S.; Leem, J.-Y. Acta Phys. Pol. A 2012, 121, 217.
9 Mulvaney, P. Langmuir 1996, 12, 788.   DOI   ScienceOn
10 Barnes, W. L.; Dereux, A.; Ebbesen, T. W. Nature, 2003, 424, 824.   DOI   ScienceOn
11 Jain, A.; Sagar, P.; Mehra, R. M. Solid-State Electron. 2006, 50, 1420.   DOI   ScienceOn
12 Kim, M. S.; Kim, T. H.; Kim, D. Y.; Kim, S.-O.; Lee, D.-Y.; Kim, J. S.; Kim, J. S.; Son, J.-S.; Leem, J.-Y. J. Korean Phys. Soc. 2012, 60, 830.   DOI   ScienceOn
13 Kim, D.; Yun, I.; Kim, H. Curr. Appl. Phys. 2010, 10, S459.   DOI   ScienceOn
14 Tubtimtae, A.; Lee, M.-W. Superlattices. Microstruct. 2012, 52, 987.   DOI
15 Yang, H.; Lee, J.-S.; Bae, S.; Hwang, J. H. Curr. Appl. Phys. 2009, 9, 797.   DOI   ScienceOn
16 Fang, T.-H.; Kang, S.-H. J. Phys. D: Appl. Phys. 2008, 41, 245303.   DOI   ScienceOn
17 Kim, S.; Kim, M. S.; Nam, G.; Lee, J.-Y. Electron. Mater. Lett. 2012, 8, 445.   DOI   ScienceOn
18 He, H. P.; Tang, H. P.; Ye, Z. Z.; Zhu, L. P.; Zhao, B. H.; Wang, L.; Li, X. H. Appl. Phys. Lett. 2007, 90, 023104.   DOI   ScienceOn
19 Zhu, L.; Li, J.; Ye, Z.; He, H.; Chen, X.; Zhao, B. Opt. Mater. 2008, 31, 237.   DOI   ScienceOn
20 Nayak, P. K.; Yang, J.; Kim, J.; Chung, S.; Jeong, J.; Lee, C.; Hong, Y. J. Phys. D: Appl. Phys. 2009, 42, 035102.   DOI   ScienceOn
21 Morales, A. E.; Zaldivar, M. H.; Pal, U. Opt. Mater, 2006, 29, 100.   DOI   ScienceOn
22 Fang, T.-H.; Kang, S.-H. Curr. Appl. Phys. 2010, 10, 1076.   DOI   ScienceOn
23 Chien, F. S.-S.; Wang, C.-R.; Chan, Y.-L.; Lin, H.-L. Sens. Actuators B 2010, 144, 120.   DOI   ScienceOn
24 Oh, S.; Jung, M.; Koo, J.; Cho, Y.; Choi, S.; Yi, S.; Kil, G.; Chang, J. Physica E 2010, 42, 2285.   DOI   ScienceOn
25 Cho, M. Y.; Kim, M. S.; Choi, H. Y.; Yim, K. G.; Leem, J.-Y. Bull. Korean Chem. Soc. 2011, 32, 880.   DOI   ScienceOn
26 Kim, D. Y.; Kim, S.-O.; Kim, M. S.; Yim, K. G.; Kim, S.; Nam, G.; Lee, D.-Y.; Leem, J.-Y. J. Korean Phys. Soc. 2012, 60, 94.   DOI   ScienceOn
27 Sim, K. U.; Shin, S. W.; Moholkar, A. V.; Yun, J. H.; Moon, J. H.; Kim, J. H. Curr. Appl. Phys. 2010, 10, S463.   DOI   ScienceOn
28 Tian, Z.; Voigt, J. A.; Liu, J.; Mckenzie, B.; Mcdermott, M. J.; Rodriguez, M. A.; Konishi, H.; Xu, H. Nat. Mater. 2003, 2, 821.   DOI   ScienceOn
29 Nunes, P.; Fortunato, E.; Tonello, P.; Fernandes, F. B.; Vilarinho, P.; Martins, R. Vacuum 2002, 64, 281.   DOI   ScienceOn
30 Hong, C.-S.; Park, H.-H.; Moon, J.; Park, H.-H. Thin Solid Films 2006, 515, 957.   DOI   ScienceOn
31 Ramalingam, R. J.; Chung, G. S. Mater. Lett. 2012, 68, 247.   DOI   ScienceOn
32 Yim K. G.; Jeon, S. M.; Kim, M. S.; Kim, S.; Nam, G.; Lee, D.-Y.; Kim, J. S.; Kim, J. S.; Leem, J.-Y. Acta Phys. Pol. A 2012, 121, 214.
33 Kim, M. S.; Yim, K. G.; Choi, H. Y.; Cho, M. Y.; Kim, G. S.; Jeon, S. M.; Lee, D.-Y.; Kim, J. S.; Son, J.-S.; Lee, J. I.; Leem, J.-Y. J. Cryst. Growth 2011, 326, 195.   DOI   ScienceOn
34 Kim, M. S.; Yim, K. G.; Kim, D. Y.; Kim S.; Nam, G.; Lee, D.-Y.; Kim, S.-O.; Kim, J. S.; Kim, J. S.; Son, J.-S.; Leem, J.-Y. Electron. Mater. Lett. 2012, 8, 75.   DOI   ScienceOn
35 Kim, M. S.; Yim, K. G.; Cho, M. Y.; Kim, S.; Nam, G.; Lee, D.-Y.; Kim, J. S.; Kim, J. S.; Son, J.-S.; Lee, J. I.; Leem, J.-Y. AIP Conf. Proc. 2011, 1400, 443.
36 Baruah, S.; Dutta, J. Sci. Technol. Adv. Mater. 2009, 10, 013001.   DOI   ScienceOn
37 Li, W.-J.; Shi, E.-W.; Zhong, W.-Z.; Yin, Z.-W. J. Cryst. Growth 2009, 203, 186.
38 Willander, M.; Nur, O.; Zhao, Q. X.; Yang, L. L.; Lorenz, M.; Cao, B. Q.; Pérez, J. Z.; Czekalla, C.; Zimmermann, G.; Grundmann, M.; Bakin, A.; Behrends, A.; Suleiman, M. A.; Shaer, A. E.; Mofor, A. C.; Postels, B.; Waag, A.; Boukos, N.; Trvalos, A.; Kwack, H. S.; Guinard, J.; Dang, D. L. S. Nanotechnology 2009, 20, 332001.   DOI   ScienceOn
39 Guo, H.; Zhou, J.; Lin, Z. Electrochem. Commun. 2008, 10, 146.   DOI   ScienceOn
40 Chu, S.; Olmedo, M.; Yang, Z.; Kong, J.; Liu, J. Appl. Phys. Lett. 2008, 93, 1811106.
41 Zhu, Y. W.; Zhang, H. Z.; Sun, X. C.; Feng, S. Q.; Xu, J.; Zhao, Q.; Xiang, B.; Wang, R. M.; Yu, D. P. Appl. Phys. Lett. 2003, 83, 144.   DOI   ScienceOn
42 Fan, Z.; Lu, J. G. Appl. Phys. Lett. 2005, 86, 123510.   DOI   ScienceOn