• Korean Journal of Materials Research
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• v.18 no.8
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• pp.432-437
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• 2008

Titanium oxide films and powders are attached onto carbon cloths via RF reactive sputtering and an epoxy resin mixture, respectively. $TiO_2$/carbon composite materials were used to investigate the photoelectrochemical degradation of perchlorate ions in water. The energy band gaps of the RF-sputtered $TiO_2$ thin films ranged from 3.35-3.44 eV. A photocurrent of the powdered $TiO_2$ as illuminated by ultra-violet light for 30 min. was $2.79\;mA/cm^2$. Perchlorate ions in water were shown to be degradable by a UV-illuminated $TiO_2$ powder/carbon/Nafion/carbon composite.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.915-918
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• 2007

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.6
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• pp.959-964
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• 2009

This paper dealt with the disinfection performance by Ultra-Violet Light Emitting Diode (UV LED) for a phytoplankton as a basic study for the development of a low-energy consumption ballast water treatment system. UV LEDs having peak wavelength of 255nm, 265nm and 280nm were used in the experiment. UV LED modules with driving circuit were fabricated, and optical and electrical characteristics of them were analyzed. The disinfection performance for phytoplankton depending on the UV wavelength was evaluated by comparing the number of phytoplankton before and after the UV treatments. The experimental result showed that the highest disinfection wavelength for the phytoplankton was 265nm.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.73-80
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• 2013

In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 ${\mu}m$ diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.

• Composites Research
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• v.30 no.1
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• pp.7-14
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• 2017

In this paper, the inter-lamina shear strength (ILSS) of multi-wall carbon nanotube (MWNT) reinforced carbon fiber reinforced plastics (CFRP) and thin-ply composites were verified under low earth orbit (LEO) space environment. CFRP, MWNT reinforced CFRP, thin-ply CFRP and MWNT reinforced thin-ply CFRP were tested after aging by using accelerated ground simulation equipment. The used ground simulation equipment can simulate high vacuum ($2.5{\times}10^{-6}torr$), atomic oxygen (AO, $9.15{\times}10^{14}atoms/cm^2{\cdot}s$), ultraviolet light (UV, 200 nm wave length) and thermal cycling ($-70{\sim}100^{\circ}C$) simultaneously. The duration of aging experiment was twenty hours, which is an equivalent duration to that of STS-4 space shuttle condition. After the aging experiment, ILSS were measured at room temperature ($27^{\circ}C$), high temperature ($100^{\circ}C$) and low temperature ($-100^{\circ}C$) to verify the effect of operation temperature. The MWNT and thin-ply shows good improvement of ILSS at ground condition especially with the thin-ply. And after LEO exposure large degradation of ILSS was observed at MWNT added composite due to the thermal cycle. And the degradation rate was much higher under the high temperature condition. But, at the low temperature condition, the ILSS was largely recovered due to the matrix toughening effect.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.1-87.1
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• 2012

넓은 밴드갭 (3.37eV)과 높은 엑시톤 결합에너지 (60meV)를 가지는 ZnO 물질은 ultra violet light 센서 및 light emitting diode (LED)의 재료로써 많은 연구가 진행되고 있다. 특히 나노와이어 구조를 이용하여 소자를 만들 경우 양자효과와 1차원적 캐리어 수송경로 효과로 인하여 그 특성을 보다 향상 시킬 수 있다. 나노와이어를 이용한 이종접합 p-n 다이오드를 제작하기 위하여 ZnO와 격자상수가 비슷한 GaN, NiO, CoO와 같은 물질들이 나노구조 접합에 많이 쓰이고 있지만, 격자상수 차이로 인해서 접합부분 캐리어 수송효율이 떨어지는 단점을 가지고 있다. n-type과 p-type ZnO를 만들어 동종 접합을 만들 경우 이러한 문제점을 극복할 수 있지만, 도핑되지 않은 ZnO가 n-type을 특성을 나타내기 때문에 안정적인 p-type ZnO 합성에 대한 연구가 필수적이다. 본 연구에서는 안정적인 p-type ZnO 합성을 위해서 수열합성법을 이용하여 phosphorus (P) 도핑을 하였고, 나노와이어 diode 구조를 만들었다. P 도핑으로 인한 격자상수 변화는 x-ray diffraction (XRD)를 사용하여 확인하였고, x-ray photoelectron spectroscopy (XPS)를 통해 도핑 원소를 분석하였으며, 이때의 recification ratio, turn-on voltage 등의 전기적 특성을 평가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.442-449
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) films grown by a box cathode sputtering (BCS) were investigated as a function of oxygen flow ratio. A sheet resistance of $42.6{\Omega}/{\Box}$, average transmittance above 88% in visible range, and root mean spare roughness of $2.7{\AA}$ were obtained even in the IZO layers grown at room temperature. In addition, it is shown that electrical characteristics of the top-emitting organic light emitting diodes (TOLEDs) with the BCS grown-IZO top cathode layer is better than that of TOLEDs with DC sputter grown IZO top cathode, due to absence of plasma damage effect. Furthermore the effects of oxygen flow ratio in IZO films are investigated, based on x-ray photoelectron spectroscopy (XPS), ultra violet/visible (UV/VIS) spectro-meter, scanning electron microscopy (SEM), and atomic force microscopy (AFM) analysis results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1514-1519
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• 2009

We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

• Korean Journal of Microbiology
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• v.20 no.3
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• pp.125-133
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• 1982

Mutational experiments were performed to imporve the cellulase productivity of Aspergillus phoenicis KU175, isolated from the southern part of Korea, as a high cellulase producer. By treatment ultra-violet light nad 4-NQO(4-Nitroquinoline-N-Oxide), mutation waas induced, and treatment ultra-violet light and 4-NQO (4-Nitroquinoline-N-Oxide), mutation was induced, and A.phoenicis KU175-115 was finally selected for its highest avicelase production. Avicelase production of the mutant was increased about 2 times compared with those of the wild strain. However, activities of other hydrolytic enzymes, such as amylase, protease and nuclease, of the mutant strain didn't show a marked difference compared with those of the nuclease, of the mutant strain didn't show a marked difference compared with the wild strain, except slight increase in ribonuclease activity and slight decrease in glucoamylase activity. Avicelases from the mutant strain selected were purified from wheat bran culture by successive salting out, followed by dialysis and column chromatography, and their charcteristics were compared with thosw of the wild strain. Avicelase was separated into three peaks in the mutant strain as well as in the case of wild strain. Avicelase II activity of the mutant strain was prominently higher than that of the wild strain, while avicelase I and III activities of those were equivalent. The optimal pH ranges and stability of avicelase II from the mutant strain were pH4-5 and pH3.5-6.0, respectively, as well as in the case of the wild strain. The optimal temperature and thermal stability of avicelase II from the mutant strain were $40{\sim}50^{\circ}C\;and\;20{\sim}55^{\circ}C$, respectively. These results were same as those of the wild strain. By the using of Eadie-Hofastee plot, $K_m\;and\;V_{max}$ of avicelase II from the mutant and the wild strain were calculated to be 2.29mg/ml and $4.84{\mu}g$ reducing sugar as glucose per min equally, from the line fitted to the data by the least square method. Activity of avicelase II from the mutant strain was slightly activated by $Mg^{++}\;but\;inhibited\;by\;Cu^{++}, \;Mn^{++}\;and\;Zn^{++}$, as well as in the case of the wild strain. Therefore, it was concluded that the mutant didn't induce the formation of another avicelase isozyme, or the changes in the properties of avicelase, but induce the changes in the productively of the same avicelase II by the action of regulatory gane.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.