• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.324-326
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• 2004

We have obtained ultra-short pulses with a wavelength of 616 nm from a Distributed Feedback Dye Laser pumped by excimer laser. Using the second harmonic generation, we obtained ultra-short pulse at 308nm in ultraviolet region and also performed amplification in 3 stages of XeCl amplifiers.

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.10
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.4
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• pp.307-311
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• 2017

Ultra short pulse laser processing with the PI (polyimide) substrate is conducted to increase flexibility and radius of curvatures. A femtosecond laser is used to perform micro machining by minimizing the heat effect in PI substrate. The laser processing according to the parameters, such as fabricated line width, depth, laser power, distance between lines, is carried out to understand the characteristics of fabricated lines. A bending test is carried out to evaluate bending shapes and the radius of curvature after bending and spreading it 1000 times. The results demonstrates that the radius of curvature decreases in deepen lines and increases with the augment of the number of the fabricated lines, and distance between lines.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.335-338
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• 2004

We present the theoritical and numerical analysis of ultra short pulse Cr4+:Forsterite laser for the biomedical. We use a Cr4+:Forsterite that has a diameter of 3mm, a crystal length of 5mm and a chromium concentration of 0.04%. As a result of this experiment, We can know that lasing at pump power of 600mW, and saturated at pump power of 5W around.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.39-43
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• 2003

The technology required to advance the state of the art of ultra-high-intensity excimer amplifier construction to the 100 J/100fs output pulse level is identified. The preliminary design work for very large final amplifier pumped by electron beam module is described, and key design problems and approaches are presented and discussed in detail based on the recent experimental and theoretical results.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.47-48
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• 2007

• Journal of Mechanical Science and Technology
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• v.19 no.6
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• pp.1378-1389
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• 2005

This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.6
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• pp.457-466
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• 2014

This paper presents an analytic and numerical simulation of the generation and propagation of pico-second ultrasound with nano-scale wavelength, enabling the production of bulk waves in thin films. An analytic model of laser-matter interaction and elasto-dynamic wave propagation is introduced to calculate the elastic strain pulse in microstructures. The model includes the laser-pulse absorption on the material surface, heat transfer from a photon to the elastic energy of a phonon, and acoustic wave propagation to formulate the governing equations of ultra-short ultrasound. The excitation and propagation of acoustic pulses produced by ultra-short laser pulses are numerically simulated for an aluminum substrate using the finite-difference method and compared with the analytical solution. Furthermore, Fourier analysis was performed to investigate the frequency spectrum of the simulated elastic wave pulse. It is concluded that a pico-second bulk wave with a very high frequency of up to hundreds of gigahertz is successfully generated in metals using a 100-fs laser pulse and that it can be propagated in the direction of thickness for thickness less than 100 nm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.946-949
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• 2004

We obtained ultra-short single pulse with an energy of 80 uJ from Distributed feedback Dye laser. Using three stages of amplifiers constructed by two stages of dye amplifiers and one bethune cell amplifier, we obtained high power pulse and second harmonic generation with BBO in ultraviolet region.