• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.57.1-57.1
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• 2010

ITO(Indium Tin Oxide)는 전도도와 투과도 특성이 뛰어나 디스플레이, 태양전지, LED 등 여러 산업에서 전극 물질로 널리 사용 되어져 왔다. 최근 ITO의 사용이 급격히 증가하면서 이에 대한 연구가 활발히 진행되고 있다. ITO는 막의 특성을 좋게 하기 위하여 증착 시 Ar gas와 함께 $O_2$가스를 첨가하기도 한다. 본 연구에서는 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성에 대하여 연구하였다. Corning사의 eagle 2000 glass 기판위에 스퍼터링을 이용하여 ITO layer를 증측하였고, 증착시, $O_2$ partial pressure를 0 - 0.5%까지 0.1% 간격으로 가변하였다. 증착된 샘플은 Sinton사의 UV-vis 장비를 이용하여 광학적 특성을 측정하였고, Hall measurement 장비를 이용하여 전기적 특성을 측정하였다. ITO 박막은 $O_2$의 partial pressure가 증가할수록 향상된 전기적, 광학적 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Korean Journal of Medicinal Crop Science
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• v.12 no.3
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• pp.179-182
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• 2004

Bioassay-directed fractionation of the dried roots of Salvia miltiorrhiza led to the isolation of abietane tanshinones, cryptotanshinone and dibydrotanshinone I. Their structures were elucidated using $^1H-\;and\;^{13}C-NMR$, UV, IR and mass spectral analyses. These compounds exhibited a moderate antimicrobial activities against Staphylococcus epidemidis, Staphylococcus aureus, and Staphylococcus pyogene.

• KSBB Journal
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• v.19 no.4
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• pp.284-287
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• 2004

The purpose of this study was to find an optimum extraction condition of acanthoside-D from acanthopanax cortex with supercritical carbon dioxide as a solvent. In this effort, effects of the extraction conditions including pressure, temperature and presence or absence of a cosolvent on the extraction efficiency were investigated. The ethanol, water or 50% methanol was used as a cosolvent whilst the operating pressure ranged from 200 bar to 300 bar. The acanthoside-D concentrations were determined by means of HPLC equipped with a UV detector. From the results, it was observed that increase of higher pressure led to the higher extraction efficiency. Further, water was found to be the best cosolvent among the entrainers tested.

• Textile Coloration and Finishing
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• v.13 no.5
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• pp.306-311
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• 2001

Natural colorants haute attracted much attention all over the world because of their non-hazardous nature. The world is becoming increasingly aware of environmental Issues, such as ozone layer depletion, water pollution and waste disposal problems. The use of synthetic dyestuffs for their synthesis and application in the dyeing industries has been criticized due to introduction of contaminants into the environment. This has led to the desire to turn to the traditional, and more natural way of life. In this study, the colorants of extract of Ginkgo biloba bark were analysed and their dyeing properties on silk, wool and cotton were studied. It was found that uv-visible absorption spectra of extract of Ginkgo biloba bark showed two strong absorption Peaks in the range of 240 ∼400 In. From the result of IR spectra, the major ingredient of extract of Gikgo biloba bark seems to be the flavon which is one of the flavonoid derivatives. Silk, wool, and cotton dyed with the extract of Ginkgo biloba bark showed a reddish yellow color. Their color differences were increased drastically with repetition of dyeing by three times.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.174-174
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• 2003

ZnO는 상온에서 3.36 eV의 wide band gap과 60 meV의 큰 엑시톤 결합 에너지를 가지며, GaN(28 meV)와 ZnSe(19 meV)와 같은 wide band gap 재료와 비교해서 가장 우수한 exciton emission을 가진다. 이러한 특성 때문에 UV 레이저 및 LED와 같은 광학소자로서 그 응용의 잠재성이 높다. 박막의 우수한 광학적 특성과 결정성을 개선하기 위해 다양한 공정조건(RF 파워, 공정압력, 산소분압, 온도)에서 마그네트론 스퍼터링을 이웅하여 Si 기판상에 ZnO 박막을 성장 하였다. 또한, 저온 self-buffer를 이용하여 박막의 광학적 특성과 결정성을 더욱 개선 할 수 있었다. RF 파워와 공정압력은 박막의 PL(phothluminescehce) 특성이나 결정성에는 큰 영향을 주지 않았고 산소분압은 PL intensity의 변화를 가져왔으며, 온도는 결정성에 큰 영향을 주었다. 산소 분압이 증가 할수록 비화학량론적(산소 공공, 침입형 아연) 결함으로 인한 visiable 영 역의 peak 의 강도가 감소하는 것을 관찰하였다. 온도가 증가할수록 박막의 결정성에 나쁜 영향을 주었는데 저온 self-buffer를 도입하므로써 ZnO 박막의 결정성과 PL특성을 함께 개선하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.173-173
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• 2003

Nanowire와 nanorod 같은 1차원의 반도체 재료는 디멘젼과 크기와 물리적 특성과의 관계 등을 연구하는데 중요한 역할을 하며 laser ablation, arc discharge, chemical vapor depostion, vapor phase transport Process와 solution등의 방법으로 성공적으로 합성되었다. ZnO 는 3.37eV의 넓은 밴드갭과 다른 넓은 밴드갭 재료에 비해 높은 exciton bindng energy (60meV)를 가지며 UV LED, laser diode에 적용하기 유리하고 최근 디스플레나 나노 광전소자로서의 가능성 이 대두되면서 최근 이에 관한 연구가 증가하고 있다. 본 연구에서는 열적탄소환원법(carbothermal reduction process)으로 ZnO와 graphite 분말을 1:1 중량비로 혼합한 분말을 90$0^{\circ}C$, 100$0^{\circ}C$에서 air 분위기에서 20분간 반응 후 로 내에서 냉각 하였다. 직경 이 50nm-1000nm, 길이가 수 미크론인 내부 결함이 전혀 없는 육각형 단결정의 nanowire가 합성되었고 XRD, FE-SEM과 TEM으로 조성 및 형상, 내부구조를 분석하였다. 합성된 ZnO nanowire는 직경 이 변하는 부분에서 성장방향으로의 계단을 형성하였고 이는 layer by layer 방법으로 nanowire가 성장한다는 것을 나타낸다.

• Journal of Microbiology and Biotechnology
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• v.19 no.12
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• pp.1573-1575
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• 2009

Bioassay-guided fractionation of the culture broth of Aspergillus sp. FN070449 (KCTC 26428) using a DPPH (2,2-diphenyl-1-picrylhydrazyl) assay led to the isolation of two compounds: reticulone (1) and reticulol (2). Their chemical structures were elucidated on the basis of UV, IR, NMR, and MS spectroscopic analyses. Compound 1 exhibited more potent free radical scavenging activity on $ABTS^{\cdot+}$ (2,2'-azino-bis [3-ethylbenzthiazoline-6-sulphonic acid]) and DPPH radicals than did butylated hydroxyanisole (BHA) and caffeic acid.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.8
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• pp.767-773
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• 2008

This paper presents a localization system based on the use of electric compass and tracking IR light source. Digital RGB(Red, Green, Blue)signal of digital CMOS Camera is sent to CPLD which converts the color image to binary image at 30 frames per second. CMOS camera has IR filter and UV filter in front of CMOS cell. The filters cut off above 720nm light source. Binary output data of CPLD is sent to DSP that rapidly tracks the IR light source by moving Camera tilt DC motor. At a robot toward north, electric compass signals and IR light source angles which are used for calculating the data of the location system. Because geomagnetic field is linear in local position, this location system is possible. Finally, it is shown that position error is within ${\pm}1.3cm$ in this system.