• Journal of Korean Society of Water and Wastewater
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• v.23 no.1
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• pp.69-75
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• 2009

The characteristics of disinfection and organic removal were investigated with pulse UV lamp in this study. The intensity and emission wavelength of pulse UV Lamp were compared with low pressure UV lamp. The emission spectrum range of pulse UV lamp was between 200 and 400 nm while the emission spectrum of low pressure UV lamp was only single wavelength of 254nm. 3 Log inactivation rate of B. subtilis spore by pulse UV and low pressure UV irradiation was determined as $44.71mJ/cm^2$ and $57.7mJ/cm^2$, respectively. This results implied that wide range of emission spectrum is more effective compared to single wavelength emission at 254nm. 500ng/L of initial 2-MIB concentration was investigated on the removal efficiency by UV only and $UV/H_2O_2$ process. The removal efficiency of UV only process achieved approximately 80% at $8,600mJ/cm^2$ dose. 2-MIB removal rate of $UV/H_2O_2$ (5 mg/L $H_2O_2$) process was 25 times increased compared to UV only process. DOC removal efficiency for the water treatment plant effluent was examined. The removal efficiency of DOC by UV and $UV/H_2O_2$ was no more than 20%. Removal efficiency of THMFP(Trihalomethane Formation Potential), one of the chlorination disinfection by-products, is determined on the UV irradiation and $UV/H_2O_2$ process. Maximum removal efficiency of THMFP was approximately 23%. This result indicates that more stable chemical structures of NOM(Natural Organic Matter) than low molecule compounds such as 2-MIB, hydrogen peroxide and other pollutants affect low removal efficiency for UV photolysis. Consequently, pulse UV lamp is more efficient compared to low pressure lamp in terms of disinfection due to it's broad wavelength emission of UV. Additional effect of pulse UV is to take place the reactions of both direct photolysis to remove micro organics and disinfection simultaneously. It is also expected that hydrogen peroxide enable to enhance the oxidation efficiency on the pulse UV irradiation due to formation of OH radical.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1523-1525
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• 1999

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.587-587
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• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.103-106
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• 2000

ZnO is a wide-bandgap II-IV semiconductor and has a variety of potnetial applications. ZnO exhibits good piezoelectric, photoelectric and optical properties, and is a good candidate for an electroluminescence device. ZnO films have been deposited on (001) sapphire by PLD technique. Nd:YAG pulsed laser was operated at a wavelength of $\lambda=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C\; to\;700^{\circ}C$ films showed strong UV emission by increasing the partial oxygen pressure. We have investigated the relationship between partial oxygen pressure and the intensity of UV emission.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.76.3-76.3
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• 2017

We compare vertical profiles of the extraplanar $H{\alpha}$ emission to those of FUV and NUV emission for 39 nearby edge-on galaxies to investigate the origin of the extraplanar $H{\alpha}$ emission. A strong correlation between scale heights of the extraplanar $H{\alpha}$ and UV emissions is found. This may indicate that the diffuse extraplanar $H{\alpha}$ emission either co-exists with the extraplanar dust or originates from the similar mechanism as the diffuse extraplanar UV emission such as scattering of $H{\alpha}$ photons at diffuse extraplanar dust. The scale heights of the extraplanar $H{\alpha}$ and UV emissions are also compared with size, star formation rate, and star formation rate surface density of the host galaxies to figure out what is the most important parameter associated with the extraplanar emission.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.586-589
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• 2002

The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.15-20
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• 2007

We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.358-364
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• 2009

We investigated the growth of ZnO thin films with prominent emission characteristics through minimizing the formation of defects by using pulsed laser deposition (PLD). To do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature of $400-850^{\circ}C$ and then the variation of their structural and optical properties were analyzed by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO films were grown with c-axis preferential orientation irrespective of the substrate temperature. However, the crystallinity and stress state were dependent on the substrate temperature and the ZnO film deposited at $600^{\circ}C$ showed the best surface morphology and crystallinity with nearly no strain. And also this film exhibited outstanding emission characteristics from the viewpoint of full width half maximum of UV emission peak as well as visible emission due to defects. These results indicate that the emission characteristics of the ZnO films are strongly related to their structural characteristics influenced by substrate temperature. Consequently, ZnO films with strong UV emission and nearly no visible emission, which are applicable to UV emission devices, could be grown at the substrate temperature of $600^{\circ}C$ by PLD.