• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3443-3447
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• 2011

The spectroscopic behavior of catechin (5,7,3',4'-tetrahydroxyflavan-3-ol), has been studied in the presence and the absence of air using UV-vis absorption spectrophotometry and fluorescence spectroscopy. The UV-vis absorption spectrum of catechin shows a very sharp and strong absorption maximum peak at 275 nm in deaerated water. New absorption maximum peaks appeared in aerated water, as well as in basic aqueous solution, caused by the oxidation of catechin. The absorbances in the UV-vis absorption spectrum of catechin decreased when the solution was left in the dark for a long time. The fluorescence emission spectrum of catechin after a long time period differs markedly from that in freshly prepared solution; the fluorescence maxia shifted as time passes after adding catechin to the solutions. When the deaerated basic catechin solutions were left in the dark for a long time, their fluorescence quantum yields were found to be nearly zero. This suggests that the oxidized catechin molecules were seen to have slowly undergone successive chemical reactions in basic buffer solution.

• 천문학회지
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• 제33권1호
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• pp.57-73
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• 2000

We have done a spectroscopic study of the solar transition region using high resolution UV & EUV data obtained by SUMER(Solar Ultraviolet Measurements of Emitted Radiation) on board SOHO(Solar and Heliospheric Observatory). Optically thin and conspicuous emission lines observed at the solar limb are carefully selected to acquire average values of physical parameters for the quiet region as a function of radial distance. Our main results found from the present study can be summarized as follows. 1) Nonthermal velocities estimated from various UV lines do not decrease with height at least within one total line intensity scale height above the limb. 2) Nonthermal velocity distribution with temperature is very similar to that of the disk center, in the sense that its peak is located around $2{\times}10^5 K$, but the value is systematically larger than that of the disk. 3) It is found that nonthermal velocity is inversely proportional. to quadratic root of electron density up to about 10 arc seconds above the limb, i.e. ${\xi}\~N_e^{-1/4}$, implying that the observed nonthermal broadening can be attributed to Alfven waves passing through the medium. 41 Electron density estimated from the O V 629/760 line ratio is found to range from about $1{\times}10^{10}cm^{-3}$ to $2{\times} 10^{12}cm^{-3}$ in the transition region.

• Journal of Biosystems Engineering
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• 제35권2호
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• pp.124-131
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• 2010

Chlorophyll fluorescence has been researched for assessing fruit post-harvest quality and condition. The objective of this preliminary research was to investigate the potential of fluorescence spectroscopy for measuring apple fruit quality. Ultraviolet (UV) and blue light was used as an excitation source for inducing fluorescence in apples. Fluorescence spectra were measured from 'Golden Delicious' (GD) and 'Red Delicious' (RD) apples using a visible/near-infrared spectrometer after one, three, and five minutes of continuous UV/blue light illumination. Standard destructive tests were performed to measure fruit firmness, skin and flesh color, soluble solids and acid content from the apples. Calibration models for each of the three illumination time periods were developed to predict fruit quality indexes. The results showed that fluorescence emission decreased steadily during the first three minutes of UV/blue light illumination and was stable within five minutes. The differences were minimal in the model prediction results based on fluorescence data at one, three or five minutes of illumination. Overall, better predictions were obtained for apple skin chroma and hue and flesh hue with values for the correlation coefficient of validation between 0.80 and 0.90 for both GD and RD. Relatively poor predictions were obtained for fruit firmness, soluble solids content, titrational acid, and flesh chroma. This research has demonstrated that fluorescence spectroscopy is potentially useful for assessing selected quality attributes of apple fruit and further research is needed to improve fluorescence measurements so that better predictions of fruit quality can be achieved.

• Applied Biological Chemistry
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• 제46권4호
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• pp.305-310
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• 2003

Hydrophobic core가 변이된 유비퀴틴 단백질이 pH 2 용액에서 보이는 구조적인 특성을 여러 분광학적 방법으로 측정하였다. 낮은 pH값을 갖는 용액에서 이 변이 유비퀴틴의 intrinsic tryptophan fluorescence emission spectrum은 unfolded 상태보다 약간 blue shift되어 있고 또한 그 intensity도 상당히 낮게 나타났다. 이는 이 용액 조건에서 이 변이 유비퀴틴의 삼차구조가 약간 남아 있는 것을 의미한다. 같은 용액에서 이 변이 유비쥐틴의 far-UV circular dichroic spectrum은 native 상태나 unfolded 상태의 spectrum과 현저히 달랐으며 220 nm 에서의 molar ellipticity 값을 통하여 볼 때 pH 2인 용액에서 상당량의 이차구조를 지니고 있었다. 또한 같은 용액에서 이 변이 유비퀴틴은 hydrophobic dye인 8-anilinonaphthalene-1-sulfonic acid(ANS)외 fluorescence emission intensity를 증가시키고 fluorescence emission maximum이 짧은 파장에서 나타나게 하였다(blue shift). 이러한 현상은 pH 2 용액에서 이 변이 유비퀴틴의 hydrophobic core가 느슨하여져서 hydrophobic dye인 ANS가 결합할 수 있는 구조를 띠고 있음을 나타낸다. 이러한 분광학적인 관찰은 이 변이 유비귀틴이 pH 2인 용액에서 상당량의 이차구조를 지니고 있지만 hydrophobic core는 느슨하게 형성된 molten globule과 같은 형태를 지니고 있음을 나타낸다. 이 변이 유비퀴틴의 molten 히obule 형태는 단백질 폴딩 반응의 경로를 연구할 수 있는 좋은 모델이 될 수 있을 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Korean Wood Science and Technology
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• 제36권6호
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• pp.49-58
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• 2008

본 연구는 내구성이 우수하며 포름알데히드방출이 적은 페놀수지 사용 메란티합판을 마루판용 대판으로 사용하고 북미산 벚나무 단판을 표면재료로 사용한 마루판의 제조과정에서 접착제 및 도료에 녹차잎 분말을 첨가하였을 때 마루판으로부터 방출하는 총휘발성유기화합물(TVOC)과 포름알데히드의 감소효과와 녹차잎 분말의 적정 첨가량을 구명하였다. 1) 녹차잎 분말의 폴리페놀화합물량은 9.85%였다. 2) 녹차잎 분말은 FT-IR 결과 벤즈알데히드와 에틸헥사알콜과 반응하여 화학결합을 하는 것으로 나타났다. 3) 페놀수지메란티대판에 벚나무단판오버레이 마루판 제조를 위한 접착제와 UV도료에 전건중량기준으로 2.5%의 녹차잎 분말을 각각 첨가하는 것이 총휘발성유기화합물과 포름알데히드의 방산제거 효과가 매우 적절한 것으로 나타났다. 4) 20L 소형챔버법에 의한 녹차잎 분말 2.5%를 접착제와 도료에 각각 첨가한 온돌용 마루판의 7일째 TVOC는 $0.089mg/m^2hr$이고 포름알데히드는 $0.001mg/m^2hr$를 나타내 최우수등급으로 나타났다.

• 공업화학
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• 제34권5호
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• pp.522-528
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• 2023

반도체 제조공정인 다이싱 공정용 점착 테이프를 제조하기 위해 다양한 개수의 광 반응기를 갖는 화합물을 합성하였고 아크릴 공중합체에 도입하여 UV 경화형 아크릴 점착제를 제조하였다. 합성된 광반응성 화합물(f = 2 또는 3)의 구조는 NMR을 이용하여 확인하였다. 광반응성 화합물(f = 1~3)은 우레탄 반응을 통해 아크릴 점착제의 곁가지로 도입되었고, FT-IR 측정을 통해 UV 경화형 아크릴 점착제가 성공적으로 합성되었음을 확인하였다. UV 조사 전 후의 박리강도 변화는 실리콘 웨이퍼를 기재로 하여 평가되었으며, UV 조사 전 점착제의 높은 박리강도(~2000 gf/25 mm)가 UV조사 후 크게 감소(~5 gf/25 mm)하였다. 다 관능성 광 반응기가 도입된 점착제의 점착력 감소 효과가 가장 컸으며 FE-SEM을 통한 표면 잔류물 측정 결과, UV 조사 후의 표면 잔류물도 매우 낮은 수준(~0.2%)으로 관찰되었다.

• 한국진공학회지
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• 제22권6호
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• pp.291-297
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• 2013

Au 촉매를 코팅한 사파이어 기판 상에서 산화아연과 흑연 분말을 혼합한 분말재료를 이용하여 VLS (vapor-liquid-solid) 법으로 산화아연 반도체 나노선을 합성하였다. 제조된 산화아연 나노선은 380 nm에서 근 자외선 영역의 NBE (near-band edge) 발광과 600 nm 부근의 가시광선 영역에서 넓게 퍼져 발광하는 상대적으로 강한 DL (deep level) 발광이 확인되었다($I_{NBE}/I_{DL}$ <1). 산화아연 나노선을 효율적인 단일 파장 자외선 발광체에 적용될 수 있도록 NBE 발광을 극대화함과 동시에 DL 발광을 억제시키기 위하여 본 실험에서는 합성된 산화아연 나노선에 수소 플라즈마 처리를 하였다. 플라즈마 처리시간이 길어짐에 따라(120초 이상) 발광특성의 향상정도는 점차로 감소하였지만, 수소 플라즈마 처리를 통해 나노선 내부에 존재하는 불순물 제어 등으로 다소 짧은 시간의 플라즈마 처리로(90초 이내) DL발광대비 NBE발광의 세기가 약 4배로 향상됨을 확인 하였다($I_{NBE}/I_{DL}$ ~4).

• 한국세라믹학회지
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• 제43권3호
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• 한국재료학회지
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• 제18권2호
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.