• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.49-52
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• 2003

Two types of ozone monitors using UV absorption method were tried in consideration of cost of the monitor and precision in measuring. The high concentration ozone monitor for high concentration real time ozone monitoring from ozone generator was composed of a low pressure mercury lamp as UV source, a photo multiplier tube as UV detector and signal processing unit for the most part. This structure could be very useful for low price high concentration ozone monitor due to simple system structure and fairly good monitoring characteristics. The developed system showed good linear output characteristics to ozone in the measuring concentration range of 0.05 and 2 wt.%. For accuracy ambient ozone monitoring in ambient in ppm level, the system composed of a high power pulsed xenon lamp as UV source, an optical spectrometer with a high sensitivity linear CCD array as UV detector and signal processing unit in brief speaking was proposed our study for the first time in the world. The developed system showed good linearity and sensitivity in relative low measuring range between 10ppm and 10,000ppm, and showed some feasibility of high resolution ozone monitor using CCD array as photodetector.

• 한국정보통신학회논문지
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• 제12권1호
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• pp.158-163
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• 2008

UV기술에 기반한 오존모니터는 신호의 안정성 때문에 널리 활용되어오고 있다. 먼저 오존 발생기에서 나오는 오존농도를 실시간, 고정 밀로 측정하기 위해서 저압 수은램프를 UV광원으로 하고, 광증배관을 UV 감지기로 하는 시스템을 구성하였다. 이 구조는 저 비용의 고농도 오존의 계측에 유용한 시스템으로서 단순한 구조와 비교적 우수한 계측성 능을 얻을 수 있었다. 제조된 시스템은 $0.05{\sim}2w1.%$의 측정 농도영역에서 좋은 선형성을 나타내었다. ppm정도의 보다 정밀한 농도계측을 위해서는 UV광원으로서 고출력 펄스 크세논램프를 사용하고, CCD어레이를 광스펙트로메터로 사용하도록 시스템을 설계하였다. CCD출력으로부터의 광신호는 우수한 반응성과 띄어난 광해상도를 가지고 디지털신호로 변환되고, 이 디지털신호는 PC의 스크린에 디스플레이 되도록 설계되었다. 제작된 시스템은 $10{\sim}10,000ppm$ 영역에서 선형적이고 우수한 감도를 보였으며 저 농도의 오존을 측정하는 시스템으로서의 가능성을 보여주었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.605-608
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• 2004

A $Pt/Al_xGa_{l-x}N$ Schottky type Ultra-violet photodetector was modeled and simulated using the commercial SILVACO software program. In the carrier transport, we applied field model and other analytic model to determine the electron saturation velocity and low field mobility for GaN and $Al_xGa_{l-x}N$. A C-Interpreter function was defined to described the mole-fraction for the ternary compound semiconductor such as $Al_xGa_{l-x}N$. As comparing the simulated and experimental results, we found that the simulated result for type-1 has $15.9 nA/cm^2$ of leakage current at 5V. We confirmed a good agreement of photo-current in the UV Photo-detector, while applying the absorption coefficient and reflective index of active $Al_xGa_{l-x}N$ and other layers. There had been an intensive search for the proper refractive indices of the layers.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.883-888
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• 2007

Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.201-204
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• 2002

A high accuracy ozone monitor using UV absorption method was developed for ambient ozone monitoring. The system was mainly composed of a high power pulsed xenon lamp as UV source, an optical spectrometer with a high sensitivity linear CCD array as UV detector and signal processing unit. The optical signal from the CCD array that provides unusually high response and excellent optical resolution for ozone concentration was converted to digital signal and the digital signal was displayed on screen using PC interface. The optical signal was propagated using optic fiber to reduce optical loss to increase the accuracy of the measuring system. This paper has been studied a interworking signalling protocol between two hybrid networks by analyzing Satellite B-ISDN architecture, DSS2 Layer 3 Signalling protocol, B-ISUP protocol, S-BISUP protocol stack and so on. Also in the paper, messages and primitives have been defined for B-ISDN's Connection Type, Ownership and each protocol in order to connect point-to-multipoint. The ozone sensing properties of the CCD ozone monitor was compared with those of the photo multiplier ozone monitor.

• 센서학회지
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• 제20권3호
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.

• 한국재료학회지
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• 제14권6호
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• pp.407-412
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• 2004

Photo decomposition of gas phase benzene by $TiO_2$ thin films chemically deposited on alumina balls were investigated under UV irradiation. Photo decomposition rates were measured in real time during the reaction using a photo ionization detector, which ionizes C-H bonding of benzene molecules and then converts into volatile organic compounds (VOCs) concentrations. From the measuring results, the VOCs concentration increased instantly when IN irradiated because C-H bonds of benzene molecules strongly absorbed on the surface of $TiO_2$ films before the IN irradiation was destroyed by photo decomposition. After that, the VOCs concentration decreased with increasing surface area of $TiO_2$ and reaction time under the IN irradiation. At the optimal conditions for the photo decomposition of gas phase benzene, the reaction rate of the photo decomposition for high concentrations (over 60 ppm) was slow but that of relatively low concentration (under 60 ppm) was fast, due to limited surface area of $TiO_2$ thin films for the reaction. Thus, it is concluded that the photo decomposition rate was mainly affected by the surface area of $TiO_2$ or absorption reaction.

• 대한전자공학회논문지SD
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• 제40권7호
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• pp.486-493
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• 2003

유기금속 화학기상 증착법(MOCVD)을 이용하여 사파이어 기판에 AlGaN/n/sup ＋/-GaN 구조와 AlGaN/AlGaN interlayer/n/sup ＋/-GaN 구조로 성장시킨 AlGaN 층을 이용하여 쇼트키형 자외선 수광소자를 제작하였다. 성장층은 약 1018의 캐리어 농도와 각각 236과 269 ㎠/V·s의 이동도를 가진다. 메사구조를 형성하기 위해 ICP 장비로 식각한 후, Si₃N₄로 절연한 뒤 Ti/Al/Ni/Au와 Pt를 이용하여 저항성 전극 및 쇼트키전극을 형성하였다. 그리고 interlayer를 갖는 Pt/Al/sub 0.33/Ga/sub 0.67/N의 전기적 특성은 -5 V에서 1 ㎁의 낮은 누설전류를 보였고, interlayer가 없는 Pt/Al/sub 0.33/Ga/sub 0.67/N은 0.1㎂로 나타났다. 광측정 결과, interlayer를 갖는 Pt/Al/sub 0.33/Ga/sub 0.63/N 쇼트키 수광소자는 차단파장이 약 300 ㎚이며, 광응답도는 280 ㎚에서 0.15 A/W, 그리고 자외선 대 가시광선 제거비는 1.5×10⁴로 우수한 반응특성을 보였다.

• 한국대기환경학회지
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• 제17권5호
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• pp.385-393
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• 2001

We have developed a Differential Absortion LIDAR (DIAL) method for the measurement of lower tropospheric ozone concentration. We used two laser beams from quadrupled Nd:YAG (266 nm) for the resonance wavelength and dye lasers (299.5 nm) for non -resonance wavelength. Aerosol extinction coefficients in the lower troposphere was computed by both Klett and Slope methods. To correct the SIN (Signal -Induced Noise) effect caused by photo detector, we subtracted a new-fitted baseline on the background part of a LIDAR signal, after the subtraction of the DC level. This is because SIN can be treated as an exponentially decaying tail. Using theme results, ozone profiles were obtained approximately 2km at daytime and 3km at nighttime. We compared the results derided by the Slope method with those measured by UV spectrometer. The computed results are in mostly good agreement with experimental results. In the measurement of the vertical layer, we observed the variation of the ozone profiles around the top mixed layer.