• Journal of Internet Computing and Services
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• v.14 no.2
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• pp.45-51
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• 2013

In this paper, the combination of ultraviolet and infrared sensors based design for flame signal detection algorithms was proposed with the application of light-wavelength from burning. And, the performance result of image detection was compared by an ultraviolet sensor, an infrared sensor, and the proposed dual-mode sensors(combination of ultraviolet and infrared sensors).

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.314-316
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• 2005

이 논문에서는 아크 용접시 발생하는 IR신호와 UV호의 상호 관계를 알아보려고 레이저 용접진단에 사용되는 IR-UV 센서 모니터링 시스템을 적용하였다. 그 결과 IR신호 크기는 용접폭에 관련이 있고, 펄스 형태의 UV신호는 IR신호 증가율이 임계값을 넘으면 나타나는 것을 알 수 있다.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.83-87
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• 2015

This study was focused on developing an optical sensor that monitors ultraviolet (UV) light. Recently, we proposed and demonstrated a novel, highly sensitive UV sensor based on a fiber Bragg grating (FBG). To ensure that the incident UV light is focused on the FBG surface, the sensor was coated with an azobenzene polymer material that acts as a UV-induced stretchable functional material, in combination with a cylindrical focal lens. In this study we have improved the sensitivity of the sensor by employing a cylindrical focal mirror as a curved reflector, to refocus the UV light passing through the FBG. We considered the performance of several different types of reflectors and chose the optimal radius of curvature for the reflector. Compared to the UV sensor without an auxiliary device, the sensitivity of the FBG sensor with a focal lens and a curved reflector was 15 times as high.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.91-95
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• 2006

High-density image sensors rave microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using UV transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.17-21
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• 2005

High-density image sensors have microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using W transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.72-75
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• 2012

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NW-based UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 ${\mu}S$(under dark condition) and 9.5 ${\mu}S$ (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Journal of Sensor Science and Technology
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• v.29 no.3
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• pp.187-193
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• 2020

Ultraviolet (UV) sensors are widely applied in industrial and military fields such as environmental monitoring, medicine and astronomy. Zinc oxide (ZnO) is considered as one of the promising materials for UV sensors because of its ease of fabrication, wide bandgap (3.37 eV) and high chemical stability. In this study, we used the hydrothermal growth of ZnO to form two types of ZnO nanostructures (Nanoflower and nanorod) and applied them to a UV sensor. To improve the performance of the UV sensor, the hydrothermal growth was used in a two-step process for fabricating ZnO hierarchical nanostructures. The fabricated ZnO hierarchical nanostructure improved the performance of the UV sensor by increasing the ratio of volume to surface area and the number of nanojunctions compared to one-step hydrothermal grown ZnO nanostructure. The UV sensor based on the ZnO hierarchical nanostructure had a maximum photocurrent of 44 ㎂, which is approximately 3 times higher than that of a single nanostructure. The UV sensor fabrication method presented in this study is simple and based on the hydrothermal solution process, which is advantageous for large-area production and mass production; this provides scope for extensive research in the field of UV sensors.

• Journal of Sensor Science and Technology
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• v.13 no.5
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• pp.350-355
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• 2004

A novel UV sensor was manufactured and characterized using the evanescentfield coupling between fiber-planar waveguide (PWG) coupler and prism. A spiroxazine dye was chosen as planar waveguide because its photochromic isomerization induced by UV irradiation. A novel UV sensor was proposed to measure the variation of refractive index and absorption coefficient simultaneously. The wavelength responses of these sensors by UV exposure times were measured 0.48 nm/sec, 0.757 nm/sec, and ATR output power variations were measured $-0.424{\mu}W$/sec and $-0.62{\mu}W$/sec when UV exposure power were 3 mW and 5 mW, respectively.