• 인터넷정보학회논문지
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• 제14권2호
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• pp.45-51
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• 2013

본 논문에서는 자외선(UV, ultraviolet) 및 적외선(IR, infrared) 센서를 결합함으로서 불이 연소하면서 방출하는 빛의 파장을 활용한 영상신호를 검출하는 결합형 불꽃영상 검출시스템은 적외선 센서와 자외선 센서 기반의 신호처리 알고리즘 설계방안을 제안한다. 또한, 설계한 듀얼모드인 결합형 불꽃영상 검출시스템은 단독형 적외선 또는 자외선 센서 기반의 영상검출 알고리즘의 검출 성능결과를 비교한다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.314-316
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• 2005

이 논문에서는 아크 용접시 발생하는 IR신호와 UV호의 상호 관계를 알아보려고 레이저 용접진단에 사용되는 IR-UV 센서 모니터링 시스템을 적용하였다. 그 결과 IR신호 크기는 용접폭에 관련이 있고, 펄스 형태의 UV신호는 IR신호 증가율이 임계값을 넘으면 나타나는 것을 알 수 있다.

• 한국광학회지
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• 제26권2호
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• pp.83-87
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• 2015

본 논문은 자외선 광학센서 개발에 관한 것이다. 기존에 반도체 기반 자외선 센서를 대체하기 위해 개발된 단주기 광섬유격자기반 자외선 센서에 대한 측정 민감도를 향상시키기 위한 다양한 장치들을 설계하고 실험을 통해 성능을 확인하였다. 최근 연구를 통해 자외선 흡수에 따라 인장력이 유도되는 아조벤젠 폴리머 재료와 장력에 따른 광섬유격자 특성 변화를 조합하여 새로운 자외선 센서의 개념이 제시되었다. 본 연구에서는 광섬유격자 기반 자외선 센서에서 흡수하지 못하고 통과되는 자외선 잔광을 반사판을 이용해서 다시 반사시켜 센서에서 재흡수되는 원리로 센서의 민감도를 향상시켰다. 본 논문에서는 반사판의 종류를 선정하고 반사판의 곡률반경을 최적화하였다. 또한 기존의 원통형 집광렌즈를 이용한 민감도 향상 기술을 접목 시켜 아무런 장치가 없을 때와 비교해서 약 15배의 성능을 향상시키는 결과를 얻었다. 또한 외부 환경 효과를 줄이기 위한 패키지 모듈을 제작하여 적용하고 그 특성을 분석하였다.

• 정보저장시스템학회논문집
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• 제2권2호
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• pp.91-95
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• 2006

High-density image sensors rave microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using UV transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.17-21
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• 2005

High-density image sensors have microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using W transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• 센서학회지
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• 제28권3호
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Korean Chemical Engineering Research
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• 제50권1호
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• pp.72-75
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• 2012

Strain-free AlGaN/GaN 나노선을 기판에 분산시킨 후 E-beam lithography(EBL)를 이용해 단일 나노선 자외선 센서를 제작하였다. 나노선의 구조적, 광학적 특성을 분석하기 위해 focused ion beam(FIB), photoluminescence, micro-Raman spectroscopy를 이용하여 나노선의 strain 및 형태를 조사하였다. 자외선 센서로서의 특성 여부를 확인하기 위하여 빛을 차단 한 조건과 자외선을 조사하는 조건하에서 current-voltage(I-V) 특성을 측정하였으며 각각 9.0 ${\mu}S$과 9.5 ${\mu}S$의 전기전도도(conductance)를 얻었다. 자외선 조사 조건하에서 excess carrier의 증가로 인해 전기전도도가 약 5%가 향상되었음을 알 수 있었다. 자외선을 반복적으로 조사하는 과정의 실험을 통해 우수한 포화 시간(saturation time)과 감쇠 시간(decay time)을 얻었다. 따라서 AlGaN/GaN 나노선은 자외선 센서로서 많은 가능성을 가지고 있음을 확인하였다.

• 센서학회지
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• 제17권5호
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• pp.346-349
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• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• 센서학회지
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• 제29권3호
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• pp.187-193
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• 2020

Ultraviolet (UV) sensors are widely applied in industrial and military fields such as environmental monitoring, medicine and astronomy. Zinc oxide (ZnO) is considered as one of the promising materials for UV sensors because of its ease of fabrication, wide bandgap (3.37 eV) and high chemical stability. In this study, we used the hydrothermal growth of ZnO to form two types of ZnO nanostructures (Nanoflower and nanorod) and applied them to a UV sensor. To improve the performance of the UV sensor, the hydrothermal growth was used in a two-step process for fabricating ZnO hierarchical nanostructures. The fabricated ZnO hierarchical nanostructure improved the performance of the UV sensor by increasing the ratio of volume to surface area and the number of nanojunctions compared to one-step hydrothermal grown ZnO nanostructure. The UV sensor based on the ZnO hierarchical nanostructure had a maximum photocurrent of 44 ㎂, which is approximately 3 times higher than that of a single nanostructure. The UV sensor fabrication method presented in this study is simple and based on the hydrothermal solution process, which is advantageous for large-area production and mass production; this provides scope for extensive research in the field of UV sensors.

• 센서학회지
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• 제13권5호
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• pp.350-355
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• 2004

A novel UV sensor was manufactured and characterized using the evanescentfield coupling between fiber-planar waveguide (PWG) coupler and prism. A spiroxazine dye was chosen as planar waveguide because its photochromic isomerization induced by UV irradiation. A novel UV sensor was proposed to measure the variation of refractive index and absorption coefficient simultaneously. The wavelength responses of these sensors by UV exposure times were measured 0.48 nm/sec, 0.757 nm/sec, and ATR output power variations were measured $-0.424{\mu}W$/sec and $-0.62{\mu}W$/sec when UV exposure power were 3 mW and 5 mW, respectively.