• Title/Summary/Keyword: UHV

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Construction of an Ultra High Vacuum Molecular Beam Epitaxy System and Optical Property of ZnSe/GaAs(001) Epitaxial films (초고진공 분자선 에피성장 시스템의 제작과 에피성장된 ZnSe/GaAs(001)의 광학특성)

  • Kim, Eun-Do;Son, Young-Ho;Eom, Gi-Seog;Cho, Seong-Jin;Hwang, Do-Weon
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.458-464
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    • 2006
  • The construction and the performance test of an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system has been completed successfully. We have done domestic development and tried performance test for ultra high vacuum molecular beam epitaxy system. This system has reached pressure $2X10-^{10}$ Torr and the substrate has reached temperature $1,100^{\circ}C$. We have investigated into the characteristic of ZnSe/GaAs(001) by using scanning electron microscope (SEM), atomic force microscope (AFM), x-ray diffraction (XRD) and photolumi-nescence (PL).

Experimental Approach to Equalizing the Orifice Method with the Throughput One for the Measurement of TMP Pumping Speed

  • Lim, J.Y.;Kang, S.B.;Shin, J.H.;Koh, D.Y.;Cheung, W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.18-18
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    • 2010
  • Methods of the characteristics evaluation of turbo-molecular pumps (TMP) are well-defined in the international measurement standards such as ISO, PNEUROP, DIN, JIS, and AVS. The Vacuum Center in the Korea Research Institute of Standards and Science has recently designed, constructed, and established the integrated characteristics evaluation system of TMPs based on the international documents by continuously pursuing and acquiring the reliable international credibility through measurement perfection. The measurement of TMP pumping speed is normally performed with the throughput and orifice methods dependent on the mass flow regions. However, in the UHV range of the molecular flow region, the high uncertainties of the gauges, mass flow rates, and conductance are too critical to precisely accumulate reliable data. With UHV gauges of uncertainties less than 15% and a calculated conductance of the orifice, about 35% of pumping speed uncertainties are experimentally derived in the pressure range of less than $10^{-6}$ mbar. In order to solve the uncertainty problems of pumping speeds in the UHV range, we introduced an SRG with 1% accuracy and a constant volume flow meter (CVFM) to measure the finite mass flow rates down to $10^{-3}$ mbar-L/s with 3% uncertainty for the throughput method. In this way we have performed the measurement of pumping speed down to less than $10^{-6}$ mbar with an uncertainty of 6% for a 1000 L/s TMP. In this article we suggest that the CVFM has an ability to measure the conductance of the orifice experimentally with flowing the known mass through the orifice chambers, so that we may overcome the discontinuity problem encountering during introducing two measurement methods in one pumping speed evaluation sequence.

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Si/SiGe Epitaxial Growth by UHV-CVD

  • Song, Seok-Chan;Im, Seung-Hyeon;Lee, Seung-Yun;Park, Tae-Seo;Lee, Jong-Ho;Yun, Ui-Jun;Park, Jeong-U;Choe, Si-Yeong;Gang, Ho-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2002.02a
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    • pp.92-92
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    • 2002
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The Improvement in Pumping Characteristics of Sputter Ion Pumps in the Ultra High Vacuum(UHV) Region (이온펌프의 초고진공영역에서의 배기특성개선)

  • 김정선;여환욱;박종윤
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.401-404
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    • 1994
  • 초고 진공영역에서 배기특성 개선을 위하여 재질 및 구조가 다른 세가지 형태의 60(l/s) 형이온 펌프를 제작하여 그 배기특성을 측정하였다. 그 결과 음극판에 Ta 선을 전기용접한 펌프와 양극 cell의 구조에 변화를 준 펌프의 배기속도가 상용으로 이용되고 있는 펌프에 비해 약 50% 이상 개선되었다.

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Determination of the NDR and Electron Transport Properties of Self-Assembled Nitro-Benzene Monolayers Using UHV-STM

  • Lee Nam-Suk;Chang Jeong-Soo;Kwon Young-Soo
    • Journal of Electrical Engineering and Technology
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    • v.1 no.3
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    • pp.366-370
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    • 2006
  • We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.

Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method (PLD법을 이용한 Buffer Layer 증착온도에 따른 As-doped ZnO 박막의 특성)

  • Lee, Hong-Chan;Shim, Kwang-Bo;Oh, Young-Jei
    • Journal of Sensor Science and Technology
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    • v.15 no.2
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    • pp.84-89
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    • 2006
  • Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.