• 한국진공학회지
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• 제15권5호
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• pp.458-464
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• 2006

본 연구에서는 초고진공 (UHV; ultra high vacuum) 분자선 에피성장 (MBE; molecular beam epitaxy) 시스템의 제작과 성능연구가 성공적으로 이루어졌다. 초고진공 용 분자선 에피성장 시스템을 국산화개발 및 제작하여, 장비에 관한 성능 테스트를 하게 되었다. 본 장비의 진공도가 $2X10^{10}$ Torr에 도달함을 확인하였고, 시편 가열모듈(substrate heating module)이 $1,100^{\circ}C$까지 가열됨을 확인할 수 있었으며, ZnSe/GaAs(001)의 증착특성을 SEM (scanning electron microscope), AFM (atomic force microscope), XRD (x-ray diffraction), PL (photoluminescence) 등으로 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.18-18
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• 2010

Methods of the characteristics evaluation of turbo-molecular pumps (TMP) are well-defined in the international measurement standards such as ISO, PNEUROP, DIN, JIS, and AVS. The Vacuum Center in the Korea Research Institute of Standards and Science has recently designed, constructed, and established the integrated characteristics evaluation system of TMPs based on the international documents by continuously pursuing and acquiring the reliable international credibility through measurement perfection. The measurement of TMP pumping speed is normally performed with the throughput and orifice methods dependent on the mass flow regions. However, in the UHV range of the molecular flow region, the high uncertainties of the gauges, mass flow rates, and conductance are too critical to precisely accumulate reliable data. With UHV gauges of uncertainties less than 15% and a calculated conductance of the orifice, about 35% of pumping speed uncertainties are experimentally derived in the pressure range of less than $10^{-6}$ mbar. In order to solve the uncertainty problems of pumping speeds in the UHV range, we introduced an SRG with 1% accuracy and a constant volume flow meter (CVFM) to measure the finite mass flow rates down to $10^{-3}$ mbar-L/s with 3% uncertainty for the throughput method. In this way we have performed the measurement of pumping speed down to less than $10^{-6}$ mbar with an uncertainty of 6% for a 1000 L/s TMP. In this article we suggest that the CVFM has an ability to measure the conductance of the orifice experimentally with flowing the known mass through the orifice chambers, so that we may overcome the discontinuity problem encountering during introducing two measurement methods in one pumping speed evaluation sequence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제22회 학술발표회 초록집
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• pp.92-92
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• 2002

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2009년도 정기총회 및 동계학술연구발표회
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• pp.100-100
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• 2009

• 한국진공학회지
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• 제3권4호
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• pp.401-404
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• 1994

초고 진공영역에서 배기특성 개선을 위하여 재질 및 구조가 다른 세가지 형태의 60(l/s) 형이온 펌프를 제작하여 그 배기특성을 측정하였다. 그 결과 음극판에 Ta 선을 전기용접한 펌프와 양극 cell의 구조에 변화를 준 펌프의 배기속도가 상용으로 이용되고 있는 펌프에 비해 약 50% 이상 개선되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.88-88
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• 2003

• NEWSLETTER 전기공업
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• 93-2호통권75호
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• pp.1-16
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• 1993

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 자성 및 자성재료 국제학술대회
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• pp.112-112
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• 2014

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.366-370
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• 2006

We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.