• 제목/요약/키워드: Type V

검색결과 5,529건 처리시간 0.048초

PN 접합형 Photodiode 제작에 관한 연구 (A Study on Fabrication of PN Junction Type Si Photodiode)

  • 조호성;오종환;홍창희
    • 대한전자공학회논문지
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    • 제26권11호
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    • pp.1652-1657
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    • 1989
  • In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of $6328{\AA}$

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The Order of Normal Form Generalized Hypersubstitutions of Type τ = (2)

  • Sudsanit, Sivaree;Leeratanavalee, Sorasak
    • Kyungpook Mathematical Journal
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    • 제54권3호
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    • pp.501-509
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    • 2014
  • In 2000, K. Denecke and K. Mahdavi showed that there are many idempotent elements in $Hyp_{N_{\varphi}}(V)$ the set of normal form hypersubstitutions of type ${\tau}=(2)$ which are not idempotent elements in Hyp(2) the set of all hypersubstitutions of type ${\tau}=(2)$. They considered in which varieties, idempotent elements of Hyp(2) are idempotent elements of $Hyp_{N_{\varphi}}(V)$. In this paper, we study the similar problems on the set of all generalized hypersubstitutions of type ${\tau}=(2)$ and the set of all normal form generalize hypersubstitutions of type ${\tau}=(2)$ and determine the order of normal form generalize hypersubstitutions of type ${\tau}=(2)$.

InSe 단일층의 도핑 가능성 탐색 연구

  • 신유지;이예슬
    • EDISON SW 활용 경진대회 논문집
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    • 제6회(2017년)
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    • pp.404-411
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    • 2017
  • 이 논문에서는 2차원 화합물 반도체인 Indium Selenide monolayer의 효과적인 도펀트 원소를 탐색해보았다. 총 4가지 종류의 원소를 도핑시켜 계산을 했다. In 자리에 Mg과 Sn을 도핑시켜 각각 p-type과 n-type으로 만들고 Se 자리에 As과 Br을 도핑시켜 각각 p-type과 n-type으로 만들었다. 변화한 성질을 알아보기 위해 전자 구조를 분석하고 band structure와 DOS를 살펴보았다. P-type 같은 경우, Mg doped InSe는 shallow defect level이 생겨 좋은 반도체로 쓰일 수 있지만 As을 도핑한 InSe는 deep defect states가 생겼다. VBM에서 약 0.67 eV만큼 떨어져있는데 이 수치는 실험값과 비슷한 값이다. N-type 경우에는 Sn doped InSe는 deep defect states가 생겼고, CBM 아래로 약 0.08eV만큼 defect가 생긴 것이 실험값과 비슷하다. Br doped InSe는 Sn doped InSe보다 안정적인 n형 반도체가 될 수 있다.

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양전자 소멸 측정법으로 양성자 조사에너지 변화에 대한 n, p형 실리콘 구조 특성 (Investigation of Various Radiation Proton Energy Effect on n, p Type Silicon by Positron Annihilation Method)

  • 이종용
    • 한국진공학회지
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    • 제22권6호
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    • pp.341-347
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    • 2013
  • 동시 계수 도플러 넓어짐 양전자 소멸 분광법으로 n형과 p형 실리콘 시료에 40.0, 3.98 MeV 에너지를 가진 $0.0{\sim}20.0{\times}10^{13}protons/cm^2$ 양성자 빔 조사에 의한 결함을 측정하여 시료 특성을 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 감마선 스펙트럼의 전자 밀도 에너지에 의한 수리적 해석 방법인 S-변수를 사용하여, 시료의 구조 변화를 측정하였다. 본 연구에서 측정된 S-변수는 시료에 조사된 양성자 조사량의 변화에 따라 결함이 증가하였으며, 그리고 40 MeV 양성자 빔의 세기는 n형 실리콘에서 빔의 조사량 $20.0{\times}10^{13}protons/cm^2$에서 3.98 MeV 보다 결함의 영향이 더 큰 것으로 나타났다. 그 결과 조사에 너지와 조사량의 상관관계를 비교 분석하였다. SRIM 시뮬레이션의 결과는, 양성자의 Bragg 피크 특성 때문에 시료 전체에 대한 결함으로 나타나기 보다는 양성자가 시료의 특정 깊이에 주로 결함을 형성하는 것을 보여 준다.

A New DAC Employing Source-follower type Analog Buffer with P-type Poly-Si TFTs in Active-Matrix Displays

  • Nam, Woo-Jin;Jung, Sang-Hoon;Kim, Ji-Hoon;Shin, Hee-Sun;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.999-1002
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    • 2004
  • We propose and simulate a new integrated DAC analog buffer composed of only p-type poly-Si TFTs in AMLCD and AMOLED. Proposed circuit employs a voltage level shifter which $V_{OUT}$ has a linear functional relation to $V_{IN}$. The proposed scheme enables to allow a constant $V_{GS}$ of buffer transistor so that the charging speed of pixel data address is improved.

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22.9kV 중성점 다중접지계통에 CD형 초전도케이블을 적용한 경우의 지락전류변화 (Ground Fault Current Variation of 22.9kV Multi Neutral Grounded Distribution System with CD Type Superconducting Cable)

  • 이종배;황시돌;손송호;이근준
    • 전기학회논문지
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    • 제56권6호
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    • pp.993-999
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    • 2007
  • This paper discusses the effects of CD type superconducting cable operation in 22.9kV multi neutral grounded distribution system during L-G fault and counterplans to power system protection. In case of using the 3-phase CD-type superconducting cable, the inductance of superconducting cable system would be decreased due to the current of shield part of superconducting cable, which is opposite direction and nearly equal value with respect to main superconductor. However, when the shield circuit system is operated in shorted state, shield current decreases faulted ground current and give effects to power system protection scheme. This study examines the phenomena of single line to ground fault case in above mentioned system using the EMTDC program and discusses the right operation method of superconducting shield.

2K-H형 I 형식 차동기어장치와 V-belt 전동장치를 결합한 무단변속기의 개발 (Development of CVTs Composed of a 2K-H I Type Differential Gear Unit and a V-belt Drive)

  • 김연수;최상훈
    • 대한기계학회논문집A
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    • 제26권6호
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    • pp.1060-1068
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    • 2002
  • Compound continuously variable transmission(CVT) mechanisms are proposed, which can offer a backward mode, a geared neutral, an underdrive mode and an overdrive mode. They are composed of a 2K-H I type differential gear unit, a V-belt type continuously variable unit(CVU), a few friction clutches and gears, and not required of a starting device as a torque converter. Compound CVT mechanisms developed here present two distinct operating modes which are a power circulation mode and a power split mode. The transition of two modes takes place at the particular CVU speed ratio. For these CVT mechanisms, performance analysis related to speed ratio, power ratio and efficiency are executed and proven by experimental studies.

220kV 1C*2000SQ Slip-on Type EB-G 접속재 개발 (Development of 220kV 1C*2000SQ Slip-on Type EB-G Ass'y)

  • 김영택;김현주;김한화;박정기;김덕환;이강미
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1612-1613
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    • 2011
  • 초고압 XLPE 케이블용 접속재는 고도의 신뢰성과 안정성이 요구되며, 국내외적으로 제품 경량화, 시공 공정 단순화 등 고객의 다양한 요구가 점차 증가하는 추세이다. 당사는 220kV 1C${\times}$2000SQ XLPE 케이블 접속재인 EB-G(가스중 종단접속함)를 Slip-on Type으로 적용함으로써 고객의 요구에 맞춰 단순한 내부절연구조에서 비롯되는 전기적 특성의 안정성과 신속한 시공성을 확보하게 되었다. 본고에서는 220kV급 접속재인 가스중종단접속함(EB-G)의 설계, 개발시험에 관하여 소개하고자 한다.

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플라이애시 혼입 콘크리트의 내구성 평가 (Durability Evaluation of concrete using fly ash)

  • 조명석;송영철;류금성;고경택;김성욱;이장화
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2002년도 봄 학술발표회 논문집
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    • pp.755-760
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    • 2002
  • The concrete structures in marine environment has been used type V cement(sulfate-resisting Portland cement), but according to the study results reported recently, the question has been raised for effect of the resistance to salt attack of the concrete using type V cement. It is increased the demands on the use of mineral admixtures such as fly ash, ground granulated blast-furnace slag instead of type V cement in order to improve the durability of concrete structures. Therefore, this study focused on the durability evaluation of concrete containing fly ash under marine environment, and the tests such as salt attack, carbonation, sulfate attack, and freezing-thawing were performed. Test results showed t]hat the resistance to salt attack, sulfate attack and freezing-thawing was improved, and the carbonation was in some disadvantage compared with normal concrete. Nevertheless, the durability of fly ash concrete would be maintained during the service life of structures.

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MULTIPLE SOLUTIONS FOR EQUATIONS OF p(x)-LAPLACE TYPE WITH NONLINEAR NEUMANN BOUNDARY CONDITION

  • Ki, Yun-Ho;Park, Kisoeb
    • 대한수학회보
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    • 제53권6호
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    • pp.1805-1821
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    • 2016
  • In this paper, we are concerned with the nonlinear elliptic equations of the p(x)-Laplace type $$\{\begin{array}{lll}-div(a(x,{\nabla}u))+{\mid}u{\mid}^{p(x)-2}u={\lambda}f(x,u) && in\;{\Omega}\\(a(x,{\nabla}u)\frac{{\partial}u}{{\partial}n}={\lambda}{\theta}g(x,u) && on\;{\partial}{\Omega},\end{array}$$ which is subject to nonlinear Neumann boundary condition. Here the function a(x, v) is of type${\mid}v{\mid}^{p(x)-2}v$ with continuous function $p:{\bar{\Omega}}{\rightarrow}(1,{\infty})$ and the functions f, g satisfy a $Carath{\acute{e}}odory$ condition. The main purpose of this paper is to establish the existence of at least three solutions for the above problem by applying three critical points theory due to Ricceri. Furthermore, we localize three critical points interval for the given problem as applications of the theorem introduced by Arcoya and Carmona.