• The Journal of the Petrological Society of Korea
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• v.6 no.2
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• pp.133-149
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• 1997

In the metapelites around the Ogcheon granite, the metamorphic grade increases from the biotite zone through the andalusite zone to the sillimanite zone towards the intrusion contact. In the metabasites around the Boeun granite, the metamorphic grade increases from transitional zone between the greenchist and amphibolite facies through the amphibolite facies to the upper amphibolite facies towards the intrusion contact. In the Doiri area locating near the intrusion contact of the Boeun granite, sillimanite- and andalusite-bearing metapelites are found with in 500 m away from the contact. The evidence described above indicates that the Ogcheon and Boeun granites caused low-P/T type contact metamorphism to the country rocks. The P-T condition of contact metamorphism due to the intrusion of the Ogcheon granite is $540{\pm}40^{circ}C, 2.8{\pm}0.9$ kb. The temperature condition of contact metamorphism due to the intrusion of the Boeun granite is $698{\pm}28^{\circ}C$. The wide compositional range of amphibole and plagioclase in the metabasites around the Boeun granite is due to the immisibility gab of amphibole and plagioclase and unstable relict composition resulted from an incomplete metamorphic reaction. The compositional range of stable amphibole and plagioclase decreases as a metamorphic grade increases due to a close of immiscibility gab. The thermal effect of contact metamorphism due to the intrusion of the Ogcheon and Boeun granites, are calculated using the CONTACT2 program based on a two dimensional finite difference method. In order to estimate the thermal effect of an introduced pluton, a circle with 10 km diameter and a triangle with 20 km side are used for the intrusion geometries of the Ogcheon granite and the Boeun granite, respectively. The results from the field and modeling studies suggest that the intrusion temperatures of the Ogcheon granite close to $800^{\circ}C$ and the intrusion temperature of the Boeun granite is higher than $1000^{\circ}C$. However, the intrusion temperatures can be lower than the suggested temperature, if the geothermal gradient prior to the intrusion of the Ogcheon and Boeun granites was higher than the normal continental grothermal gradient.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.375-375
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• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of the Korean earth science society
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• v.35 no.4
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• pp.215-224
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• 2014

Data assimilation effect of mobile rawinsonde observation was evaluated using Unified Model (UM) with a Three-Dimensional Variational (3DVAR) data assimilation system during the intensive observation program of 2013 summer season (rainy season: 20 June-7 July 2013, heavy rain period: 8 July-30 July 2013). The analysis was performed by two sets of simulation experiments: (1) ConTroL experiment (CTL) with observation data provided by Korea Meteorological Administration (KMA) and (2) Observing System Experiment (OSE) including both KMA and mobile rawinsonde observation data. In the model verification during the rainy season, there were no distinctive differences for 500 hPa geopotential height, 850 hPa air temperature, and 300 hPa wind speed between CTL and OSE simulation due to data limitation (0000 and 1200 UTC only) at stationary rawinsonde stations. In contrast, precipitation verification using the hourly accumulated precipitation data of Automatic Synoptic Observation System (ASOS) showed that Equivalent Threat Score (ETS) of the OSE was improved by about 2% compared with that of the CTL. For cases having a positive effect of the OSE simulation, ETS of the OSE showed a significantly higher improvement (up to 41%) than that of the CTL. This estimation thus suggests that the use of mobile rawinsonde observation data using UM 3DVAR could be reasonable enough to assess the improvement of prediction accuracy.

• Korean Journal of Food Science and Technology
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• v.23 no.1
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• pp.88-92
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• 1991

To analyze the effects of the system parameters on the target parameters, which include the amount of water evaporation, water solubility index(WSI) and water absorption index(WAI), test trials of fractional factorial design of the three process variables at three levels were carried out for corn grit with a laboratory twin-screw extruder with three different screw configurations. The system parameters collected from the trials, such as extrusion temperature, specific mechanical energy input(SME) and mean residence time(RT), were showed the ranges of $129{\sim}182^{\circ}C$, $67{\sim}163\;kwh/ton$ and $12{\sim}34\;sec$, respectively. Within these ranges of the system parameters, the target parameters were able to be quantified by using multiple regression equations. The correlation of results with the system parameters blocked by the screw configuration as dependent variables, yield correlation coefficients above 0.90, and the correlation using the system parameters obtained from whole experiment system as the dependent variables yield correlation coefficients around 0.80. The functional relationship, which can be quantified by second order polynomial regression equation with only two system parameters within necessary degree of accuracy, can he graped in three dimensional surface response and contour diagrams.

• Asian Journal of Atmospheric Environment
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• v.6 no.1
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• pp.53-66
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• 2012

A comparison of analytical approaches for Levoglucosan ($C_6H_{10}O_5$, commonly formed from the pyrolysis of carbohydrates such as cellulose) and used for a molecular marker in biomass burning is made between the four different analytical systems. 1) Spectrothermography technique as the evaluation of thermograms of carbon using Elemental Carbon & Organic Carbon Analyzer, 2) mass spectrometry technique using Gas Chromatography/mass spectrometer (GC/MS), 3) Aerosol Mass Spectrometer (AMS) for the identification of the particle size distribution and chemical composition, and 4) two dimensional Gas Chromatography with Time of Flight mass spectrometry (GC${\times}$GC-TOFMS) for defining the signature of Levoglucosan in terms of chemical analytical process. First, a Spectrothermography, which is defined as the graphical representation of the carbon, can be measured as a function of temperature during the thermal separation process and spectrothermographic analysis. GC/MS can detect mass fragment ions of Levoglucosan characterized by its base peak at m/z 60, 73 in mass fragment-grams by methylation and m/z 217, 204 by trimethylsilylderivatives (TMS-derivatives). AMS can be used to analyze the base peak at m/z 60.021, 73.029 in mass fragment-grams with a multiple-peak Gaussian curve fit algorithm. In the analysis of TMS derivatives by GC${\times}$GC-TOFMS, it can detect m/z 73 as the base ion for the identification of Levoglucosan. It can also observe m/z 217 and 204 with existence of m/z 333. Although the ratios of m/z 217 and m/z 204 to the base ion (m/z 73) in the mass spectrum of GC${\times}$GC-TOFMS lower than those of GC/MS, Levoglucosan can be separated and characterized from D (-) +Ribose in the mixture of sugar compounds. At last, the environmental significance of Levoglucosan will be discussed with respect to the health effect to offer important opportunities for clinical and potential epidemiological research for reducing incidence of cardiovascular and respiratory diseases.

• Journal of the Korean earth science society
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• v.28 no.4
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• pp.393-404
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• 2007

The purpose of this study was to identity scientific models included in the Earth domain of the $10^{th}$ grade science textbooks. Three earth science-related chapters in each of 11 trade books were analyzed. A framework was developed and used to classify a scientific model from three different perspectives: medium of representation, method of representation, and mobility of a model. Results showed that the science textbooks utilized domain-specific models in which the nature of sub-areas of earth science was embedded. That is, the unit of 'Change of the Earth' included many iconic models that represented the inaccessible inner structure of the earth and the movement of the tectonic plates. These were also two-dimensional pictorial and static models. In the chapter of 'Atmosphere and Oceans', symbolic and diagrammatic models were dominant in use, which included weather maps and contour line graphs of sea surface temperature and salinity. The unit of 'Solar System and Galaxies' showed the highly frequent use of iconic and analogical models for the large-scale celestial objects and their movements. Implications for earth science education and relevant research were discussed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.2
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• pp.161-170
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• 2012

There are many factors to consider when attempting to improve the efficiency of fuel cell operation, such as the operation temperature, humidity, stoichiometry, operation pressure, geometric features, etc. In this paper, the effects of the operation pressure were investigated to find the current density and water saturation behavior on a cross section designated by the design geometry. A two-dimensional geometric model was established with a gas channel that can provide $H_2$ to the anode and $O_2$ and water vapor to the cathode gas diffusion layer (GDL). The results from this numerical modeling revealed that higher operation pressures would produce a higher current density than lower ones, and the water saturation behavior was different at operation pressures of 2 atm and 3 atm in the cathode GDL. In particular, the water saturation ratios are higher directly below the collector than in other areas. In addition, this paper presents the dependence of the velocity behavior in the cathode on pressure changes, and the velocity fluctuations through the GDL are higher in the output area than in inlet area. This conclusion will be utilized to design more efficient fuel cell modeling of real fuel cell operation.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.