• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1205-1208
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• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• Journal of Power Electronics
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• v.16 no.4
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• pp.1256-1267
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• 2016

Distributed stray inductance exerts a significant influence on the turn-off voltages of power switching devices. Therefore, the design of low stray inductance bus bars has become an important part of the design of high-power converters. In this study, we first analyze the operational principle and switching transient of a T-type converter. Then, we obtain the commutation circuit, categorize the stray inductance of the circuit, and study the influence of the different types of stray inductance on the turn-off voltages of switching devices. According to the current distribution of the commutation circuit, as well as the conditions for realizing laminated bus bars, we laminate the bus bar of the converter by integrating the practical structure of a capacitor bank and a power module. As a result, the stray inductance of the bus bar is reduced, and the stray inductance in the commutation circuit of the converter is reduced to more than half. Finally, a 10 kVA experimental prototype of a T-type converter is built to verify the effectiveness of the designed laminated bus bar in restraining the turn-off voltage spike of the switching devices in the converter.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.197-204
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• 2014

In this paper an Improved Zero Voltage Zero Current Pulse Width Modulation Forward converter which employs a simple resonance snubber circuit is introduced. A simple snubber circuit consists of a capacitor, an inductor and two diodes. In proposed converter, switch Q1 operates at ZCS turn-on, and ZVS turn-off conditions and all-passive semiconductor devices operate at ZVZCS turn-on and turn-off state. The proposed converter is analyzed and various operating modes of the ZVZCS-PWM forward converter are discussed. Analysis and design considerations are presented and the prototype experimental results of a 100w (40 V/2.5A) proposed converter operating at 30 KHz switching frequency confirm the validity of theoretical analysis.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.607-612
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• 1994

The static and dynamic model of IGBT for the SPICE simulation has been successfully developed. The various circuit model parameters are extracted from the I-V and C-V characteristics of IGBT and implemented into our model. The static model of IGBT consists of the MOSFET, bipolar transistor and series resistance. The parameters to be extracted are the threshold voltage of MOSFET, current gain $\beta$ of bipolar transistor, and the series resistance. They can be extracted from the measured I-V characteristics curve. The C-V characteristics between the terminals are very important parameters to determine the turn-on and turn-off waveform. Especially, voltage dependent capacitance are polynomially approximated to obtain the exact turn-on and turn-off waveforms. The SPICE simulation results employing new model agree well with the experimental values.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.4
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• pp.311-317
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• 1999

In this paper, the resonant inverter of SEPP-LCC type is proposed and described the operating principle. As adding t two capacitors in the switching devices in parallel. the proposed inverter can reduce switching losses. noise and voltage s stress at Turn-on and Turn-off. The analysis of the proposed circuit are described by using the normalized parameters. The data of design are got by the characteristic values and an example of the design's method is proposed. In addition. t the justification of theoretical analysis is verified by comparing to the experimental waveforms.

• Proceedings of the KIPE Conference
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• 2009.11a
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• pp.155-157
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• 2009

This paper proposed a soft switching boost converter with an auxiliary circuit, and a modified control method for reduction of switch stress. The proposed converter applies an auxiliary circuit, which is added to the conventional boost converter and used to achieve soft switching for both a main switch and an auxiliary switch. The auxiliary circuit consist of a resonant inductor and two capacitors, an auxiliary switch. The main switch is operated ZVS turn-on, turn-off also auxiliary switch is operated ZCS turn-on, ZVS turn-off. The proposed soft switching boost converter has lower switch loss and higher efficiency than conventional soft switching boost converter.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.487-488
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• 2010

This paper proposes a soft switching boost converter with an auxiliary circuit. This circuit helps a main switch operate as a soft switching. The main switch operates ZVS turn-on and ZVS turn-off. And the auxiliary switch operates ZCS turn-on and ZVS turn-off. In this paper, operation modes are analyzed and soft switching operation is verified through simulations.

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.3
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• pp.397-403
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• 2012

This paper describes a control method of turn-on/off angles to improve the efficiency of the switched reluctance generator(SRG) with a power closed-loop control system, and the inner-loop of the system is current hysteresis control. The SRG control system is constituted by the PI power controller and the two-level current hysteresis controller. By measuring and analyzing the system losses of different reference powers, speeds and turn-on/off angles, selection strategy of optimal turn-on/off angles is discussed. The proposed method is simple, reliable, and easy to achieve.

• Proceedings of the KIEE Conference
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• 1999.11b
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• pp.358-360
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• 1999

This paper presents a new soft-switching partial series resonant DC/DC converter (PSRC) with zero-voltage on/off simultaneously, suitable for application in the high power and high frequency switching. The proposed converter has not only advantages of the conventional PSRC but also zero-voltage turn-on and turn-off of the main switches for the entire load ranges by adding the auxiliary circuit, and zero-voltage-switching (ZVS) turn-on of the auxiliary switches. The operation principles of the new converter are explained in detail and the several interesting simulation and experimental results verify the validity of the proposed circuit.