• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.263-266
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• 1990

In order to high-respone and high-reliability of devices, it depended upon how we can increase the high-frequency of the Inverter, UPS and it's application. but using high-frequency of self turn-off devices, it is important to reduce switching device loss and spike voltage of turn off. This paper proposed new methode about computer simulation of device loss also experimental results with switching device characteristic are presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.1 no.1
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• pp.38-46
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• 1996

The commutation operation of the current source converter for switched reluctance motor drives is analyzed in this paper. The commutation operation in the current source converter consists of two modes. At turn-off of phase switch, the phase current decreases sinusoidally, and the sum of two phase currents during commutation period is constant. At this time, the capacitor voltage increases quickly with changing polarity and decreases slowly when another phase switches turn on or off. Frequency of step-down DC chopper in the current source converter is low because of the dump such as BJTs and GTOs are possible as phase switches instead of Power MOSFET and IGBTS. They may result in reductions of conduction losses and manufacturing cost in the current source converter comparing to the voltage source converter of SRM.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2446-2452
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• 2009

A Ceramic Metal-halide lamp is achieved by adding multiple metals to a basic mercury discharge. Because the vapor pressure of most metals is very much lower than mercury itself, metal-halide salts of the desired metals, having higher vapor pressures, are used to introduce the material into the basic discharge. The metal compounds are usually polyatomic iodides, which vaporize and subsequently dissociate as they diffuse into the bulk plasma. Metals with multiple visible transitions are necessary to achieve high photometric efficiency and good color. Compounds of Sc, Dy, Ho, Tm, Ce, Pr, Yb and Nd are commonly used. The maximum visible efficacy of a Ceramic Metal Halide lamp, under the constant of a white light source, is predicted to be about 450lm/W. This is controlled principally by the chemical fill chosen for a particular lamp. Current these lamps achieve 130lm/W and these life time are the maximum 16,000[hr]. So factors of performance lower are necessary to improve lamp performance. In this paper, we analyzed factors of performance lower by accelerated deterioration test. The lamp was operated with short duration turn-on/turn-off procedure to enhance the effect due to electrode sputtering during lamp ignition. The tested lamp that was operated with a longer turn-on/off(20/20 minutes) showed blackening, changed distance between electrodes and lowered color rendering & color temperature by losses of Dy at 421.18nm, I at 511nm, T1 at 535nm and Na at 588nm compared with the new lamp.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.12
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• pp.632-640
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• 2003

In conventional Zero-Voltage-Transition(ZVT) PWM converters, zero-voltage turn-on and turn-off for main switch without increasing voltage/current stresses is achieved at a fixed frequency. The switching loss, stress, and noise, however, can't be minimized because they adopt auxiliary switches turned off under hard-switching condition. In this paper, new ZVS-PWM converters of which both active and passive switches are always operating with soft-switching condition are proposed. Therefore, the proposed ZVS-PWM converters are most suitable for avionics applications requiring high-power density. Breadboarded ZVS-PWM boost converters using power MOSFET are constructed to verify theoretical analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.312-315
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• 2003

Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

• Journal of Power Electronics
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• v.11 no.3
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• pp.285-293
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• 2011

This paper proposes two SRM driving systems using a variable dc-link voltage controlled by a single-phase inverter. Two SRM converter topologies of a half bridge type and a full bridge type are proposed according to the power circuits of an inverter. The phase current can be controlled by means of a PWM controller at the inverter, and the turn-on/off angle at the phase switches can be controlled by a position sensor at the converter in the drive system. The inverter acts as a peak-current limiter if the transient current exceeds its maximum value. SRMs using the proposed topologies maintain high efficiency due to energy regeneration after the turn-off of power switches. The operational modes of the proposed topologies are verified by simulation and experimental results.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.198-206
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• 2017

This paper presents a novel scheme to estimate the rotor position of a single-phase hybrid switched reluctance motor (HSRM). The back-EMF generated by the permanent magnet (PM) field whose performance is motor parameter independent is adopted as an index to achieve the sensorless control. The differential value of back-EMF is calculated by hardware and processed by DSP to capture a fixed rotor position four times for every mechanical cycle. In addition, to accomplish the normal starting of HSRM, the determination method of the turn-off time position at the first electrical cycle is also proposed. In this way, a sensorless operation scheme with adjustable turn on/off angle can be achieved without substantial computation. The experimental verification using a prototype drive system is provided to demonstrate the viability of the proposed position estimation scheme.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.777-780
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• 1993

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.