• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.8
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• pp.1356-1361
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• 2008

A switched reluctance generator(SRG) has simple magnetic structure, and needs simple power electronic driving circuit. But, a SRG are no windings or permanent magnets on the rotor, and there are concentrated windings placed around each salient pole on the stator. Because of the characteristics of time-sharing excitation, the control of SRG is very flexible. And there are several parameters for controlling SRG, such as switch turn-on angle, switch turn-off angle, and exciting voltage and controlling mode, all these will affect the generation greatly. A SRG has positive torque at increasing inductance region and negative torque at decreasing inductance region. In this paper, we studied characteristics about the switch turn-on and off angles according to switch method for constant output voltage of the fixed speed SRG. It is the acoustic noise and torque ripple characteristics. Characteristics for a switch angle and method are presented by experiment using a 50W SRG with 12/8 poles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.3
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• pp.222-230
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• 1998

This paper proposes a new gate drive circuit for high power IGBTs which can reduce the harmful effect of reverse recovery current at turn-on and actively suppress the overvoltage across the driven IGBT at turn-off without a snubber circuit. The turn-on scheme decreases the rising rate of the collector current by inereasing the input capacitance at turn-on transient when the gate-emitter voltage goes above threshold voltage. It results in soft transient of the reverse recovery current with no variation in turn-on delay time. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage can be limited much effectively at the fault collector current. Experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.3
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• pp.240-245
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• 2004

This paper presents a Switched Reluctance Motor(SRM) drive using the self-tuning control method to achieve the maximum torque. SRM has the difficulty to research it by an analytic method and to control the speed End torque because of the high nonlinearity. So, in this paper, the self-tuning control method is applied to relevantly controlling turn-on/off angle to operate at the maximum torque. Also, the feedback signals to control the turn-on/off angle are the encoder pulse and the increment of phase current. At first, n adequate turn-off angle is searched by itself and then a turn-on angle is done. As the relationship between turn-on and him-off angle is mutual dependent, the turn-on/off angle is controlled by a real time self-tuning control method in order to maintain the maximum torque. The proposed self-tuning Algorithm is verified by experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1205-1208
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• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• Proceedings of the KSR Conference
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• 2007.11a
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• pp.1438-1444
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• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• Journal of Power Electronics
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• v.18 no.3
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• pp.892-901
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• 2018

SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

• Korean Journal of Applied Biomechanics
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• v.16 no.2
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• pp.65-73
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• 2006

The aim of this study was to find out the differences of Kinematics factors from touching down the vaulting board to landing when techniques of 1/1Turn and Tucked were performed on the old vaulting horse and on the new vaulting table. Three national representative men gymnasts were sampled for this study. Three dimension motion analyses by means of six Sony PD-150 video cameras with the velocity of 60 fps were used As a result of analyzing the kinematic data from two kind of vaulting table, the following conclusions were made. 1. The performing time from taking off the vaulting horse to landing(phase 4) in the 1/1 Turn technique on the new vaulting table was significantly longer than that of the old vaulting horse, while the time from contacting to taking off the vaulting horse on the new vaulting table was shorter than that of the old vaulting horse in both and the Tucked techniques. 2. The vertical release COG velocity was faster on the new vaulting table compare to the old vaulting horse in the all kind technique. However the horizontal release COG velocity of the 1/1 Turn technique was faster a little in the old vaulting horse compare to the new vaulting table.