• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.71-74
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• 2006

A new multi-output LLC resonant converter is proposed for high efficiency and low cost plasma display panel (PDP) power module. In the proposed converter, zero-voltage (ZV) turn-on of the primary MOSFETs and zero-voltage (ZC) turn-on and turn-off of the secondary diodes are guaranteed in the overall input voltage and output load ranges. In addition, the primary MOSFETs and the secondary diodes have the low voltage stresses clamped to input and the output voltages, respectively. Therefore, the proposed converter shows the high efficiency due to the minimized switching and conduction losses. Moreover, by employing the transformer with multiple secondary windings, the proposed converter can have multiple outputs, which show the great crossregulation characteristics. Therefore, the proposed converter is suitable for high efficiency and low cost PDP power module.

• 기술사
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• 제33권1호
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• pp.94-105
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• 2000

The purpose of this paper is to obtain the improved reliability and optimal control of the half-bridge inverter for induction heating system. Parasitic inductance components within the inverter circuit for induction heating including the loss-less turn-off snubber capacitor considerably affect stable operation and noise level of the system. This paper analyzes the effect of the inductance in detail and presents a new snubber configuration suitable for the half-bridge inverter to effectively reduce it. In the half-bridge inverter for induction heating the capacity of the loss-less snubber capacitor determines the switching losses because the zero voltage turn-on switching is used. However, the increase of the capacitor is limited by the system specifications, so that it is not easy work to reduce the switching loss. To effectively overcome the limitation, this paper introduces an active auxiliary resonant circuit suitable for the half-bridge inverter circuit, which operates actively according to the variation of load condition. It is also one of the most important study issues for the half-bridge inverter driven induction heater that the development of optimal control scheme considering varied load condition should be achieved. The control strategy ensures a very stable operation of overall inverter system and zero voltage turn-on switching irrespective of sensitive load parameter variations, in particular, even under the non-magnetic materials.

• 전기전자학회논문지
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• 제24권1호
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• pp.260-268
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• 2020

본 논문에서는 스위칭 시 발생하는 턴-온 및 턴-오프 손실을 줄일 수 있는 LS-ZVS-LSTC를 이용한 D급 SEPP형 고주파 공진 인버터에 대해서 나타내고 있다. 본 논문에서 제안한 LS-ZVS-LSTC를 이용한 고주파 공진 회로의 해석은 무차원화 파라메타를 도입하여 범용성 있게 기술하였다. 또한 제안 인버터의 운전 특성은 무파원화 제어 주파수(μ), 무차원화 부하시정수(τ), 결합계수(κ) 등의 제어 파라메타를 이용하여 특성 평가를 수행하였다. 특성 평가를 통한 특성치를 토대로 1.8[kW] D급 SEPP형 LS-ZVS-LSTC 고주파 인버터 설계 기법의 일예를 제시하였으며, 이론 해석의 정당성은 실험을 통해 입증하였다.

• Journal of Electrical Engineering and Technology
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• 제2권1호
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• pp.89-97
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• 2007

This paper presents a new circuit topology of active edge resonant snubbers assisted half-bridge soft switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed half-bridge high frequency PWM inverter with a high frequency planar transformer link in addition to input DC busline side power semiconductor switching devices for PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC buslines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, a high switching frequency IGBTs can be actually selected in the frequency range of 60 kHz under the principle of soft switching. The performance evaluations of the experimental setup are illustrated practically. The effectiveness of this new converter topology is proved for such low voltage and large current DC-DC power supplies as DC bus feeding from a practical point of view.

• Journal of Power Electronics
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• 제7권3호
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• pp.181-190
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• 2007

This paper presents a novel circuit topology of a DC bus line series switch and parallel snubbing capacitor-assisted soft-switching PWM full-bridge inverter type DC-DC power converter with a high frequency planar transformer link, which is newly developed for high performance arc welding machines in industry. The proposed DC-DC power converter circuit is based upon a voltage source-fed H type full-bridge soft-switching PWM inverter with a high frequency transformer. This DC-DC power converter has a single power semiconductor switching device in series with an input DC low side rail and loss less snubbing capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge arms and DC bus line can achieve ZCS turn-on and ZVS turn-off transition commutation. Consequently, the total switching power losses occurred at turn-off switching transition of these power semiconductor devices; IGBTs can be reduced even in higher switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules can be realized at 60 kHz. It is proved experimentally by power loss analysis that the more the switching frequency increases, the more the proposed DC-DC power converter can achieve a higher control response performance and size miniaturization. The practical and inherent effectiveness of the new DC-DC converter topology proposed here is actually confirmed for low voltage and large current DC-DC power supplies (32V, 300A) for TIG arc welding applications in industry.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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• pp.399-402
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• 2006

This paper presents a new circuit topology of dc bus line switch-assisted half-bridge soft switching PWM inverter type dc-dc converter for arc welder. The proposed power converter is composed of typical voltage source half-bridge high frequency PWM inverter with a high frequency transformer link in addition to dc bus line side power semiconductor switching devices fer PWM control scheme and capacitive lossless snubbers. All the active power switches in the half-bridge arm and dc bus lines can achieve ZCS turn-on and ZVS turn-off commutation operation and consequently the total turn-off switching losses can be significantly reduced. As a result, a high switching frequency of using IGBTs can be actually selected more than about 20 kHz. The effectiveness of this new converter topology is proved for low voltage and large current dc-dc power supplies such as arc welder from a practical point of view.

• 전력전자학회논문지
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• 제7권4호
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• pp.346-352
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• 2002

본 논문에서는 정류용 다이오드의 역 회복시 발생하는 손실을 줄이기 위한 새로운 듀얼 모드로 동작하는 ZCS-PWM 승압형 컨버터를 제안한다 제안된 회로에서 각각의 스위치는 소프트 스위칭 조건에서 매 사이클마다 교번으로 스위칭 동작을 하고 스위치 $S_2$에 직렬로 공진형 인덕터 Lr을 달아서 스위칭 손실과 EMI 노이즈와 관련된 정류용 다이오드$(D, D_1)$의 역 회복 전류를 감소시켰다. 제안된 컨버터는 기존의 ZVT-PWM 컨버터$^{[2]}$에 수동 및 능동 소자를 더 이상 추가하지 않기 때문에 각 소자들이 받는 전류/전압 스트레스는 기존의 하드 스위칭 컨버터 같다. 본 논문에서는 제안된 회로의 동작을 분석하고 이를 바탕으로 제작 및 실험을 통해서 타당성을 입증하였다.

• 조명전기설비학회논문지
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• 제21권3호
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• pp.44-49
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• 2007

본 논문은 기존 컨버터에 보조 스위치와 공진 인덕터, 공진 커패시터, 두개의 다이오드를 추가하여 새로운 소프트 스위칭 액티브 스너버회로가 부가된 컨버터를 제안하였다. 제안한 컨버터는 공진 에너지 회생율을 최대화함으로써 전체적인 효율을 증가시켰으며, 모든 스위칭 소자들이 소프트 스위칭 조건에서 턴-온/턴-오프하여 스위칭 손실을 최소화하였다. 그리고 공진 에너지를 완전히 입력으로 회생시켜 전도손실을 저감시켰다. 이러한 결과는 시뮬레이션과 실험을 통하여 증명하였다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권4호
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• pp.179-187
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• 2001

In recent years, the switching source devices have the advantage of small, light and high reliability with the high-frequency. But, high-frequency switching has disclosed disadvantage of result from stress and turn-on and turn-off peak losses at the switching instant. Accordingly, in this paper propose ZVS-HB type high-frequency resonant DC/DC converter using soft switching technique (Zero-Voltage-Switching, Zero-Current-Switching) with safety operating of circuit at diving on inductive zone, through the circuit design example using the capacitor $C_3,\;C_4$ with soft switching function and division characteristic of resonant Capacitor C, $C_1,\;C_2$, and, the characteristic analysis of circuit is generally described using normalized parameters. Also, this paper certified a rightfulness of characteristic analysis in comparison with a theoretical values and a experimental values obtain from experiment using MOSFET.

• Journal of Electrical Engineering and Technology
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• 제11권3호
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• pp.592-601
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• 2016

This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a user-defined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.