• Journal of Power System Engineering
• /
• v.3 no.4
• /
• pp.57-62
• /
• 1999

The microaccelerometer using a tunnelling current effect concept has the potential of high performance, although it requires slightly complex signal-processing circuit for servo-system. The paddle of micro accelerometer is pulled to have the gap width of about 2nm which almost allows the flow tunnelling current. This paper demonstrates at capacitor of microaccelerometer the use of the coupled thermo-electric analysis for voltage, current, heat flux and Joule heating then tunnelling current flows. Two electrodes are applied to the microaccelerometer producing a unform difference of temperature gradient and electric potential between the paddle and the substrate.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.1
• /
• pp.247-253
• /
• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.17 no.2
• /
• pp.91-105
• /
• 2015

In the current work, a series of three-dimensional (3D) finite element analyses have been performed to study the effects of the locations of pile tips on the behaviour of single piles to adjacent tunnelling. In the numerical modelling, several key issues, such as tunnelling-induced pile head settlements, axial pile forces, interface shear stresses and apparent factors of safety have been studied. When the pile tips are inside the influence zone which considers the relative pile tip location with respect to the tunnel position, tunnelling-induced pile head settlements are larger than those computed from the greenfield condition. However, when the pile tips were outside the influence zone, an opposite trend was observed. When the pile tips were inside the influence zone, tunnelling-induced tensile pile forces developed; however, when the pile tips were outside the influence zone, tunnelling-induced compressive pile forces were mobilised, associated with larger settlements of the surrounding soil than the pile settlements. It has been shown that the increases in the tunnelling-induced pile head settlements have resulted in reductions of the apparent factor of safety by about 50% when the pile tips are inside the influence zone, therefore severly affecting the serviceability of piles. The pile behaviour, when considering the location of pile tips with regards to the influence zone, has been analysed in great detail by taking the tunnelling-induced pile head settlements, axial pile force and apparent factor of safety into account.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.5
• /
• pp.1670-1676
• /
• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

• Geomechanics and Engineering
• /
• v.21 no.2
• /
• pp.187-200
• /
• 2020

In the current work, a series of three-dimensional finite element analyses have been conducted to investigate the behaviour of pre-existing single piles in response to adjacent tunnelling by considering the tunnel face pressures and the relative locations of the pile tips with respect to the tunnel. Via numerical modelling, the effect of the face pressures on the pile behaviour has been analysed. In addition, the analyses have concentrated on the ground settlements, the pile head settlements and the shear stress transfer mechanism at the pile-soil interface. The settlements of the pile directly above the tunnel crown (with a vertical distance between the pile tip and the tunnel crown of 0.25D, where D is the tunnel diameter) with a face pressure of 50% of the in situ horizontal soil stress at the tunnel springline decreased by approximately 38% compared to the corresponding pile settlements with the minimum face pressure, namely, 25% of the in situ horizontal soil stress at the tunnel springline. Furthermore, the smaller the face pressure is, the larger the tunnelling-induced ground movements, the axial pile forces and the interface shear stresses. The ground settlements and the pile settlements were heavily affected by the face pressures and the positions of the pile tip with respect to the tunnel. When the piles were inside the tunnel influence zone, tensile forces were induced on piles, while compressive pile forces were expected to develop for piles that are outside the influence zone and on the boundary. In addition, the computed results have been compared with relevant previous studies that were reported in the literature. The behaviour of the piles that is triggered by adjacent tunnelling has been extensively examined and analysed by considering the several key features in substantial detail.

• Proceeding of EDISON Challenge
• /
• 2017.03a
• /
• pp.428-432
• /
• 2017

Silicon 기반 Metal-oxide-semiconductor field-effect transistor (MOSFET)의 크기가 감소함에 따라 silicon자체의 물성적 한계가 나타나고 있다. 이를 극복하고자 III-V 화합물 반도체가 채널소자로서 각광받고 있다. 본 연구에서는 III-V 화합물반도체 중 $In_xGa_{1-x}As$는 Indium 조성에 따른 전자구조 및 n-type MOSFET의 소자 특성을 본다. Indium의 조성이 증가함에 따라 subband의 개수와 간격이 증가하게 되어 Density of state가 감소하게 된다. 이로 인하여 Indium의 조성이 증가함에 따라 $In_xGa_{1-x}As$ 채널 MOSFET에서 상대적으로 Fermi level을 더 많이 상승시키게 되어 potential barrier를 얇아지게 만들며 또한 에너지에 따른 전류 밀도를 넓게 분포하도록 만든다. 이로 인하여 단채널에서는 In 조성이 증가함에 따라 direct source-to-drain tunnelling current이 증가하게 된다. 이로 인하여 In 조성의 증가에 따라 subthreshold swing과 ON-state current가 저하된다.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.22 no.1
• /
• pp.23-46
• /
• 2020

In the current work, a series of three-dimensional finite element analyses have been carried out to understand the behaviour of pre-existing single piles to adjacent tunnelling by considering the tunnel face pressures and the relative location of pile tips with respect to the tunnel. The numerical modelling has analysed the effect of the face pressures on the pile behaviour. The analyses concentrate on the ground settlements, the pile head settlements, the axial pile forces and the shear stress transfer mechanism at the pile-soil interface. The head settlements of the pile (the vertical distance between the pile and the tunnel: 0.25D, where D is the tunnel diameter) directly above the tunnel crown with the face pressure 50% of the in-situ horizontal soil stress at the tunnel springline decreased by about 38% compared to corresponding settlements with a face pressure 25% of the in-situ horizontal soil stress at the tunnel springline. Furthermore, it was found that the smaller the face pressure, the larger the tunnelling-induced ground movements and the axial pile forces were and the higher the degree of the shear strength mobilisation at the pile-soil interface. When the piles were outside the tunnel influence zone, compressive pile forces were developed due to tunnelling. It has been found that the ground settlements and the pile settlements are heavily affected by the face pressures and the position of the pile tip relative to the tunnel. In addition, the computed results have been compared with relevant studies previously reported in literature. The behaviour of the piles has been extensively examined and analysed by considering the key features in great detail.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.26 no.3
• /
• pp.169-189
• /
• 2024

In the current work, a series of three-dimensional finite element analyses have been carried out to understand the behaviour of pre-existing single piles and pile groups to adjacent Shield TBM tunnelling by considering various reinforcement conditions. The numerical modelling has analysed the effect of the pile cutting, ground reinforcement and pile cap reinforcement. The analyses concentrate on the ground settlements, the pile head settlements, the axial pile forces and the shear stress transfer mechanism at the pile-soil interface. In all cases of the pile tips supported by weathered rock, the distributions of shear stresses presented a similar trend. Also, when the pile tips were cut, tensile forces or compressive forces were induced on the piles depending on the relative positions of the piles. Furthermore, when the pile tips are supported by weathered rock, approximately 70% of the load is supported by surface friction, and only the remaining 30% is supported by the pile tip. Furthermore the final settlement of the piles without reinforcement showed approximately 70% more settlement than the piles for which ground reinforcement is considered. It has been found that the ground settlements and the pile settlements are heavily affected by the pile cutting and reinforcement conditions. The behaviour of the single pile and group piles, depending on the pile cutting, conditions of ground and pile cap reinforcement, has been extensively examined and analysed by considering the key features in great details.

• Journal of the Korean Ceramic Society
• /
• v.23 no.1
• /
• pp.44-50
• /
• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• Journal of Electrochemical Science and Technology
• /
• v.14 no.1
• /
• pp.21-30
• /
• 2023

This work presents a correlation between the behavior of formic acid oxidation (FAO) on various Bi-modified Pt(poly) disk electrodes and their morphologies observed on Bi-modified Pt(111) disk electrodes using electrochemical scanning tunneling microscopy (EC-STM) to understand the effects of Bi on Pt. To distinguish the FAO activities of Bi on Pt and plain Pt around Bi, additional Pt was intentionally deposited using two different routes: direct route and iodine route. In direct route, Pt was directly deposited on Bi islands and plain Pt sites around Bi islands, while in iodine route, Pt was exclusively deposited on Bi islands by protecting plain Pt sites with adsorbed iodine. Thus, a comparison of FAO performances on the two Bi-modified Pt electrodes with additional Pt (deposited in the different ways) disclosed a difference in FAO performances on plain Pt sites and Bi islands. When Bi coverage was ~0.04, the Bi deposits were scattered Bi islands enhancing FAO on Pt(poly). The additional Pt deposits using direct route increased FAO efficiency, while the ones using iodine route slightly decreased FAO current. The EC-STM observations indicated that Pt deposits around Bi islands, not on Bi islands, were responsible for the FAO current increase on Bi-modified Pt(poly). The FAO efficiency on Bi-modified Pt(poly) with a Bi coverage of ~0.25 increased by a factor of 2. However, the additional Pt deposits using the two Pt deposition routes notably decreased the FAO current. The dependency of FAO on Bi coverage was discussed in terms of electronic effect and ensemble effect.