• 한국정보보호학회:학술대회논문집
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• 한국정보보호학회 2006년도 하계학술대회
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• pp.486-489
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• 2006

최근까지 IPv4/IPv6 혼재 네트워크에서 서로 다른 네트워크에 존재하는 다수의 호스트들 간 통신이 가능하도록 지원해주는 기술에 대해 많은 연구가 진행되고 있으며, 대표적인 연구 분야로는 듀얼스택 메커니즘, 터널링 메커니즘, 그리고 프로토콜 변환 메커니즘이 있다. 본 논문에서는 듀얼스택과 터널링 메커니즘에서 예상되는 세 개의 공격에 대한 실험내용을 보이고자 한다. 실험 순서는 먼저 IPv4/IPv6 혼재 네트워크를 위한 실험망을 구축하고, 구축된 실험망에서 각 메커니즘별 공격 결과를 보임으로써 해당 공격이 발생할 수 있다는 실질적이면서 구체적인 근거를 제시하도록 구성되어 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.21-26
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• 2004

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.729-732
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• 2001

In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

• 대한전자공학회논문지
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• 제27권5호
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• pp.709-715
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• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• International Union of Geodesy and Geophysics Korean Journal of Geophysical Research
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• 제25권1호
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• pp.47-56
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• 1997

We present a theoretical study on how the plasmasphere responses to the sudden impulses in the magnetosphere. A mechanism on how Pi 2 pulsations are excited in the magnetosphere is also proposed. When impulsive disturbances associated with the substorm onset are assumed in the magnetotail, their propagation toward the sunward direction is investigated with a wave equation. The propagation speed undergoes serious variations owing to the existence of the plasmasphere, which results in various reflection and tunneling of traveling disturbances at the plasmapause. In order to examine the effect of the plasmapause on initial impulsive disturbances, we analytically solve the wave equation based on the model of reasonable Alfven speed profile. The exact solution shows that virtual resonant states exist inside the plasmaspheric cavity. We obtain the result that these unique modes strongly persist for arbitrary incoming impulses from the source in the magnetotail, which quantitatively corresponds to the signature of PI 2 pulsations.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.17-20
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• 2006

This paper presents of a new type of memory cell that could potentially replace both DRAM and flash memory. The proposed device cell operates by sensing the state of about 1,000 electrons trapped between unique insulating barriers in the channel region of the upper transistor. These electrons are controlled by a side gate on the transistor, and their state in turn controls the gate of the larger transistor, providing signal gain within the memory cell. It becomes faster and more reliable memory with lower operation voltage. Moreover, the use of a multiple tunnel junction (MTJ) fur the vertical transistor can significantly improve the data retention and operation speed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.173-173
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• 1999

The initial growth mode of Nb on Ag(110) in sub-monolayer region is studied using Scanning Tunneling microscopy. E-beam evaporated Nb is deposited onto the substrate at RT, and STM measurements are carried out at RT and 78K. With Nb being immiscible in bulk Ag, 3D islands formation begins at early stage and no particular ordered structure is found. At very low coverages, however, many interesting phenomena are observed in association with Nb clusters. Small Nb clusters as deposited displays very strong size dependence against atom-manipulation by the STM tip. In addition, the apparent corrugation of clusters below the critical size exhibits dramatic dependence on the imaging bias, disappearing completely over a wide range of the bias. Possible physical mechanism responsible for such behavior will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• 한국공작기계학회논문집
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• 제15권3호
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• pp.111-119
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• 2006

The ultra-precision stage is demanded for some industrial fields such as semiconductor lithography, ultra-precision machining, and fabrication of nano structure. A new stage was developed for those applications in order to obtain nano meter resolution. This stage consists of symmetric double parallelogram mechanism using flexure hinges. The mechanical properties such as strength of the flexures and deformations along the applied force were analyzed using FEM. The stage is actuated by a piezoelectric actuator and its movement was measured by a ultra-precision linear encoder. In order to improve positioning performance, a PID controller was designed based on the identified second order transfer function. Experimental results showed that this stage could be positioned within below 5 nm resolution irrespective of hysteresis and creep by the controller.