Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Structural and Electrical Properties of Vanadium Oxide Thin Films as $O_2/(Ar+O_{2})$ ratio

$O_2/(Ar+O_{2})$비에 따른 바나듐 산화막의 구조적, 전기적 특성

  • 최용남 (공주대학교 정보통신공학부) ;
  • 최복길 (공주대학교 정보통신공학부) ;
  • 최창규 (서울산업대학교 전기공학과) ;
  • 김성진 (경남대학교 전자공학과)
  • Published : 2001.07.01
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Abstract

In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

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