• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 한국환경보건학회지
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• 제19권4호
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• pp.9-13
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• 1993

This paper describes the impact of reflected sound in tunnel. The impact of reflected sound is obtained from making a comparision between measurements of tunnel and bridge. Sound level of tunnel is higher than that of bridge because reflected sound is generated in tunnel. Road traffic noise cannot be freely propagated because there are many buildings in urban. Therefore, a tunnel effect is generated in urban road. The impact of reflected sound is generated not only in tunnel, but also in urban road. This study provides the basic data for tunneling work and noise control strategy in urban road.

• Journal of Welding and Joining
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• 제33권2호
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• pp.14-17
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• 2015

Cleaning effect is well known mechanism of oxide layer removal in DCEP polarity. It is also known that DCEN has higher heat input efficiency than DCEP in GTAW process. Based on these two renowned arc theories, conventional variable polarity arc for aluminum welding was set up to have minimum DCEP and maximum DCEN duty ratio to achieve the highest heat input efficiency and weldability increase. However, recent several variable polarity GTA research papers reported unexpected result of proportional relationship between DCEP duty ratio and heat input. The authors also observed the same result then suggested combination of tunneling effect and random walk of cathode spot to fill up the gap between experiment and conventional arc theory. In this research, suggested combinational work of tunneling effect and rapid cathode spot changing is applied to another unexpected phenomena of variable polarity aluminum arc welding. From previous research, it is reported that wider oxide removal range, narrower bead width and shallower penetration depth are observed in thin oxide layered aluminum compared to the case of thick oxide. This result was reported for the first time and it was hard to explain the reason at that time therefore the inference by the authors was hardly acceptable. However, the suggested combinational theory successfully explains the result of the previous report in logical way.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2070-2078
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• 2014

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

• 한국자기학회지
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• 제17권5호
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• pp.194-197
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• 2007

극초진공 하에서 제작한 다양한 전이자성합금 박막에 대해 (Co-Fe, Co-Mn) 그 자기적 특성과 함께 Meservey-Tedrow 방식으로 측정한 스핀 편극치를 비교 분석 하였다. 약 20 nm 두께의 제작된 시료들은 표면 효과가 우세하리라는 기대와는 반대로 거의 벌크와 유사한 자기적 특성을 보였다. CoFe 또는 NiFe의 경우와는 달리 CoMn 경우 즉 강자성과 반자성 금속의 합금의 경우, 그 스핀 편극치가 그 자기모멘트에 의존하는 경향을 관찰 하였다. 이는 페르미 에너지 준위에서 터널링 현상에 대해 중요한 역할을 하는 sp-편력전자들과 고립되어 있는 d-전자 간의 교환상호작용(exchange interaction)에 의한 영향으로 이해할 수 있다.

• 한국재료학회지
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• 제27권1호
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Geomechanics and Engineering
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• 제37권1호
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• pp.73-84
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• 2024

Owing to the high strength and abrasive characteristics of cobble-boulders, cutters are easily worn and damaged during shield tunneling, making construction inefficient. In the present work, the stress on the ripper and scraper on the cutterhead was analyzed by the PFC3D-FLAC3D coupling model of shield tunneling to get insight into the performance of the cutterhead for cutting underground cobble and boulders. The numerical calculation results revealed that the increase in trajectory radius leads to a rising stress on the cutters, and the stress on the front cutting surface is greater than that on the back of the cutters. Moreover, the correlation between cutter wear and stress is revealed based on field measurement data. The distribution of the cutter stress is consistent with the cutter wear and breakage characteristics in actual construction, in which more extensive cutter stress is exhibited, extreme cutter wear appears, and more cutter breakage occurs. Finally, the relationship between the cutterhead opening area's layout and cutter wear distribution was investigated, indicating that the cutter wear extent is the most severe in the region where the radial opening ratio dropped sharply.

• 전기화학회지
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• 제3권2호
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• pp.104-108
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• 2000

전기화학에 있어서 전극 물질의 실제 거칠기(real roughness)를 아는 것은 매우 중요하다. 그러나 여러 가지 이유 때문에 전극 물질의 절대적인 거칠기를 아는 것은 불가능하다. 여기에서는 scanning tunneling microscopy (STM), 순환전압전류법을 이용하여 전기화학에서 자주 사용하는 다결정 금 전극의 거칠기를 구하여 Au(111), HOPG로부터 구한 거칠기와 비교해 보았다. STM으로부터 얻은 다결정 금전극의 거칠기는 $1.1(\pm0.1)$,산소의 탈착으로부터는 $2.4(\pm0.7)$, N-docosyl-N'-methyl viologen의 흡착으로부터 는 $1.6(\pm0.1)$이 얻어졌다.

• Journal of Electrochemical Science and Technology
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• 제11권4호
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• pp.330-335
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• 2020

Silicon surface nanostructures, which can be easily prepared by electrochemical etching, have attracted considerable attention because of its useful physical properties that facilitate application in diverse fields. In this work, electrochemical and electrochemical-scanning tunneling microscopic (EC-STM) techniques were employed to study the evolution of surface morphology during the electrochemical etching of Si(111)-H in a fluoride solution. The results exhibited that silicon oxide of the Si(111) surface was entirely stripped and then the surface became hydrogen terminated, atomically flat, and anisotropic in the fluoride solution during chemical etching. At the potential more negative than the flat band one, the surface had a tendency to be eroded very slowly, whereas the steps of the terrace were not only etched quickly but the triangular pits also deepened on anodic potentials. These results provided information on the conditions required for the preparation of porous nanostructures on the Si(111) surface, which may be applicable for sensor (or device) preparation (Nanotechnology and Functional Materials for Engineers, Elsevier 2017, pp. 67-91).

• Smart Structures and Systems
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• 제18권2호
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• pp.217-231
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• 2016

The present work aims to develop piezoresistive sensors of excellent piezoresistive response attributable to change in nanoscale structures of multi-wall carbon nanotube (MWNT) embedded in cement. MWNT was distributed in a cement matrix by means of polymer wrapping method in tandem with the ultrasonication process. DC conductivity of the prepared samples exhibited the electrical percolation behavior and therefore the dispersion method adopted in this study was deemed effective. The integrity of piezoresistive response of the sensors was assessed in terms of stability, the maximum electrical resistance change rate, and sensitivity. A composite sensor with MWNT 0.2 wt.% showed the lowest stability and sensitivity, while the maximum electrical resistance change rate exhibited by this sample was the highest (96 %) among others and even higher than those found in the literature. This observation was presumably attributed by the percolation threshold and the tunneling effect. As a result of the MWNT content (0.2 wt.%) of the sensor being near the percolation threshold (0.25 wt.%), MWNTs were close to each other to trigger tunneling in response of external loading. The sensor with MWNT 0.2 wt.% was able to maintain the repeatable sensing capability while sustaining a vehicular loading on road, demonstrating the feasibility in traffic flow sensing application.