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http://dx.doi.org/10.5370/JEET.2014.9.6.2070

Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation  

Roh, Hee Bum (school of Electronics Engineering, Kyungpook National University)
Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University)
Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University)
Bae, Jin-Hyuk (School of Electronics Engineering, Kyungpook National University)
Cho, Eou-Sik (Department of Electronics Engineering, Gachon University)
Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University)
Cho, Seongjae (Department of Electronics Engineering, Gachon University)
Kang, In Man (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of Electrical Engineering and Technology / v.9, no.6, 2014 , pp. 2070-2078 More about this Journal
Abstract
In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.
Keywords
Frequency response; Gate-all-around; Heterojunction; Tunneling field-effect transistor; Hetero-gate-dielectric; TCAD; Mixed-mode simulation;
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