• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1670-1676
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• 2014

This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.36-42
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• 2014

In this paper, an epsilon near zero (ENZ) tunneling circuit using a double-ridge rectangular waveguide (RWG) is proposed for the miniaturization of a waveguide component. The proposed ENZ channel and is located in the middle of the input-output RWG (IORWG). The ratio of the height to the width of the channel waveguide is very small compared to the IORWG. By properly adjusting the ridge dimensions, the tunneling frequency of the proposed ENZ channel can be lowered to near the cut-off frequency of the IORWG. For the proposed ENZ tunneling circuit, the approach adopted for extracting the effective permittivity, effective permeability;normalized effective wave impedance, and propagation constant from the simulated scattering parameters was explained. The extracted parameters verified that the proposed channel is an ENZ channel and electromagnetic energy is tunneling through the channel. Simulation and measurement results of the fabricated ENZ channel structure agreed.

• Tunnel and Underground Space
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• v.24 no.2
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• pp.120-130
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• 2014

Recently, a few mega projects of subsea tunneling are completed or ongoing or under planning stage all across the world. In Korea, subsea tunnels connecting to Japan and China have been considered in the past decades. At the same time, subsea tunnels connecting to domestic islands were planned with preliminary design concepts. Development and improvement of indigenous techniques regarding subsea tunneling are essential in light of current technical level in Korea and their future impact on tunneling industry. In this paper, distinct features of subsea tunnel and construction trend of subaqueous tunnels are analyzed via case studies. Also, case studies about incidents related to subsea tunneling and required techniques to secure safety are presented.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.271-274
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• 2010

We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.128-129
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• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• Geomechanics and Engineering
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• v.15 no.3
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• pp.823-831
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• 2018

The most important issue during shield TBM tunneling in soft ground formations is to appropriately control ground surface settlement. Among various operational conditions in shield TBM tunneling, the face pressure and backfill pressure should be the most important and immediate measure to restrain surface settlement during excavation. In this paper, a 3-D hydro-mechanical coupled FE model is developed to numerically simulate the entire process of shield TBM tunneling, which is verified by comparing with real field measurements of ground surface settlement. The effect of permeability and stiffness of ground formations on tunneling-induced surface settlement was discussed in the parametric study. An increase in the face pressure and backfill pressure does not always lead to a decrease in surface settlement, but there are the critical face pressure and backfill pressure. In addition, considering the relatively low permeability of ground formations, the surface settlement consists of two parts, i.e., immediate settlement and consolidation settlement, which shows a distinct settlement behavior to each other.

• Progress in Superconductivity and Cryogenics
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• v.16 no.1
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• pp.1-5
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• 2014

We calculated the resonance tunneling energy band in the BCS gap for Type-II superconductor in which periodic potential is generated by external magnetic flux. In this model, penetrating magnetic flux was assumed to be in a fixed lattice state which is not moving by an external force. We observed the existence of two subbands when we used the same parameters as for the $Nd_{1.85}Ce_{0.15}CuO_X$ thin film experiment. The voltages at which the regions of negative differential resistivity (NDR) started after the resonant tunneling ended were in a good agreement with the experimental data in the field region of 1 T - 2.2 T, but not in the high field regions. Discrepancy occurred in the high field region is considered to be caused by that the potential barrier could not be maintained because the current induced by resonant tunneling exceeds the superconducting critical current. In order to have better agreement in the low field region, more concrete designing of the potential rather than a simple square well used in the calculation might be needed. Based on this result, we can predict an occurrence of the electromagnetic radiation of as much difference of energy caused by the 2nd order resonant tunneling in which electrons transit from the 2nd band to the 1st band in the potential wells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.17-21
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• 2009

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.12
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• pp.2188-2194
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• 2008

Home network is the connection and communication of several electronic and electrical devices at hone with the integration of several technologies like Ethernet, wireless, phone line and power-line at the residential gateway to the internet. This internet based home network can be accessed from any part of the world through any device by any poison via internet. Since home network is developed for comfortable and safe life of home users, the information flow to/from home network needs to be private. Hence the remote access of the home network must be secured. This paper analyses two secure tunneling methods, voluntary and compulsory for L2TP(Layer Two Tunneling Protocol) based VPN(Virtual Private Network) for secure remote access of the home network.

• Geomechanics and Engineering
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• v.38 no.6
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• pp.633-645
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• 2024

Disc cutters, used as excavation tools for rocks in a Tunnel Boring Machine (TBM), naturally undergo wear during the tunneling process, involving crushing and cutting through the ground, leading to various wear types. When disc cutters reach their wear limits, they must be replaced at the appropriate time to ensure efficient excavation. General disc cutter life prediction models are typically used during the design phase to predict the total required quantity and replacement locations for construction. However, disc cutters are replaced more frequently during tunneling than initially planned. Unpredictable disc cutter replacements can easily diminish tunneling efficiency, and abnormal wear is a common cause during tunneling in complex ground conditions. This study aims to overcome the limitations of existing disc cutter life prediction models by utilizing machine data generated during tunneling to predict disc cutter wear patterns and determine the need for replacements in real-time. Artificial intelligence classification algorithms, including K-nearest Neighbors (KNN), Support Vector Machine (SVM), Decision Tree (DT), and Stacking, are employed to assess the need for disc cutter replacement. Binary classification models are developed to predict which disc cutters require replacement, while multi-class classification models are fine-tuned to identify three categories: no replacement required, replacement due to normal wear, and replacement due to abnormal wear during tunneling. The performance of these models is thoroughly assessed, demonstrating that the proposed approach effectively manages disc cutter wear and replacements in shield TBM tunnel projects.