• Title/Summary/Keyword: Tunneling

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Preparation of Atomically Flat Si(111)-H Surfaces in Aqueous Ammonium Fluoride Solutions Investigated by Using Electrochemical, In Situ EC-STM and ATR-FTIR Spectroscopic Methods

  • Bae, Sang-Eun;Oh, Mi-Kyung;Min, Nam-Ki;Paek, Se-Hwan;Hong, Suk-In;Lee, Chi-Woo J.
    • Bulletin of the Korean Chemical Society
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    • v.25 no.12
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    • pp.1822-1828
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    • 2004
  • Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

Methodology for real-time adaptation of tunnels support using the observational method

  • Miranda, Tiago;Dias, Daniel;Pinheiro, Marisa;Eclaircy-Caudron, Stephanie
    • Geomechanics and Engineering
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    • v.8 no.2
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    • pp.153-171
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    • 2015
  • The observational method in tunnel engineering allows the evaluation in real time of the actual conditions of the ground and to take measures if its behavior deviates considerably from predictions. However, it lacks a consistent and structured methodology to use the monitoring data to adapt the support system in real time. The definition of limit criteria above which adaptation is required are not defined and complex inverse analysis procedures (Rechea et al. 2008, Levasseur et al. 2010, Zentar et al. 2001, Lecampion et al. 2002, Finno and Calvello 2005, Goh 1999, Cui and Pan 2012, Deng et al. 2010, Mathew and Lehane 2013, Sharifzadeh et al. 2012, 2013) may be needed to consistently analyze the problem. In this paper a methodology for the real time adaptation of the support systems during tunneling is presented. In a first step limit criteria for displacements and stresses are proposed. The methodology uses graphics that are constructed during the project stage based on parametric calculations to assist in the process and when these graphics are not available, since it is not possible to predict every possible scenario, inverse analysis calculations are carried out. The methodology is applied to the "Bois de Peu" tunnel which is composed by two tubes with over 500 m long. High uncertainty levels existed concerning the heterogeneity of the soil and consequently in the geomechanical design parameters. The methodology was applied in four sections and the results focus on two of them. It is shown that the methodology has potential to be applied in real cases contributing for a consistent approach of a real time adaptation of the support system and highlight the importance of the existence of good quality and specific monitoring data to improve the inverse analysis procedure.

Simulation of shield TBM tunneling in soft ground by laboratory model test (실내모형시험을 통한 연약지반의 쉴드 TBM 터널굴착 모사)

  • Han, Myeong-Sik;Kim, Young-Joon;Shin, Il-Jae;Lee, Yong-Joo;Shin, Yong-Suk;Kim, Sang-Hwan
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.15 no.5
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    • pp.483-496
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    • 2013
  • This paper presents the shield TBM technology in soft ground tunnelling. In order to perform this study, a scale model test was carried out using the developed small scaled shield TBM machine. The various instrumentations were conducted during the simulation of tunnelling. In addition, the ground behavior due to the shield TBM operation parameters was measured during the simulation. Based on the simulation results, the stability of the ground was evaluated and the fundamental shield TBM tunnelling technique in the soft ground was suggested. In conclusion, design's reliability through laboratory small scale model test about Shield-TBM section was obtained, and both the improvement plan for safety during construction and the construction plan for securing airport runway's safety during tunnel passing by Shield-TBM propulsion were suggested.

Assessment of groundwater inflow rate into a tunnel considering groundwater level drawdown and permeability reduction with depth (터널굴착 중 지하수위 강하 및 깊이별 투수계수 변화를 적용한 지하수 유입량 변화 분석)

  • Moon, Joon-Shik;Zheng, An-Qi;Jang, Seoyong
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.19 no.2
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    • pp.109-120
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    • 2017
  • Groundwater seepage into a tunnel is one of the main causes triggering tunnel collapse and the consequent ground subsidence. Thus, it is important to estimate adequately the groundwater inflow rate and porewater pressure change during tunneling with time elapse. In current practice, Goodman's analytical solution (or image tunnel method) assuming homogeneous ground condition around a tunnel is commonly used for estimating groundwater inflow rate. However, the generally-used analytical solution for estimating groundwater inflow rate does not consider groundwater level drawdown and permeability change with depth, and the inflow rate can be overestimated in design phase. In this study, parametric study was performed in order to investigate the effect of groundwater level drawdown and permeability reduction with depth, and transient flow analysis was carried out for studying the inflow rate change as well as groundwater level and porewater pressure change around a tunnel with time elapse.

Shear strength behaviors of grouts under the blasting induced vibrations

  • Sagong, Myung;Choi, Il Yoon;Lee, Jun S.;Cho, Chung-sik
    • Geomechanics and Engineering
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    • v.21 no.2
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    • pp.207-213
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    • 2020
  • Umbrella Arch Method (UAM) often employed in the tunnel construction under poor rock mass conditions in Korea. Insertion of steel pipes at the periphery of the tunnel and infiltration of grouts along the pipes into the rock masses increases tunnel stability. There are two major effects of grouts expected at the tunnel face: 1) increase of face stability by enhancing the frictional resistance of discontinuities and 2) decrease of permeability along the rock masses. Increase of resistance and decrease of permeability requires a certain curing time for the grout. In Korea, we require 24 hours for curing of grout, which means no progress of excavation for 24 hours after infiltration of grouts. This step delays the tunnel construction sequences. To eliminate such inefficiency, we propose MTG (Method for Tunnel construction using Grouting technology), which uses extended length of steel pipes (14 m) compared to conventional pipe roof method (12 m). The merit of MTG is the reduction of curing time. Because of the approximately 2 m extension of the length of steel pipe, blasting can be done after infiltration of grouting. For this paper, we conducted experiments on the shear strength behaviors of grout infilled rock joint with elapsing of curing time and blasting induced vibration. The results show that blasting induced vibration under MTG does not influence the mechanical features of grout material, which indicates no influence on the mechanical behaviors of grout, contributing to the stability of tunnels during excavation. This result indicates that MTG is a cost effective and fast construction method for tunneling in Korea.

Switching Characteristics of Magnetic Tunnel Junction with Amorphous CoFeSiB Free Layer (비정질 CoFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성)

  • Hwang, J.Y.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
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    • v.16 no.6
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    • pp.276-278
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    • 2006
  • The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

Colossal magnetoresistance of double-ordered perovskite $Sr_{2}FeMoO_{6}$ ceramics and sputter-deposited films ($Sr_{2}FeMoO_{6}$ 소결체와 스퍼터링법으로 제조된 박막의 초거대자기저항현상에 관한 연구)

  • 이원종;장원위
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.1
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    • pp.36-41
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    • 2002
  • Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

Trap Generation during SILC and Soft Breakdown Phenomena in n-MOSFET having Thin Gate Oxide Film (박막 게이트 산화막을 갖는 n-MOSFET에서 SILC 및 Soft Breakdown 열화동안 나타나는 결함 생성)

  • 이재성
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.8
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    • pp.1-8
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    • 2004
  • Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

A Study of the Photoelectrochemical Effects of Squaraine Aggregate in Monolayer (스쿠알렌 집합체의 광전기화학적 효과에 관한 연구)

  • Young Soon Kim;Kock-Yee Law;David G. Whitten
    • Journal of the Korean Chemical Society
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    • v.37 no.7
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    • pp.642-647
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    • 1993
  • Monolayers of pure surfactant squaraine, DSSQ(4-distearyl amino phenyl-4'-dimethylaminophenylsquaraine), were deposited on $SnO_2 $ electrodes by the Langmuir-Blodgett film technique. The DSSQ film exhibits ${\lambda}_{max}$ at ∼530 nm. The absorption is significantly red-shifted from the solution of DSSQ (633 nm in chloroform), suggesting that the squaraine chromophores form aggregates in the LB film. The photogeneration of the squaraine aggregates is studied by measuring the photocurrents in photoelectrochemical cells consisting of the squaraine of the aggregates is found to parallel its absorption spectrum and quantum efficiency as high as 0.3% has been observed. While the photocurrent was attenuated exponentially when stearic acid layers (up to 8 layers) are inserted between the squaraine layer and the electrode, it is nearly extinguished when the squaraine layer is over-coated with 2 layers of stearic acid. A model for the observation is proposed and the roles of the electrolytes and oxygen on the photogeneration process will be discussed.

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Characteristics of Magnetic Tunnel Junctions Incorporating Nano-Oxide Layers (나노 산화층을 사용한 자기터널접합의 특성)

  • Chu, In-Chang;Chun, Byong-Sun;Song, Min-Sung;Lee, Seong-Rae;Kim, Young-Keun
    • Journal of the Korean Magnetics Society
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    • v.16 no.2
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    • pp.136-139
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    • 2006
  • The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250$^{\circ}C$ due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AlO/freelayer CoFe 3/capping CoNbZr 2 (nm), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.