• The Journal of the Convergence on Culture Technology
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• v.6 no.2
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• pp.515-520
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• 2020

CMOS used in digital circuit design technology has reached the limit of integration due to quantum tunneling. Quantum-dot cellular automata (QCA), which can replace this, has many advantages such as low power consumption and fast switching speed, so many digital circuits of CMOS have been proposed based on QCA. Among them, the multiplexer is a basic circuit used in various circuits such as D-flip-flops and resistors, and has been studied a lot. However, the existing multiplexer has a disadvantage that space efficiency is not good. Therefore, in this paper, we propose a new multilayered multiplexer using cell interaction and D-latch using it. The multiplexer and D-latch proposed in this paper have improved area, cell count, and delay time, and have excellent connectivity and scalability when designing large circuits. All proposed structures are simulated using QCADesigner to verify operation.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.93-99
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• 2009

The Internet Engineering Task Force (lETF)proposed the Mobile IPv6 protocol to provide host mobility in IPv6-based network and to offer a standardized technology. However, Mobile IPv6 (MIPv6) is not applied in actual network because of long handover latency and packet loss problems. Therefore, to compensate these drawbacks, many studies are in progress and FMIPv6 (Fast handover for Mobile IPv6) is one of the studies that has been proposed to supplement the shortcomings of MIPv6. But there are problems occurred in using router tunneling which causes packet loss and out of sequence problems. In this paper, we propose an Advanced Mobile IPv6 (AMIPv6) protocol to minimize the handover latency when Mobile Node frequently moves in each subnet. We compared the performance analysis of AMIPv6 handover latency with MIPv6 handover latency in the same network environment to prove that AMIPv6 is more efficient.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.6
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• pp.9-17
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• 2012

High-quality multimedia on the Internet has attracted attention because of its wide application area. IP multicast has been proposed as a solution to use efficient network resources in these services. However, IP multicast has not been commonly used due to a number of practical issues such as security and management. As an alternative, an overlay multicast routing which is performed in upper protocol layers on legacy networks without changing hardware has been presented. Yet, the maximum data transmission capacity of the overlay multicast is not sufficient for real time transmission of multimedia data. In this paper, we have implemented an overlay multicast engine on NetFPGA which allows us to perform packet replication and tunneling which need high-speed. In addition, we have implemented extra portions which need low-speed in software. From now on, we will progress research which increase the number of terminal spots which can be replicated by improvement and amplify throughputs by optimization.

• Journal of Periodontal and Implant Science
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• v.30 no.4
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• pp.793-803
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• 2000

Procedures for treatment of molar furcation invasion defects range from open flap debridement, apically repositioned flap surgery, hemisection, tunneling or extraction, to regenerative therapies using bone grafting or guided tissue regenerative therapy, or a combination of both. Several clinical evaluations using regenerative techniques have reported the potential for osseous repair of treated furcation invasions. Regenerative treatment of maxillary molars are more difficult due to the multiple root anatomy and multiple furcation entrances therefore, purpose of this study was to evaluated histologically self-curing glass-ionomer cement and light-curing glass-ionomer cement as a barrier in the treatment of a bi-furcated maxillary premolar. Five adult beagle dogs were used in this experiment. With intrasulcular and crestal incision, mucoperiosteal flap was elevated. Following decortication with 1/2 high speed round bur, degree II furcation defect was made on maxillary third(P3), forth(P4) and fifth(P5) premolar. 2 month later experimental group were self-curing glassionomer cement and light-curing glassionomer cement. After 4, 8 weeks, the animals were sacrificed by vascular perfusion. Tissue block was excised including the tooth and prepared for light microscope with Gomori's trichrome staining. Results were as follows. 1. In all experiment group, there were not epithelial down growth and glass ionomer cement were encapsulated connective tissue. 2. In 4 weeks experiment I group slighly infiltrated inflammatory cells but not disturb the new bone or new cementum formation. 3. In 8 weeks, experiment groups I, II were encapsulated fine connective tissue. 4. Therefore glass-ionomer cement filling to the grade III maxillary furcations with multiple root anatomy and multiple furcation entrances were possible clinical methods and this technique is useful method for Maxillary furcation involvement.

• Bulletin of the Korean Chemical Society
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• v.30 no.8
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• pp.1755-1759
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• 2009

Surface structure and molecular orientation of self-assembled monolayers (SAMs) formed by the spontaneous adsorption of tetrahydrothiophene (THT) and thiophene (TP) on Au(111) were investigated by means of scanning tunneling microscopy (STM) and carbon K-edge near edge X-ray absorption fine structure (NEXAFS) spectroscopy. STM imaging revealed that THT SAMs have a commensurate (3 ${\times}\;2\sqrt[]{3}$) structure containing structural defects in ordered domains, whereas TP SAMs are composed of randomly adsorbed domains and paired molecular row domains that can be described as an incommensurate packing structure. The NEXAFS spectroscopy study showed that the average tilt angle of the aliphatic THT ring and $\pi$-conjugated TP ring in the SAMs were calculated to be about $30^o\;and\;40^o$, respectively, from the surface normal. It was also observed that the $\pi$* transition peak in the NEXAFS spectrum of the TP SAMs is very weak, suggesting that a strong interaction between $\pi$-electrons and the Au surface arises during the self-assembly of TP molecules. In this study, we have clearly demonstrated that the surface structure and adsorption orientation of organic SAMs on Au(111) are strongly influenced by whether the cyclic ring is saturated or unsaturated.

• Journal of the Korean Geotechnical Society
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• v.21 no.5
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• pp.133-142
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• 2005

The research concentrates on improving the in-hole seismic probe, which has been developed in past five years, to be used in stiffness measurements of tunnel-face materials. The size of probe was reduced to be fit in 45-mm diameter holes (or BX) drilled by a jumbo-drill, which is used to drill holes to install explosives for tunneling. Also trigger system was improved by using a down-speeding motor for operating convenience and air packing system was replaced with a set of plate-springs to eliminate supply of compressed air. These modifications are to adjust the probe for the unfavourable environment inside of tunnels and to test without any further drilling cost. The probe and testing procedure were successfully adopted with horizontal holes drilled by a jumbo-drill at a tunnel-face to evaluate the stiffness of rock mass. The measured shear wave velocities can be used to estimate deformation properties of rock mass for tunnel analyses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.6B
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• pp.420-429
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• 2008

Currently, IEEE 802.11 Network could not support optimized tunneling scheme and buffering scheme based on movement detection to reduce multimedia data packet loss when an MN move from current subnet to new subnet during handover. It is because IEEE 802.11 did not transfer information of movement detection to AP. In this paper, we proposed new fast handover scheme by using advanced access point and optimized snoop protocol for network based Proxy Mobile IPv6 in IEEE 802.11 Networks. During handover, the proposed scheme reduces both the multimedia data packet loss rate and the packet reordering problems without changing MN's mobility stack in IEEE 802.11 Networks.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.