• Title/Summary/Keyword: Tunnel junction

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Simulation and Modelling of the Write/Erase Kinetics and the Retention Time of Single Electron Memory at Room Temperature

  • Boubaker, Aimen;Sghaier, Nabil;Souifi, Abdelkader;Kalboussi, Adel
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.2
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    • pp.143-151
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    • 2010
  • In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source $V_{Mem}$, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.

Study on the Fundamental Technologies of ATREX Engine

  • Sato, Tetsuya;Kobayashi, Hiroaki;Tanatsugu, Nobuhiro
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2004.03a
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    • pp.665-670
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    • 2004
  • This paper reviews the latest studies of the expander cycle Air Turbo Ramjet engine (ATREX) conducted in JAXA. First, a system analysis including the vehicle and trajectory was conducted to optimize the engine cycle and turbo-machine configuration. We selected the precooled turbo-jet cycle for a prototype engine using the near term technologies. Second, a system ground-firing test was conducted to verify a defrosting system for the precooler. Methanol injection with its particles atomization could compensate 80 % of pressure loss caused by the frost. Thirdly, a feasibility of carbon/carbon composites for the engine components was investigated by making complex shapes such as a heat exchanger and a plug nozzle. Basic technologies on the gas leakage, the junction and bonding were also studied. The end of the paper, some basic studies such as wind tunnel tests of a new type air inlet and a plug nozzle are described.

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Characterization of Superconducting Multi-layer Thin Films (초전도 다층박막의 특성 해석)

  • 이현수;한태희;임성훈;고석철;두호익;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.243-246
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    • 2000
  • The sputtering systems mainly consist of the three-target holder. The target and substrate were the on-axis type. The MgO and STO substrate were used for the deposition of each layer. The optimum conditions of single-layer thin film were investigated from the SEM images and the XRD patterns. Based on the above conditions, the multi-layer thin films such as YBaCuO/LaGaO/Au/Nb and YBaCuO/Au/Nb were fabricated. The crystalline, the electrical Properties, the energy gap structure and the characteristics of the tunneling barrier on the multi-layer thin film have been investigated and characterized.

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HBr 가스를 이용한 MgO 박막의 고밀도 반응성 이온 식각

  • Kim, Eun-Ho;So, U-Bin;Gong, Seon-Mi;Jeong, Ji-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.212-212
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    • 2010
  • 최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

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Magnetic Tunnel Junction based non-volatile Magnetoresistive RAM

  • Tehrani, S.;Durlam, M.;Naji, P.;DeHerrera, M.;Chen, E.Y.;Slaughter, J.M.;Rizzo, N.;Engel, B.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2000.09a
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    • pp.33-59
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    • 2000
  • Demonstrated uniform MR and resistance across 6 inch wafer, Demonstrated successful integration of MTJ and CMOS, Measured address access time of 8ns and read cycle time of 18ns for 256${\times}$2 arrays at 3.0V using a single transistor and MTJ for a cell

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Tunneling Characteristics in $Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$ Junctions as an Evidence for a d-wave Order Parameter Symmetry in $Bi_2Sr_2CaCu_2O_{8+\delta}$ Superconductors ($Bi_2Sr_2CaCu_2O_{8+\delta}$ 고온초전도체의 d-파 대칭성 증거로서의 $Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$접합 투과전도특성)

  • Chang, Hyun-Sik;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.2 no.2
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    • pp.65-70
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    • 2001
  • $Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

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Soft Magnetoresistive Properties of Conetic Thin Film Depending on Ta Buffer Layer (버퍼층 Ta에 의존하는 코네틱 박막의 연자성 자기저항 특성)

  • Choi, Jong-Gu;Hwang, Do-Guwn;Lee, Sang-Suk;Choi, Jin-Hyub;Lee, Ky-Am;Rhee, Jang-Rho
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.197-202
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    • 2009
  • The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

Microstructural and Magnetic Properties of CoFeB/MgO/CoFeB Based Magnetic Tunnel Junction Depending on Capping Layer Materials (Capping층 재료에 따른 CoFeB/MgO/CoFeB 자기터널접합의 미세구조와 자기저항 특성)

  • Chung, Ha-Chang;Lee, Seong-Rae
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.162-165
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    • 2007
  • We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

Magnetic Tunnel Junctions with AlN and AlO Barriers

  • Yoon, Tae-Sick;Yoshimura, Satoru;Tsunoda, Masakiyo;Takahashi, Migaku;Park, Bum-Chan;Lee, Young-Woo;Li, Ying;Kim, Chong-Oh
    • Journal of Magnetics
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    • v.9 no.1
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    • pp.17-22
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    • 2004
  • We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

Characteristics of Magnetic Tunnel Junctions Comprising Ferromagnetic Amorphous NiFeSiB Layers (강자성 비정질 NiFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성)

  • Hwang, J.Y.;Rhee, S.R.
    • Journal of the Korean Magnetics Society
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    • v.16 no.6
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    • pp.279-282
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    • 2006
  • Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.