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http://dx.doi.org/10.4283/JKMS.2009.19.6.197

Soft Magnetoresistive Properties of Conetic Thin Film Depending on Ta Buffer Layer  

Choi, Jong-Gu (Dept. of Eastern-western Biomedical Engineering, Graduation, Sangji University)
Hwang, Do-Guwn (Dept. of Eastern-western Biomedical Engineering, Graduation, Sangji University)
Lee, Sang-Suk (Dept. of Oriental Biomedical Engineering, Sangji University)
Choi, Jin-Hyub (Dept. of Eastern-western Biomedical Engineering, Graduation, Sangji University)
Lee, Ky-Am (Dept. of Oriental Biomedical Engineering, Sangji University)
Rhee, Jang-Rho (Department of Electronic Physics, Dankook University)
Abstract
The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.
Keywords
buffer layer; Conetic(NiFeCuMo) thin film; coercivity; soft magnetism; post annealing treatment;
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