• Proceedings of the Korean Magnestics Society Conference
• /
• 2012.11a
• /
• pp.65-66
• /
• 2012

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.15 no.6
• /
• pp.87-90
• /
• 1978

In previous VFC type A/D converter high linearity charateristics knave been achieved to several hundred kHz, and in the converter with maximum output frequency of several MHz, the conversion linearity is poor in upper frequency range. In this paper the problem of the extension of the output frequency to MHz range is studied in the following two view points: First, a tunnel diode VCO is used to increase the output frequency range to several MHz. Second, the linearity between the input voltage and the frequency of the output pulse is accomplished by using negative pulse feedback circuit. From the experimental results, it was followed that the linearity of the proposed converter was about 0.209 percent at the frequency of 3.7MHz.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.2
• /
• pp.91-97
• /
• 2009

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680$^{\circ}C$ and 700 $^{\circ}C$ on n-type GaAs (100) substrate with 2$^{\circ}$ and 6$^{\circ}$ tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

• Journal of the Korean Applied Science and Technology
• /
• v.20 no.2
• /
• pp.148-153
• /
• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.22 no.2
• /
• pp.185-196
• /
• 2020

Low-pressure sodium lamps, high-pressure sodium lamps and fluorescent lamps etc are mainly used tunnel lighting in Rep. of Korea. Power rates for tunnel lighting are known to account for the highest percentage in the tunnel maintenance costs. Therefore, tunnel lights are being replaced by LED that have advantages such as low power consumption and longevity. To analysis effect of replacement low pressure sodium lamp with LED, illumination and monthly power usage for a year are investigated for 8 tunnels. Power usage for tunnel lighting is decreased by 26.1% to 59.6%, and illumination is increased by 34.1% to 293% replacing low pressure sodium lamp with LED.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.23 no.5
• /
• pp.315-323
• /
• 2021

Tunnel is the most energy-consuming structure in road due to the characteristic of using artificial lighting during day and night. Therefore, tunnel lights are being replaced by LED lamp that have advantages with respect to low power consumption. The best use of social overhead capital can be expected by considering the life cycle cost, because to tunnel structures are accompanied by a series of medium-to-long-term and continuous processes of replacing auxiliary facilities. In this study, the saving effect by LCC analysis was quantitatively analyzed by replacing tunnel light sources from high-pressure sodium lamps to LED lamps. The effect of reducing the replacement cycle by increasing the life of the lamps and the resulting maintenance cost is very significant, on replacing tunnel lighting light sources with LED lamp.

• Journal of the Korean Vacuum Society
• /
• v.18 no.5
• /
• pp.352-357
• /
• 2009

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

• 한국가시화정보학회:학술대회논문집
• /
• 2004.11a
• /
• pp.1-4
• /
• 2004

The PIV measurements are performed to get the quantitative flow visualization around a road vehicle. The model scaled with 1/48 is located in the middle test section of the closed-loop water tunnel and the measuring system consists of CCD camera, diode laser, synchronizer, and computer. The experimental data are obtained at two Reynolds numbers of 50,000 and 100,000 based on the model length. The quasi-three-dimensional isovorticity surfaces, based on two-dimensional velocity field data, are generated. There is little difference between the results in part of the recirculation region and the vorticity contour according to the Reynolds number. Also a little bit complicated three dimensional flows are predicted behind the road vehicle.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.27-31
• /
• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• 전기의세계
• /
• v.22 no.2
• /
• pp.40-44
• /
• 1973

A method for obtaining state equation for nonlinear time-varying RLC networks is presented. The nonlinear time-varying RLC elements are decomposed by using Murata method to formulate nonlinear state equation. A nonlinear time-varying RLC network containing twin tunnel diode is solved as an example. In consequence of solving the examjple, simple methods are presented for revising the original network model so that the formulation of state equation is simplified.