• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.9-14
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• 2000

We report on the novel nonequilibrium nlicrowave emission from quasiparticle-injected high-Tc superconductors. The phenomena have been observed for the current-injected YBCO/I/Au or BSCCO/I/Au thin-film tunnel junctions and BSCCO single-crystal intrinsic Josephson mesa junction samples. For the thin-film tunnel junctions, the emitted radiation appears as broadband. For the intrinsic BSCCO mesa samples, the radiation appears as three different modes of emissions depending on the bias point in the hysteretic current-voltage characteristics; Josephson-emission, nonequilibrium broad emission and sharp coherent microwave emission. The results were interpreted by the Josephson plasma excitation model due to quasiparticle injection.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.137-137
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• 2004

• Progress in Superconductivity
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• v.11 no.2
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• pp.96-99
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• 2010

We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.27 no.7
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• pp.337-343
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• 2015

This paper investigates the ventilation characteristics in a two-dimensional underground network junction composed of four main lines interconnected by eight ramps. Simple one-dimensional models cannot be applied to network junctions since there are interferences of traffic piston effects in the main lines and at the ramps. A numerical algorithm was developed to analyze the pressure and airflow distributions iteratively. The Darcy-Weisbach equation was used to calculate the piston effects by traffic flows, and a Hardy Cross iteration was conducted for network analysis at the interconnected junction. The results show interesting ventilation characteristics and CO concentration distributions depending on system parameters such as vehicle speed, tunnel diameter, and other junction configurations.

• Wind and Structures
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• v.28 no.4
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• pp.203-213
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• 2019

The topography and geomorphology are complex and changeable in western China, so the railway transition section is common. To investigate the aerodynamic effect of the subgrade-tunnel transition section, including a cutting-tunnel transition section, an embankment-tunnel transition section and two typical scenarios for rail infrastructures, is selected as research objects. In this paper, models of standard cutting, embankment and CRH2 high-speed train with the scale of 1:20 were established in wind tunnel tests. The wind speed profiles above the railway and the aerodynamic forces of the vehicles at different positions along the railway were measured by using Cobra probe and dynamometric balance respectively. The test results show: The influence range of cutting-tunnel transition section is larger than that of the embankment-tunnel transition section, and the maximum impact height exceeds 320mm (corresponding to 6.4m in full scale). The wind speed profile at the railway junction is greatly affected by the tunnel. Under the condition of the double track, the side force coefficient on the leeward side is negative. For embankment-tunnel transition section, the lift force coefficient of the vehicle is positive which is unsafe for operation when the vehicle is at the railway line junction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Journal of Magnetics
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• v.6 no.4
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• pp.126-128
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• 2001

The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300$\^{C}$, reaching ∼46%. A TEM image reveals a structural change in the interface of A1$_2$O$_3$layer for the MTJ annealed by RTA at 300$\^{C}$. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the magnetoresistive properties of MTJs.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.136-137
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• 1999