• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 추계학술대회 논문집
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• pp.613-614
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• 2008

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.315-316
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• 2013

This paper presents a parameter tuning method of a LLC resonant converter for a wireless charging circuit. A switched-capacitor is used to change the resonant frequency of the resonant circuit. The simulation results verify that the efficiency of the power transfer can be improved by a duty control of the switched-capacitor for various values of the coupling coefficient.

• 전기학회논문지
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• 제58권1호
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• pp.137-146
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• 2009

We present a micromechanical digital-to-analog (DA) variable capacitor using a parallel digital actuator array, capable of accomplishing high-Q tuning. The present DA variable capacitor uses a parallel interconnection of digital actuators, thus achieving a low resistive structure. Based on the criteria for capacitance range ($0.348{\sim}1.932$ pF) and the actuation voltage (25 V), the present parallel DA variable capacitor is estimated to have a quality factor 2.0 times higher than the previous serial-parallel DA variable capacitor. In the experimental study, the parallel DA variable capacitor changes the total capacitance from 2.268 to 3.973 pF (0.5 GHz), 2.384 to 4.197 pF (1.0 GHz), and 2.773 to 4.826 pF (2.5 GHz), thus achieving tuning ratios of 75.2%, 76.1%, and 74.0%, respectively. The capacitance precisions are measured to be $6.16{\pm}4.24$ fF (0.5 GHz), $7.42{\pm}5.48$ fF (1.0 GHz), and $9.56{\pm}5.63$ fF (2.5 GHz). The parallel DA variable capacitor shows the total resistance of $2.97{\pm}0.29\;{\Omega}$ (0.5 GHz), $3.01{\pm}0.42\;{\Omega}$ (1.0 GHz), and $4.32{\pm}0.66\;{\Omega}$ (2.5 GHz), resulting in high quality factors which are measured to be $33.7{\pm}7.8$ (0.5 GHz), $18.5{\pm}4.9$ (1.0 GHz), and $4.3{\pm}1.4$ (2.5 GHz) for large capacitance values ($2.268{\sim}4.826$ pF). We experimentally verify the high-Q tuning capability of the present parallel DA variable capacitor, while achieving high-precision capacitance adjustments.

• 한국통신학회논문지
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• 제38A권12호
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• pp.991-997
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• 2013

본 논문에서는 아날로그필터를 위한 새로운 구조의 주파수 제어 방식(frequency tuning scheme)과 트랜스컨덕턴스(gm) 가변 범위가 넓은 트랜스컨덕터(OTA: Operational transconductor amplifier) 회로를 제안하였다. 제안된 주파수 제어 방식은 트랜스컨덕터와 커패시터로 구성된 1차 저역통과필터의 시정수와 커패시터에 일정 전압이 충전되는데 걸리는 시간과의 관계식을 이용한 것으로 전압제어필터 방식과 유사하게 간단한 구조를 가지며, 기준신호로 순수 정현파를 필요로 하지 않고, 시스템 클럭 또는 외부 수정 발진 회로를 통해 쉽게 얻을 수 있는 클럭 펄스를 사용할 수 있다는 장점이 있다. 또한, 클럭 주파수가 고정된 조건에서도 복잡한 구조의 커패시터 어레이를 사용하지 않고 다중 대역 지원을 목적으로 차단 주파수를 가변하면서 제어할 수 있다. 그리고 모의 실험을 통해 제안된 자동 주파수 제어회로의 동작을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.198-206
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• 2013

This paper presents a wide band, fine-resolution digitally controlled oscillator (DCO) with an on-chip 3-D solenoid inductor using the 0.13 ${\mu}m$ digital CMOS process. The on-chip solenoid inductor is vertically constructed by using Metal and Via layers with a horizontal scalability. Compared to a spiral inductor, it has the advantage of occupying a small area and this is due to its 3-D structure. To control the frequency of the DCO, active capacitor and active inductor are tuned digitally. To cover the wide tuning range, a three-step coarse tuning scheme is used. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. The DCO with solenoid inductor is fabricated in 0.13 ${\mu}m$ process and the die area of the solenoid inductor is 0.013 $mm^2$. The DCO tuning range is about 54 % at 4.1 GHz, and the power consumption is 6.6 mW from a 1.2 V supply voltage. An effective frequency resolution is 0.14 kHz. The measured phase noise of the DCO output at 5.195 GHz is -110.61 dBc/Hz at 1 MHz offset.

• Journal of Power Electronics
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• 제17권2호
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• pp.570-578
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• 2017

This paper proposes a method to stabilize the output voltage of the secondary side of an Inductive Power Transfer (IPT) system through tuning/detuning via a serial tuned DC Voltage-controlled Variable Capacitor (DVVC). The equivalent capacitance of the DVVC changes with the conduction period of a diode in the DVVC controlled by DC voltage. The output voltage of an IPT system can be made constant when this DVVC is used as a variable resonant capacitor combined with a PI controller generating DC control voltage according to the fluctuations of the output voltage. Since a passive diode instead of an active switch is used in the DVVC, there are no active switch driving problems such as a separate voltage source or gate drivers, which makes the DVVC especially advantageous when used at the secondary side of an IPT system. Moreover, since the equivalent capacitance of the DVVC can be controlled smoothly with a DC voltage and the passive diode generates less EMI than active switches, the DVVC has the potential to be used at much higher frequencies than traditional switch mode capacitors.

• ETRI Journal
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• 제38권5호
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• pp.879-884
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• 2016

In this paper, an ultra-small marker beacon antenna operated in the VHF-band is proposed. This antenna has a modified linear IFA structure with a lumped capacitor and a capacitive plate for frequency tuning and impedance matching. The capacitive plate is directly connected to the end of a linear radiator and is separated from the antenna ground by 1 mm. The main operating frequency is mainly controlled by the size and dielectric constant of the capacitive plate. The lumped capacitor is useful for fine frequency tuning. Using the proposed structure, an ultra-small marker beacon antenna can be realized with a length of 0.04 ${\lambda}_0$.

• ETRI Journal
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• 제27권2호
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• pp.239-242
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• 2005

This paper introduces two different current differencing buffered amplifier (CDBA)-based synthetic floating inductance circuits. Both configurations use a grounded capacitor. They are fully integrable and provide the advantages of electronic tuning.

• 전기학회논문지
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• 제57권6호
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• pp.938-943
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• 2008

Coupling capacitor voltage transformers(CCVTs) have been used in extra or ultra high voltage systems to obtain the standard low voltage signal for protection and measurement. For fast suppression of the phenomenon of ferroresonance, three winding CCVTs are used instead of two winding CCVTs. A tuning reactor is connected between a capacitor voltage divider and a voltage transformer to reduce the phase angle difference between the primary and secondary voltages in the steady state. Slight distortion of the secondary voltage is generated when no fault occurs. However, when a fault occurs, the secondary voltage of the CCVT has significant errors due to the transient components such as dc offset component and/or high frequency components resulting from the fault. This paper proposes an algorithm for compensating the secondary voltage of a three winding CCVT in the time domain. With the values of the measured secondary voltage of the three winding CCVT, the secondary, tertiary and primary currents and voltages are estimated; then the voltages across the capacitor and the tuning reactor are calculated and then added to the measured voltage. Test results indicate that the algorithm can successfully compensate the distorted secondary voltage of the three winding CCVT irrespective of the fault distance, the fault impedance and the fault inception angle as well as in the steady state.