• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.26-29
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• 2003

To discover electrical properties of individual single wall nanotube(SWNT), a number of SWNT-based tubeFETs have been fabricated. The device consists of a single semiconducting SWNT on an insulating substrate, contacted at each end by metal electrodes. It presents high transconductances, and charge storage phenomenon, which is the operations of injecting electrons from the nanotube channel of a tubeFET into charge traps on the surface of the $SiO_2$ gate dielectric, thus shifting the threshold voltage. This phenomenon can be repeated many times, and maintained for the hundreds of seconds at room temperature. We will report this phenomenon as the memory effects of the SWNT, and attempt to use this property for the memory device.

• 대한전자공학회논문지
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• 제9권4호
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• pp.1-6
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• 1972

본초광대역AMqus조기는 회로구성요소에 초광대역 AM변조작용을 제한하는 동조회로를 사용하지 않고 전송선의 임피단스변환성을 이용하여, 인가한 변조신호의 진폭에 비례되게 반송파의 진폭이 변하도록 하는 변조원리를 이용한 것이다. 본논문에서는 이 AM변조기를 해석연구 하였으며 또 본변조기의 Active 소자로서 VHF 진실관, FET, VVC 다이오우드를 각각 사용하여 실험하여 얻은 AM변조파형의 사진도 첨가하였다.

• 전자공학회논문지A
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• 제29A권2호
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• pp.18-23
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• 1992

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.707-711
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• 2013

Carbon nanotubes(CNT) has strength and chemical stability, greatly conductivity characteristics. In particular, MWCNT (multi-walled carbon nanotubes) show rapidly resistance sensitive for changes in the ambient gas, and therefore they are ideal materials to gas sensor. So, we fabricated NOx gas sensors structured MOS-FET using MWCNT (multi-walled carbon nanotubes) material. We investigate the change resistance of NOx gas sensors based on MOS-FET with ultra lean NOx gas concentrations absorption. And NOx gas sensors show sensitivity on the change of gate-source voltage ($V_{gs}=0[V]$ or $V_{gs}=3.5[V]$). The gas sensors show the increase of sensitivity with increasing the temperature (largest value at $40^{\circ}C$). On the other hand, the sensitivity of sensors decreased with increasing of NOx gas concentration. In addition, We obtained the adsorption energy($U_a$), $U_a$ = 0.06714[eV] at the NOx gas concentration of 8[ppm], $U_a$ = 0.06769[eV] at 16[ppm], $U_a$ = 0.06847[eV] at 24[ppm] and $U_a$ = 0.06842[eV] at 32[ppm], of NOx gas molecules concentration on the MWCNT gas sensors surface with using the Arrhenius plots. As a result, the saturation phenomena is occurred by NOx gas injection of concentration for 32[ppm].

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.257-261
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• 2014

Carbon nanotubes (CNT) has the excellent physical characteristics in the sensor, medicine, manufacturing and energy fields, and it has been studied in those fields for the several years. We fabricated the NOx gas sensors of MOS-FET type using the MWCNT. The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$ (gate-source voltage) with the ambient temperature. The gas sensor absorbed the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was reduced by the NOx gas molecules accumulated on the MWCNT surface. Furthermore, when the voltage ($V_{gs}$) was applied to the gas sensor, the term of the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the ambient temperature of $40^{\circ}C$. We also obtained the adsorption energy ($40^{\circ}C$) using the Arrhenius plots by the reduction of resistance due to the $V_{gs}$ voltage variations. As a result, we obtained that the adsorption energy also was increased with the increasement of the applied $V_{gs}$ voltages.

• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송공학회 1996년도 학술대회
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• pp.27-31
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• 1996

In this paper, The SSPA(Solid State Power Amplifier) is 100 watts amplifier which is used with C-Band Satellite communication Up-Link frequency, 5.875 ∼6.425 GHz. SSPA requires more output power than is available from a single GaAs FET with result it is necessary to combine the output of many device. To achieve a high power, it is important to make a good N-way power divider which has a small different phase, good combining efficiency and high power handling capability. The reliability of Power GaAs FET decrease with increasing junction temperature, power amplifier in general dissipate amount of power. It is important to provide them with a heatsink and a temperature compensation circuit to dispose of the unwanted heat. To compensate temperature, Using PIN diode attenuator, it is enable to get a precision gain control. The output power of the SSPA is more than 100 watt with which the TWTA (Traveling-Wave Tube Amplifier) can be replaced. Each stage was measured by the Network analyzer PH8510C, Power meter Booton 42BD, The gain is more than 53 dB, flatness is less than 1.5 dB.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.325-329
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• 2013

Carbon nanotubes(CNT) have excellent electrical, chemical stability and mechanical properties. These can be used in a variety of fields. MWCNT are extremely sensitive for minute changes in the ambient gas, namely, their sensing properties varies greatly with the absorption of gas such as NOx and $H_2$. We investigate the electrical properties of CNTs and make a NOx gas sensor based on Multi-walled carbon nanotubes (MWCNT) materials. We obtained the NOx gas sensor of MWCNT based on P-type Si wafer that has the resistivity of $1.667{\times}10^{-1}[{\Omega}{\cdot}cm]$. We knew that the sensitivity of sensor decreased with increasing of NOx gas concentration. And the sensitivity of sensor shows the largest value at $20^{\circ}C$. The sensitivity of sensor decrease with increasing the temperature. Also absorption energy of NOx gas molecule on the MWCNT surface decreases with increasing concentration of NOx gas.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.668-672
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• 2014

Carbon nanotubes(CNT) has chemical stability and great sensitivity characteristics. In particular, the gas sensor required characteristics such as rapid, selectivity and sensitivity sensor. Therefore, CNT are ideal materials to gas sensor. So, we fabricated the NOx gas sensors of MOS-FET type using the MWCNT (multi-walled carbon nanotube). The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$(gate-source voltage) and electrode changed electrode spacing=30, 60, 90[${\mu}m$]. The gas sensor absorbed with the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was increased by magnification of electrode spacing. Furthermore, when the voltage($V_{gs}$) was applied to the gas sensor, the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the electrode spacing $90[{\mu}m]$. We also obtained the adsorption energy($U_a$) using the Arrhenius plots by the reduction of resistance due to the voltage variations. As a result, we obtained that the adsorption energy was increased with the increment of the applied voltages.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(1)
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• pp.430-434
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• 2004

본 논문에서는 관전류 직접제어 방식을 채택한 3.2kW(80kV,40mA)급 최소형, 최경량 Portable X-선 장치를 제안한다 본 장치는 X-선 발생을 위한 고전압 발생 단에 모노탱크 블록 사용하였고, 고주파 고전압용 인버터에는 스위칭 전력소자로서 Mini block type의 MOS-FET를 채용, 80kHz로 스위칭 함으로서 고전압 변압기를 비롯한 고전압 발생부의 크기와 무게를 최소화하였다. X-ray Power의 출력이 높아짐에 따라, X-ray tube의 필라멘트 인버터의 출력용량 또한 증가되었다. 본 논문에서는 설정 관전류에 대한 정밀한 제어를 위하여 2단계 모드로 필라멘트 예열을 행하여 관전류 응답특성을 개선하였으며 제안한 휴대용 X-선 발생장치의 부하변동에 따른 X-선 관전압과 관전류의 개선된 특징을 실험파형을 통하여 입증하였다.

• 한국정보전자통신기술학회논문지
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• 제10권1호
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• pp.31-37
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• 2017

본 논문에서는 고출력 무전극 램프 시스템 개발에서 램프 내에 가스종류, 혼합비, 압력과 방전관 사이즈, 아말감종류 및 혼합비, 페라이트코어의 특성등의 최적화를 통한 램프 설계 부분을 연구하였다. 또한 구동방식에 따른 점등회로의 역율 및 효율개선, 파형이나 인가 주파수에 따른 특성 분석을 통한 점등회로설계 부분 등을 고려하였으며, 최종적으로 주변 환경을 고려 무전극 등기구 설계를 수행 하였다. 고출력 무전극 램프용 점등회로의 설계를 통한 특성분석을 진행하여 개선 보완을 통하여 효울을 향상 시켰으며 점등회로의 구동주파수에 따른 무전극 램프의 광학적 특성 및 시스템 영향을 확인한 결과, $7{\sim}10^{\circ}C$ 정도 낮은 특성의 135kHz로 구동하는 점등회로를 최적화하였다. 실험적으로 Peak Noise 발생으로 인한 FET(Q3,Q4) demage 현상을 개선하였다. 최종적으로 무전극램프용 점등회로 최종 설계도을 통해 약 2~3배 이상의 수명을 확보함으로써 안정기의 신뢰성 및 무전극 램프 시스템의 효율이 높음을 알 수 있었다.