• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.26-29
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• 2003

To discover electrical properties of individual single wall nanotube(SWNT), a number of SWNT-based tubeFETs have been fabricated. The device consists of a single semiconducting SWNT on an insulating substrate, contacted at each end by metal electrodes. It presents high transconductances, and charge storage phenomenon, which is the operations of injecting electrons from the nanotube channel of a tubeFET into charge traps on the surface of the $SiO_2$ gate dielectric, thus shifting the threshold voltage. This phenomenon can be repeated many times, and maintained for the hundreds of seconds at room temperature. We will report this phenomenon as the memory effects of the SWNT, and attempt to use this property for the memory device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.4
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• pp.1-6
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• 1972

A super widely amplitude modulating AM modulator system, utilizing the impedance trasformation characteristics of transmission line is presented. The analyses and oscillograms obtained from the AM modulator systems using VHF tube, FET or VVC diode as an active element are added to verify the principle of the system.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.18-23
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• 1992

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.707-711
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• 2013

Carbon nanotubes(CNT) has strength and chemical stability, greatly conductivity characteristics. In particular, MWCNT (multi-walled carbon nanotubes) show rapidly resistance sensitive for changes in the ambient gas, and therefore they are ideal materials to gas sensor. So, we fabricated NOx gas sensors structured MOS-FET using MWCNT (multi-walled carbon nanotubes) material. We investigate the change resistance of NOx gas sensors based on MOS-FET with ultra lean NOx gas concentrations absorption. And NOx gas sensors show sensitivity on the change of gate-source voltage ($V_{gs}=0[V]$ or $V_{gs}=3.5[V]$). The gas sensors show the increase of sensitivity with increasing the temperature (largest value at $40^{\circ}C$). On the other hand, the sensitivity of sensors decreased with increasing of NOx gas concentration. In addition, We obtained the adsorption energy($U_a$), $U_a$ = 0.06714[eV] at the NOx gas concentration of 8[ppm], $U_a$ = 0.06769[eV] at 16[ppm], $U_a$ = 0.06847[eV] at 24[ppm] and $U_a$ = 0.06842[eV] at 32[ppm], of NOx gas molecules concentration on the MWCNT gas sensors surface with using the Arrhenius plots. As a result, the saturation phenomena is occurred by NOx gas injection of concentration for 32[ppm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.257-261
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• 2014

Carbon nanotubes (CNT) has the excellent physical characteristics in the sensor, medicine, manufacturing and energy fields, and it has been studied in those fields for the several years. We fabricated the NOx gas sensors of MOS-FET type using the MWCNT. The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$ (gate-source voltage) with the ambient temperature. The gas sensor absorbed the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was reduced by the NOx gas molecules accumulated on the MWCNT surface. Furthermore, when the voltage ($V_{gs}$) was applied to the gas sensor, the term of the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the ambient temperature of $40^{\circ}C$. We also obtained the adsorption energy ($40^{\circ}C$) using the Arrhenius plots by the reduction of resistance due to the $V_{gs}$ voltage variations. As a result, we obtained that the adsorption energy also was increased with the increasement of the applied $V_{gs}$ voltages.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 1996.06a
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• pp.27-31
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• 1996

In this paper, The SSPA(Solid State Power Amplifier) is 100 watts amplifier which is used with C-Band Satellite communication Up-Link frequency, 5.875 ∼6.425 GHz. SSPA requires more output power than is available from a single GaAs FET with result it is necessary to combine the output of many device. To achieve a high power, it is important to make a good N-way power divider which has a small different phase, good combining efficiency and high power handling capability. The reliability of Power GaAs FET decrease with increasing junction temperature, power amplifier in general dissipate amount of power. It is important to provide them with a heatsink and a temperature compensation circuit to dispose of the unwanted heat. To compensate temperature, Using PIN diode attenuator, it is enable to get a precision gain control. The output power of the SSPA is more than 100 watt with which the TWTA (Traveling-Wave Tube Amplifier) can be replaced. Each stage was measured by the Network analyzer PH8510C, Power meter Booton 42BD, The gain is more than 53 dB, flatness is less than 1.5 dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.325-329
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• 2013

Carbon nanotubes(CNT) have excellent electrical, chemical stability and mechanical properties. These can be used in a variety of fields. MWCNT are extremely sensitive for minute changes in the ambient gas, namely, their sensing properties varies greatly with the absorption of gas such as NOx and $H_2$. We investigate the electrical properties of CNTs and make a NOx gas sensor based on Multi-walled carbon nanotubes (MWCNT) materials. We obtained the NOx gas sensor of MWCNT based on P-type Si wafer that has the resistivity of $1.667{\times}10^{-1}[{\Omega}{\cdot}cm]$. We knew that the sensitivity of sensor decreased with increasing of NOx gas concentration. And the sensitivity of sensor shows the largest value at $20^{\circ}C$. The sensitivity of sensor decrease with increasing the temperature. Also absorption energy of NOx gas molecule on the MWCNT surface decreases with increasing concentration of NOx gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.668-672
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• 2014

Carbon nanotubes(CNT) has chemical stability and great sensitivity characteristics. In particular, the gas sensor required characteristics such as rapid, selectivity and sensitivity sensor. Therefore, CNT are ideal materials to gas sensor. So, we fabricated the NOx gas sensors of MOS-FET type using the MWCNT (multi-walled carbon nanotube). The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$(gate-source voltage) and electrode changed electrode spacing=30, 60, 90[${\mu}m$]. The gas sensor absorbed with the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was increased by magnification of electrode spacing. Furthermore, when the voltage($V_{gs}$) was applied to the gas sensor, the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the electrode spacing $90[{\mu}m]$. We also obtained the adsorption energy($U_a$) using the Arrhenius plots by the reduction of resistance due to the voltage variations. As a result, we obtained that the adsorption energy was increased with the increment of the applied voltages.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.430-434
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• 2004

본 논문에서는 관전류 직접제어 방식을 채택한 3.2kW(80kV,40mA)급 최소형, 최경량 Portable X-선 장치를 제안한다 본 장치는 X-선 발생을 위한 고전압 발생 단에 모노탱크 블록 사용하였고, 고주파 고전압용 인버터에는 스위칭 전력소자로서 Mini block type의 MOS-FET를 채용, 80kHz로 스위칭 함으로서 고전압 변압기를 비롯한 고전압 발생부의 크기와 무게를 최소화하였다. X-ray Power의 출력이 높아짐에 따라, X-ray tube의 필라멘트 인버터의 출력용량 또한 증가되었다. 본 논문에서는 설정 관전류에 대한 정밀한 제어를 위하여 2단계 모드로 필라멘트 예열을 행하여 관전류 응답특성을 개선하였으며 제안한 휴대용 X-선 발생장치의 부하변동에 따른 X-선 관전압과 관전류의 개선된 특징을 실험파형을 통하여 입증하였다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.1
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• pp.31-37
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• 2017

In this paper, we implemented for the development of a high output induction lamp system, which lamp design is optimized by gas type, mixing ratio, pressure and discharge tube size, amalgam type and mixing ratio, and characteristics of ferrite core in the lamp. It's the circuit design by improving the power factor and efficiency according to the driving method, which has analyzing the characteristics according to the waveform and frequency. Finally, luminaries design part for applying the optimal lighting system considering the surrounding environment, the characteristics of the lighting circuit for electrodeless lamp has analyzed and the improvement has been proceeded. In conclusion, the driving frequency has optimized at 135kHz with degrading $7{\sim}10^{\circ}C$ based on the results of the optical characteristics of the induction lamp on peak noise FET(Q3,Q4) damage.