• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1266-1268
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• 2013

• Journal of the Korean Chemical Society
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• v.37 no.12
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• pp.995-1002
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• 1993

The thermal decomposition of trimethylaluminum (TMA) with ammonia has been investigated by in-situ Fourier transform infrared spectroscopy. The spectroscopic reaction cell, which permits heating interna lly up to 1100$^{\circ}C$, consists of stainless-steel hexagonal-port chamber containing two NaCl windows installed in parallel. In this work, the stoichiometric reaction between TMA and $NH_3$ is found to be completed immediately after mixing. FTIR spectra observed in the range of temperature 25∼1100$^{\circ}C$ show that TMA and TMA : $NH_3$ adduct decompose into methane as a predominant product around 500$^{\circ}C$. The assignments of the IR bands due to the gaseous TMA, $NH_3$ and TMA : $NH_3$ adduct are attempted on the basis of the published data. Furthermore, the decomposition of TMA can be described as a first-order reaction. Kinetic data about the decompositon of TMA and TMA : $NH_3$adduct will also be discussed.

• Bulletin of the Korean Chemical Society
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• v.17 no.4
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• pp.380-384
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• 1996

Lithium trimethylalkynylaluminates, prepared conveniently by reacting trimethylaluminum with lithium alkynide, readily react with aldehydes and ketones to give the corresponding propargyl alcohols in 70-95% yields. The reaction is highly chemoselective; thus many other functional groups such as amides, nitriles, epoxides and halogen compounds are inert under the reaction conditions. The reagents also show an excellent 1,2-regiospecificity in the reactions with cyclic or acyclic α,β-unsaturated carbonyl compounds.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.66-69
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• 2003

Various semiconductor nanowires such as GaN, GaP, InP, Si$_3$N$_4$, SiO$_2$/Si, and SiC were coated conformally with aluminum oxide (Al$_2$O$_3$) layers by atomic layer deposition (ALD) using trimethylaluminum (TMA) and distilled water ($H_2O$) at a temperature of 20$0^{\circ}C$. Transmission electron microscopy (TEM) revealed that A1203 cylindrical shells conformally coat the semiconductor nanowires. This study suggests that the ALD of $Al_2$O$_3$ on nanowires is a promising method for preparing cylindrical dielectric shells for coaxially gated nanowire field-effect transistors.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.1-6
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• 2003

Aluminum oxide ($Al_2O_3$) nanotubes and nanorods were fabricated by coating and filling of multiwalled carbon nanotubes (MWNTs) with atomic-layer deposition (ALD). $Al_2O_3$ material was deposited on the MWNTs at a substrate temperature of $300^{\circ}C$ using trimethylaluminum and distilled water. Transmission electron microscopy, high resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and selected area electron diffraction of the deposited MWNTs revealed that amorphous $Al_2O_3$ material coats the MWNTs conformally and that this material fills the inside of the MWNTs. These illustrate that ALD has an excellent capability to coat and fill any three-dimensional shapes of MWNTs conformally without producing any crystallites.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.15-18
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• 2003

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.34-40
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• 1993

새로운 단결정 박막 성장방법으로 최근에 많은 관심을 끌고 있는 초고진공 화학기상증착법(Ultra-High Vacuum Chemical Vapor Deposition)을 이용하여 AlGaAs에 에피탁시 박막을 성장시켰다. AlGaAs 에피탁시층의 성장은 2。 경사진 GaAs(100) 기판을 사용하였다. 반응 기체로는 Trimethylgallium(TMGa), Trimethylaluminum(TMAl)과 arsine을 사용하였고, 성장온도는 $580~700^{\circ}C$, 기체 압력은 10-5~10-4Torr를 유지하였다. 특히 본 연구에서는 arsine을 사전에 열분해 하는 통상의 Chemical Beam Epitaxy(CBE) 성장법과는 달리, arsine이 표면에서 분해되는 화학 반응만을 사용하여도 AlGaAs 에피탁시를 성장할 수 있음은 물론 박막내의 탄소 불순물의 농도가 크게 낮아짐을 관찰하였다. 또한 성장 온도의 변화에 따른 AlGaAs 에피탁시층의 Al 함유 과정에 대하여도 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.256-256
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• 2011

We have deposited Al2O3 thin films on Si substrates at room temperature by UV-enhanced atomic layer deposition using trimethylaluminum (TMA) and H2O as precursors with UV light. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In many cases, the surface reactions of the atomic layer deposition are not completed at low temperature. In this experiment, the surface reactions were found to be self-limiting and complementary enough to yield uniform Al2O3 thin films by using UV irradiation at room temperature. The UV light was very effective to obtain the high quality Al2O3 thin films with defectless.

• Archives of Pharmacal Research
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• v.17 no.3
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• pp.204-206
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• 1994

A regioselective perparation of 10-methoxy-11-hydroxyaporphine ("Apocodeine, 1b") form (R, S)-10, 11-dihydroxyaporphine(apomorphine, 1a) is described. The isopropylidene ketal ring of 10, 11-(isopropylidenyldioxy) aporphine (2) obtained by the isopropylidenation of apomorphine, was regioselectively opened by the ten equivalent of timethylaluminum to give 100-hydroxy-11-t-butyloxyaporphine (3). The free 10-hydroxyl position of 3 was methylated with methyl p-toluenesulfonate/NaH, and afforded 10-methoxy-11-t-butyloxyaporphine (4) in high yield. Selective debutylation gave the desired 10-methoxy-11-hydroxyaporphine("apocodeine", 1b) in good yield.